2SK2239,PDF,2SK2239 PDF资料,Datasheet,下载2SK2239技术资料

Bulletin No

T03EA0

(Oct., 1999)

SANKEN

MOSFET

●Nch M OS FET

●Pch M OS FET

CAUTION / WARNING

•

The information in this publication has been carefully checked and is believed to be

accurate; however, no responsibility is assumed for inaccuracies.

Sanken reserves the right to make changes without further notice to any products herein

in the interest of improvements in the performance, reliability, or manufacturability of its

products. Before placing an order, Sanken advises its customers to obtain the latest

version of the relevant information to verify that the information being relied upon is

current.

•

Application and operation examples described in this catalog are quoted for the sole

purpose of reference for the use of the products herein and Sanken can assume no

responsibility for any infringement of industrial property rights, intellectual property rights

or any other rights of Sanken or any third party which may result from its use.

When using the products herein, the applicability and suitability of such products for the

intended purpose or object shall be reviewed at the users responsibility.

Although Sanken undertakes to enhance the quality and reliability of its products, the

occurrence of failure and defect of semiconductor products at a certain rate is inevitable.

Users of Sanken products are requested to take, at their own risk, preventative measures

including safety design of the equipment or systems against any possible injury, death,

fires or damages to the society due to device failure or malfunction.

•

Sanken products listed in this catalog are designed and intended for the use as

components in general purpose electronic equipment or apparatus (home appliances,

office equipment, telecommunication equipment, measuring equipment, etc.).

Before placing an order, the user’s written consent to the specifications is requested.

When considering the use of Sanken products in the applications where higher reliability

is required (transportation equipment and its control systems, traffic signal control

systems or equipment, fire/crime alarm systems, various safety devices, etc.), please

contact your nearest Sanken sales representative to discuss and obtain written

confirmation of your specifications.

•

The use of Sanken products without the written consent of Sanken in the applications

where extremely high reliability is required (aerospace equipment, nuclear power control

systems, life support systems, etc.) is strictly prohibited.

•

Anti radioactive ray design is not considered for the products listed herein.

This publication shall not be reproduced in whole or in part without prior written approval

from Sanken.

Standard Minimum Packaged Quantity

Specify the number of standard minimum

packaged units when placing order.

Series

FM20

Standard Minimum package Unit

100

105

FM100

Contents

Storage, characteristic inspection, and handling precautions ..

External dimensions .................................................

Avalanche energy capability ......................................

Avalanche energy capability measuring method ............

Product index by part number ....................................

Selection guide ........................................................

2

3

4

5

6

7

2SK1177 .........................................

2SK1178 .........................................

8

9

Nch

2SK1179 ........................................ 10

2SK1180 ........................................ 11

2SK1181 ........................................ 12

2SK1183 ........................................ 13

2SK1184 ........................................ 14

2SK1185 ........................................ 15

2SK1186 ........................................ 16

2SK1187 ........................................ 17

2SK1188 ........................................ 18

2SK1189 ........................................ 19

2SK1190 ........................................ 20

2SK1191 ........................................ 21

2SK1192 ........................................ 22

2SK1712 ........................................ 23

2SK2207 ........................................ 24

2SK2208 ........................................ 25

2SK2419 ........................................ 26

2SK2420 ........................................ 27

2SK2421 ........................................ 28

2SK2701 ........................................ 29

2SK2702 ........................................ 30

2SK2703 ........................................ 31

2SK2704 ........................................ 32

2SK2705 ........................................ 33

2SK2706 ........................................ 34

2SK2707 ........................................ 35

2SK2708 ........................................ 36

2SK2709 ........................................ 37

2SK2710 ........................................ 38

2SK2778 ........................................ 39

2SK2779 ........................................ 40

2SK2803 ........................................ 41

2SK2804 ........................................ 42

2SK2805 ........................................ 43

2SK2848 ........................................ 44

2SJ424........................................... 45

2SJ425........................................... 46

Pch

Discontinued part guide

........................................... 48

1

Storage, characteristic inspection, and handling precautions

Inappropriate storage, characteristic inspection, or

5. Soldering temperature

handling may impair the reliability of the device. To ensure

high reliability, observe the following precautions:

If soldering is necessary, take care to keep the applica-

tion of heat as brief as possible, and within the following

limits:

1. Storage precautions

260±5ºC for 10 s max

It is recommended to store the device at room temper-

•

350ºC for 3 s max (soldering iron)

ature (between 5 and 35°C) and relative humidity at 40 to

75%. Avoid storing the device in a place where the

temperature or humidity is high or changes greatly.

6. Heatsink

Store the device in a clean place that is not exposed to

A large contact area between the device and the

heatsink for effective heat radiation is required. To ensure

a large contact area, minimize mounting holes and select a

heatsink with a sufficiently smooth surface and that is free

from burring or metal debris.

•

direct sunlight, and is free from corrosive or harmful

gases.

If the device is stored for a long time, check the solder-

•

ability and lead condition before using the device.

2. Precautions on characteristic inspections

7. Handling precautions to protect power

MOS FET from static damage

When carrying out characteristic inspections on re-

ceiving products or other occasions, take care to avoid

applying a surge voltage from the measuring equipment

and check the terminals of the measuring equipment for a

short circuit or wiring errors. Measure the device within the

range of its rated values.

When handling the device, physical grounding is neces-

•

sary. Wear a wrist strap with a 1 MΩ resistor close to the

body in the wrist strap to prevent electric shock.

Use a conductive table mat or floor mat at the device

•

handling workbench and to ensure grounding.

When using a curve tracer or other measuring equip-

•

ment, ground the equipment as well.

3. Silicone Grease

When soldering, ground the bit of the soldering iron and

•

When attaching heatsink, apply a small amount of

silicone evenly to the back of the device and both sides of

the insulator to reduce the thermal resistance between the

device and heatsink.

the dip tank to prevent a leakage voltage from damaging

the device.

Store the device in the shipping container or a conduc-

•

tive container or use aluminum foil to protect the device

from static electricity.

Recommended silicone grease

G746

SHINETSU SILICONE CO., LTD.

•

YG6260 TOSHIBA SILICONE CO., LTD.

8. Load on Leads

SC102 DOW CORNING TORAY SILICONE CO., LTD.

When excessive load is exerted on leads, internal

connections may be break. Load exerted in each of the

following directions should be limited to below 1 kg for

TO-220F and 2.5 kg for TO-3PF.

Please select a silicone grease carefully since the oil in

some grease can penetrate the product, which will

result in an extremely short product life.

4. Screw tightening torque

If screws are not tightened with sufficient torque, this

can increase the thermal resistance and reduce the

radiation effect. Tightening screws with too great a torque

damage the screw thread, deform the heatsink, or twist the

device frame until it is damaged. There, tighten screws with

a torque as shown below (Table 1).

Table 1: Screw Tightening Torque

Directions in which load is exerted on leads

Package

TO-220F

TO-3PF

Tightening Torque

9. Lead Forming

0.490 to 0.686 N•m (5 to 7 kgf•cm)

0.686 to 0.822 N•m (7 to 9 kgf•cm)

We make several types of lead forming available, please

consult with our personnel when necessary.

2

External dimensions (Unit: mm)

1 FM20 (TO-220F)

UL approved product

General product

10.0 ^±0.2

4.2 ^±0.2

2.8

10.0^±0.2

4.2^±0.2

2.8

±0.2

3.3 ^±0.2

3.3

C0.5

a

b

a

b

1.35 ^±0.15

0.85⁺^–0⁰^.^.¹²

1.35^±0.15

+0.2

–0.1

0.85

+0.2

–0.1

+0.2

0.45

–0.1

2.54

2.54 0.45

2.4^±0.2

2.54

2.4^±0.2

2.2 ^±0.2

G

D

S

G

D S

a: Part Number

b: Lot Number

Weight: Approx 2.0g

2

FM100 (TO-3PF)

UL approved product

General product

5.5^±0.2

3.3^±0.1

5.5 ^±0.2

15.6^±0.2

3.3^±0.2

15.6^±0.2

3.45^±0.2

a

b

1.75 ^±0.15

0.8

1.75^±0.15

2.15 ^±0.15

2.15^±0.15

+0.2

–0.1

1.05

–0.1

1.05

+0.2

–0.1

0.65

+0.2

–0.1

5.45^±0.1

3.35^±0.2

5.45^±0.1

5.45^±0.10.65

3.35 ^±0.2

5.45^±0.1

1.5 4.4 1.5

G

D

S

G

D

S

a: Part Number

b: Lot Number

Weight: Approx 6.5g

3

Sanken MOS FETs feature guaranteed

avalanche energy capability.

Avalanche energy capability of MOS FET

1. What is avalanche energy capability ?

3. Temperature derating for E_AS

When a MOS FET is used for high-speed switching, the

inductive load and wiring inductance may cause a counter

electromotive voltage at cutoff that the device cannot

withstand.

The EAS Value in the specifications is guaranteed when

the channel temperature Tch is 25ºC. Since the EAS Value

drops as the channel temperature rises, derating

depending on the temperature is necessary.

Avalanche energy capability is the non-clamped ability

to withstand damage expressed as energy. As long as the

energy applied to the device at cutoff is within the

guaranteed avalanche energy capability, the device will not

be damaged even if the Drain-Source voltage exceeds the

capability.

Fig.B shows the derating curve for single avalanche

energy capability. This is the derating curve of EAS and the

channel temperature (Tch (start)) immediately before the

avalanche occurs in the product, with the EAS value

(maximum rating) at 25ºC as 100%.

For example, if the product temperature is 50ºC, the EAS

value is derated to 64% of the value at 25ºC.

For example, a Drain-Source voltage that is within the

guaranteed capability when electrically stationary may

exceed the limit at startup or cutoff. Usually, a snubber

circuit or similar surge absorbing circuit is used to keep the

Drain-Source voltage within the guaranteed capability.

Sanken MOS FETs, however, do not require this kind of

protective circuit because the avalanche energy capability

is guaranteed. Sanken MOS FETs enable the number of

parts to be reduced, saving board area.

Fig. B

E_AS— Tch (start)

I_Lp= I_Dmax

100

80

60

40

* Consult the engineering department of Sanken when

planning to use MOS FETs in avalanche mode.

20

0

2. E_AScalculation method

If the current in an inductive load L is I_LPat the moment

when the MOS FET is cut off, E_AScan be expressed as

follows:

25

50

75

100

125

150

Tch (start) (ºC)

V_DSS

V_DSS– V_DD

1

2

...........................

2

E_AS

=

•L • I_Lp•

1

4. Continuous avalanche energy capability

* V_DD: Supply voltage

If the value of L is not known in an actual circuit, E_AS

can also be calculated from the actual voltage and current

This section explains the derating method for continu-

ous avalanche.

waveforms as follows:

Considering continuous avalanche as the repetition of a

single avalanche, the safe operating area (SOA) is deter-

mined using the derating curve shown in Fig. B.

Calculate the energy and Tch (start) of avalanche in the

worst condition and determine SOA using the calculated

data and the derating curve shown in Fig.B. The tempera-

ture rise due to avalanche should not cause the channel

temperature to exceed the maximum rating.

............................................................

2

E_AS= Ps •t

* Ps: Surge power * t: Surge time

The following calculation is used to determine E_AS

where the voltage and current shown in Fig.A are applied

to the MOS FET in a circuit.

Integrate the overlapping section of I_Dand V_DSto calcu-

late I_D•V_DS•dt. When the I_Dwaveform is triangular, E_AS

∫

will be as follows:

The following is an example of determining SOA judg-

ment by calculation when a MOS FET enters a transient

avalanche state at power-on then changes to a stationary

state.

1

2

E_AS

=

•10(A) • 550(V) • 10(µs) = 27.5(mJ)

Fig. A

10A

Supposing that the waveform is as shown in Fig.C until

the MOS FET changes to the stationary state, calculate the

start loss and switching (turn-on/off) Ioss. To simplify the

calculation, the average loss Pa and the last two wave-

forms are used for approximation. (Fig. D)

I_D

0

550V

(V_DSS

First, calculate the channel temperature Tch ( ) at time

)

(

) where the temperature condition is severest.

V_DS

If the Tch ( ) value is within the maximum rating, there

0

is no problem as far as the temperature is concerned.

10µs

4

Tch ( ) = Ta + Pa •

+ (P₁–Pa) •

r

ch-c (Tn +T+t₁+ t₂+ t₃)

Tch ( ₁) = Ta + Pa •

+ (P₁–Pa) •

r

ch-c (Tn +T' +t₁+ t₂+ t₃)

ch-c (T+t₁+ t₂+ t₃)

rch-c (T' +t₁+ t₂+ t₃)

– (P₁– P₂) •

rch-c (T+t₂+ t₃)

– (P₁– P₂) •

rch-c (T '+t₂+ t₃)

+ (P₃– P₂) •

rch-c (T+t₃)

+ (P₃– P₂) • rch-c (T' +t₃)

– P₃•

r

ch-c (T) +P₄•

r

ch-c (t₄+ t₅+ t₆)

– P₃•

r

ch-c (T') +P₄•

r

ch-c (t₄+ t₅+ t₆)

ch-c (t₅+ t₆)

......................................

– (P₄– P₅) •

rch-c (t₅+ t₆)

ch-c (t₆)

– (P₄– P₅) •

r

......................................

+ (P₆– P₅) •

r

+ (P₆– P₅) •

ch-c (t₆)

3

4

Ta

: Ambient temperature

*

This Tch ( ₁) value becomes Tch (start). If the avalanche

energy (E^AS= P ₆•t₆) is within the value derated from the

guaranteed EAS value at the temperature, there is no

problem as far as the avalanche energy is concerned.

rch-c (t): Transient thermal resistance at pulse width t

Then calculate the channel temperature Tch ( ₁) imme-

diately before avalanche.

Transient Stationary

Fig. C

Fig. D

P₆

P₃

P₁

P₄

PP₂

P₅

Pa

V_DS

0

I_D

T(n)

t₁t₂

t

t₃

t₄t₅t₆

T

T'

0

T(n)

1

Avalanche in this section

Avalanche energy capability measuring method

Fig. 1

V_{(BR) DSS}

V_{(BR) DSS}– V_DD

1

2

E_AS

=

• L • I_Lp

•

L

V_{(BR) DSS}

I_L

V_DS

I_Lp

I_L

R_G

V_DS

V_DD

V_GS

0V

V_DD

(b) Output waveform

(a) Measuring circuit

Switching time measuring method

Fig. 2

Nch

(a) Measuring circuit

(b) Input-output waveform

R_L

90%

V_GS

I_D

V_DS

10%

90%

V_DD

V_GS

0V

R_G

V_DS

10%

t_d(on)

t_d(off)

t_f

t_r

=

P.W. 10µs

Duty cycle 1%

t_on

t_off

Fig. 3

Pch

R_L

10%

V_GS

I_D

V_DS

90%

10%

V_DD

0V

R_G

V_DS

V_GS

90%

t_d(on)

t_d(off)

t_f

t_r

=

P.W. 10µs

Duty cycle <1%

t_on

t_off

5

Product index by part number

Absolute maximum ratings

Electrical Characteristics (Ta=25ºC)

Parameter

P_D

(Tc=25ºC)

R_DS(ON)max

(V_GS=10V)

Ciss

(typ)

V_DSS

I_D

E_AS

Package

Page

Part Number

(V)

500

200

100

60

(A)

2.5

(W)

30

35

85

25

30

25

30

35

25

30

35

40

90

30

35

75

35

40

35

75

40

75

85

35

40

85

30

35

30

35

80

30

25

30

(mJ)

200

260

400

500

660

36

(Ω)

(pF)

350

3.0

FM20

FM100

FM20

FM100

FM20

FM100

FM20

FM100

FM20

FM100

FM20

FM100

FM20

FM100

FM20

8

9

2SK1177

4

1.5

610

2SK1178

2SK1179

2SK1180

2SK1181

2SK1183

2SK1184

2SK1185

2SK1186

2SK1187

2SK1188

2SK1189

2SK1190

2SK1191

2SK1192

2SK1712

2SK2207

2SK2208

2SK2419

2SK2420

2SK2421

2SK2701

2SK2702

2SK2703

2SK2704

2SK2705

2SK2706

2SK2707

2SK2708

2SK2709

2SK2710

2SK2778

2SK2779

2SK2803

2SK2804

2SK2805

2SK2848

2SJ424

8.5

0.85

0.6

1300

1800

2700

140

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

37

38

39

40

41

42

43

44

45

46

10

13

3

0.4

1.5

5

67

0.8

260

5

16

0.54

0.27

0.16

0.2

180

9

32

350

12

10

15

22

30

40

15

3

58

650

2.1

6.2

17

300

60

0.1

640

60

0.05

0.028

0.1

1300

2500

820

60

38

60

6.2

900

60

280

400

17

5.0

630

5

3.0

1000

1300

2200

2400

720

22

30

40

7

0.037

0.028

0.02

1.1

*

60

38

60

450

600

100

450

600

–60

130

300

400

700

50

10

13

18

0.8

1000

1300

2500

560

0.8

0.57

0.3

4.5

1.85

1.1

7

150

300

400

70

950

8.5

0.85

0.55

0.175

0.08

2.8

1200

1900

740

12

20

3

200

30

1630

340

5

90

1.5

580

15

2

550

10

0.38

3.8

2100

290

5

—

0.5

270

*

8

0.28

580

2SJ425

: Under development

*

: UL recognized parts are available (File No. 117753). Each UL recognized parts is marked with a I , following its product number.

6

Selection Guide

Nch MOS FET

Pch MOS FET

V

I

R

V

I

R

DS(ON)

DSS

D

DS(ON)

DSS

D

Part Number

Package Page

Part Number

Package Page

(V)

(A)

(Ω) max

(V)

(A)

(Ω) max

60

10

0.2

FM20

FM100

FM20

FM100

FM20

FM100

FM20

FM100

FM20

FM100

FM20

FM100

18

19

23

20

26

21

27

22

28

15

16

17

39

40

13

14

41

42

29

30

31

32

33

43

34

8

–60

5

0.5

FM20

45

46

2SK1188

2SK1189

2SK1712

2SK1190

2SK2419

2SK1191

2SK2420

2SK1192

2SK2421

2SK1185

2SK1186

2SK1187

2SK2778

2SK2779

2SK1183

2SK1184

2SK2803

2SK2804

2SK2701

2SK2702

2SK2703

2SK2704

2SK2705

2SK2805

2SK2706

2SK1177

2SK1178

2SK1179

2SK1180

2SK1181

2SK2848

2SK2707

2SK2708

2SK2709

2SK2710

2SK2207

2SK2208

2SJ424

2SJ425

15

22

30

40

5

0.1

8

0.28

*

50mΩ

37mΩ

28mΩ

20mΩ

0.54

0.27

0.16

0.175

80mΩ

1.5

100

9

12

20

3

*

200

450

5

0.8

3

2.8

5

1.5

7

1.1

10

13

15

18

0.8

0.57

0.38

0.3

500

600

900

2.5

3

4

1.5

9

8.5

0.85

0.6

10

11

12

44

35

36

37

38

24

25

10

13

2

0.4

3.8

4.5

1.85

1.1

7

8.5

0.85

0.55

5

12

3

5

3

: Logic drive

*

7

2SK1177

External dimensions

1......FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

500

max

V_DSS

V_GSS

I_D

500

±20

V

V_{(BR) DSS}

I_GSS

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

±500

250

4.0

±2.5

A

I_DSS

V_DS= 500V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 1.4A

V_GS= 10V, I_D= 1.4A

I_{D (pulse)}

P_D

±10 (Tch 150ºC)

30 (Tc = 25ºC)

200

A

V_TH

2.0

1.5

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

2.3

2.6

350

54

S

E_AS

3.0

Ω

*

Tch

150

pF

ns

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I_D= 1.4A, V_DD= 250V,

V_GS= 10V,

See Figure 2 on Page 5.

: V_DD= 50V, L = 60mH, I_L= 2.5A, unclamped,

See Figure 1 on Page 5.

50

*

t_off

140

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

3.0

2.0

1.0

0

5

4

3

2

=

V_DS10V

=

V_GS10V

10V

2.0

5.5V

1.0

5V

V_GS4.5V

=

–

T_C

55ºC

1

0

25ºC

125ºC

=

0

10

20

0

2

4

6

8

10

0

1.0

2.0

3.0

150

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

10

5

10

8

6

=

V_DS10V

=

I_D1.5A

=

5

4

3

2

V_GS10V

=

I_D2.5A

=

–

T_C

55ºC

25ºC

6

125ºC

4

=

I_D1.5A

1

2

0

1

0

0.5

0.3

0.05 0.1

0.5

1

5

2

5

10

20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

1000

500

3.0

2.0

20

10

5

=

V_GS0V

I_D(pulse) max

30

=

f

1MHz

Ciss

R

LIMITED

I_Dmax

20

10

0

100

50

1

Coss

=

V_GS0V

0.5

1.0

0

5V,10V

0.1

10

5

Crss

40

Without heatsink

0.03

0

10

20

30

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

3

5

10

50 100

V_DS(V)

500 1000

V_DS(V)

V_SD(V)

8

2SK1178

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

500

max

V_DSS

V_GSS

I_D

500

±20

V

V_{(BR) DSS}

I_GSS

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

±500

250

4.0

±4.0

A

I_DSS

V_DS= 500V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 2.0A

V_GS= 10V, I_D= 2.0A

I_{D (pulse)}

P_D

±16 (Tch 150ºC)

35 (Tc = 25ºC)

260

A

V_TH

2.0

2.4

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

3.7

1.3

610

91

S

E_AS

1.5

Ω

*

Tch

150

pF

ns

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I_D= 2.0A, V_DD= 250V,

V

See Figure 2 on Page 5.

: V_DD= 50V, L = 28mH, I_L= 4.0A, unclamped,

See Figure 1 on Page 5.

50

*

_GS= 10V,

t_off

120

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

5

4

3

2

2.0

1.5

=

V_DS10V

=

V_GS10V

4

10V

6V

5.5V

3

1.0

0.5

0

2

5V

=

–

T_C

55ºC

1

0

25ºC

125ºC

=

V_GS4.5V

0

10

20

0

2

4

6

8

10

0

1

2

3

4

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

10

5

10

8

5

=

V_DS10V

=

I_D2A

V_GS10V

=

–

T_C

55ºC

25ºC

4

3

2

125ºC

=

I_D4A

6

4

1

=

I_D2A

2

0

1

0

0.5

0.3

0.05 0.1

0.5

I_D(A)

1

5

2

5

10

20

150

–50

0

50

100

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

I_D(pulse) max

Ta — P_DCharacteristics

(Tc=25ºC)

3000

5

4

3

50

40

=

V_GS0V

=

f

1MHz

1000

500

10

5

Ciss

30

20

10

0

I_Dmax

1

100

50

2

1

0

Coss

=

V_GS0V

0.5

5V,10V

Crss

40

0.1

Without heatsink

10

0.05

0

10

20

30

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

150

3

5

10

50 100

V_DS(V)

500 1000

V_DS(V)

V_SD(V)

9

2SK1179

External dimensions

2 ...... FM100

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

500

max

V_DSS

V_GSS

I_D

500

±20

V

V_{(BR) DSS}

I_GSS

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

±500

250

4.0

±8.5

A

I_DSS

V_DS= 500V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 4.5A

V_GS= 10V, I_D= 4.5A

I_{D (pulse)}

P_D

±34 (Tch 150ºC)

85 (Tc = 25ºC)

400

A

V_TH

2.0

5.1

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

7.7

0.70

1300

180

60

S

E_AS

0.85

Ω

*

Tch

150

pF

ns

V_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I_D= 4.5A, V_DD= 250V,

V_GS= 10V,

See Figure 2 on Page 5.

: V_DD= 50V, L = 10mH, I_L= 8.5A, unclamped,

See Figure 1 on Page 5.

*

t_off

110

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

10

8

1.5

=

V_DS10V

=

V_GS10V

10V

8

5.5V

1.0

0.5

0

6

4

5V

=

–

T_C

55ºC

2

25ºC

125ºC

=

V_GS4.5V

0

5

10

15

20

0

2

4

6

8

10

0

1

2

3

4

5

6

7

8

9

10

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

20

10

8

2.0

1.5

1.0

=

V_DS10V

=

I_D4.5A

V_GS10V

=

–

T_C

55ºC

25ºC

=

125ºC

=

I_D8.5A

5

6

4

=

I_D4.5A

1

0.5

0

2

0

0.5

0.3

0.05 0.1

0.5

1

5

10

2

5

10

20

150

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

5000

10

50

90

=

V_GS0V

I_D(pulse) max

I_Dmax

80

70

60

50

40

30

20

10

0

=

f

1MHz

8

6

Ciss

10

5

1000

500

1

4

2

0

Coss

Crss

=

V_GS0V

0.5

100

50

5V,10V

0.1

Without heatsink

20

0.03

0

10

20

30

40

50

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_SD(V)

0

50

100

Ta (ºC)

150

3

5

10

50 100

V_DS(V)

500 1000

V_DS(V)

10

2SK1180

External dimensions

2 ...... FM100

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

500

max

V_DSS

V_GSS

I_D

500

±20

V

V_{(BR) DSS}

I_GSS

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

±500

250

4.0

±10

A

I_DSS

V_DS= 500V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 5.0A

V_GS= 10V, I_D= 5.0A

I_{D (pulse)}

P_D

±40 (Tch 150ºC)

85 (Tc = 25ºC)

500

A

V_TH

2.0

6.1

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

9.2

0.5

S

E_AS

0.6

Ω

*

Tch

150

1800

250

60

pF

ns

V_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I

V

_D= 5A, V_DD= 250V,

_GS= 10V,

See Figure 2 on Page 5.

: V_DD= 50V, L = 9mH, I_L= 10A, unclamped,

See Figure 1 on Page 5.

*

t_off

140

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

10

1.0

0.8

0.6

10

8

=

V_GS10V

=

10V

V_DS10V

8

5V

6

4

6

0.4

0.2

0

4

2

0

4.5V

=

–

T_C

55ºC

2

25ºC

125ºC

=

V_GS4V

0

5

10

15

20

0

2

4

6

8

10

0

1

2

3

4

5

6

7

8

9

10

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

20

10

8

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

=

V_DS10V

=

I_D5A

V_GS10V

=

–

T_C

55ºC

25ºC

=

125ºC

5

6

=

I_D10A

4

1

=

I_D5A

2

0

0.5

0.3

150

0.05 0.1

0.5

1

5

10

2

5

10

20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

5000

10

8

70

90

I_D(pulse) max

=

V_GS0V

1

80

70

60

50

40

30

20

10

0

=

0

f

1MHz

0

Ciss

µ

1ms (1shot)

s

R^DS

^(ONL⁾IMITED

I_Dmax

10

5

1000

500

6

D

C

O

P

E

R

A

T

Coss

4

IO

=

V_GS0V

N

1

5V,10V

0.5

100

2

0

Crss

40

50

30

Without heatsink

0.1

0

10

20

30

50

0

0.5

1.0

1.5

5

10

50 100

V_DS(V)

500 1000

0

50

100

Ta (ºC)

150

V_DS(V)

V_SD(V)

11

2SK1181

External dimensions

2 ...... FM100

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

500

max

V_DSS

V_GSS

I_D

500

±20

V

V_{(BR) DSS}

I_GSS

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

±500

250

4.0

±13

A

I_DSS

V_DS= 500V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 6.5A

V_GS= 10V, I_D= 6.5A

I_{D (pulse)}

P_D

±52 (Tch 150ºC)

85 (Tc = 25ºC)

660

A

V_TH

2.0

8.5

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

13

0.35

2700

350

65

S

E_AS

0.4

Ω

*

Tch

150

pF

ns

V_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I

V

_D= 6.5A, V_DD= 250V,

_GS= 10V,

See Figure 2 on Page 5.

: V = 50V, L = 7mH, I = 13A, unclamped,

DD

L

*

See Figure 1 on Page 5.

t_off

180

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

0.5

0.4

0.3

14

12

10

8

12

10

8

=

V_GS10V

=

V_DS10V

10V

5V

6

0.2

0.1

4

=

–

T_C

55ºC

4.5V

2

0

2

25ºC

125ºC

=

V_GS4V

0

5

10

15

20

0

2

4

6

8

10

0

2

4

6

8

10

12

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

20

10

8

1.0

0.8

0.6

0.4

=

V_DS10V

=

I_D6.5A

=

–

T_C

55ºC

25ºC

V_GS10V

125ºC

5

6

=

I_D13A

4

2

0

1

=

I_D8.5A

0.2

0

0.5

0.3

150

0.05 0.1

0.5

1

5

10 20

2

5

10

20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

10000

5000

14

100

50

90

=

I_D_D(pulse) max

V_GS0V

80

70

60

50

40

30

20

10

0

=

f

1MHz

12

10

Ciss

I_Dmax

10

5

1000

500

8

6

4

2

0

=

V_GS0V

Coss

1

5V,10V

0.5

100

50

Crss

40

Without heatsink

0.1

0

10

20

30

50

0

0.5

1.0

1.5

1

5

10

50 100

V_DS(V)

500 1000

0

50

100

Ta (ºC)

150

V_DS(V)

V_SD(V)

12

2SK1183

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

200

max

V_DSS

V_GSS

I_D

200

V

V_{(BR) DSS}

I_GSS

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

±20

±3

±500

250

4.0

A

I_DSS

V_DS= 200V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 1.5A

V_GS= 10V, I_D= 1.5A

I_{D (pulse)}

P_D

±12 (Tch 150ºC)

25 (Tc = 25ºC)

30

A

V_TH

2.0

0.8

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

1.2

140

42

S

E_AS

1.5

Ω

*

Tch

150

pF

ns

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I

V

_D= 1.5A, V_DD= 100V,

_GS= 10V,

See Figure 2 on Page 5.

: V = 50V, L = 6mH, I = 3.0A, unclamped,

DD

L

35

*

See Figure 1 on Page 5.

t_off

50

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

3.0

2.0

3.0

2.0

=

V_DS10V

10V

=

V_GS10V

6V

1.0

5.5V

5V

1.0

0

1.0

0

=

–

T_C

55ºC

25ºC

125ºC

=

V_GS4.5V

0

2

4

6

8

10

0

2

4

6

8

10

0

1.0

2.0

3.0

150

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

10

5

4

3

8

6

=

V_DS10V

=

I_D1.5A

=

V_GS10V

=

–

T_C

55ºC

25ºC

=

I_D3A

4

2

1

0

125ºC

1

=

I_D1.5A

2

0

0.5

0.3

0.05 0.1

0.5

I_D(A)

1

5

10

20

–50

0

50

100

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

500

3.0

2.0

20

10

5

25

20

I_D(pulse) max

=

V_GS0V

=

f

1MHz

Ciss

100

50

I_Dmax

1

Coss

0.5

10

0

1.0

0

10

10V

0.1

Crss

40

Without heatsink

5

3

=

V_GS0V

0.05

0.03

5V

0

10

20

30

50

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_SD(V)

3

5

10

50 100

V_DS(V)

500

0

50

100

Ta (ºC)

V_DS(V)

13

2SK1184

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

200

max

V_DSS

V_GSS

I_D

200

V

V_{(BR) DSS}

I_GSS

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

±20

±5

±500

250

4.0

A

I_DSS

V_DS= 200V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 2.5A

V_GS= 10V, I_D= 2.5A

I_{D (pulse)}

P_D

A

V_TH

2.0

1.3

±20 (Tch 150ºC)

30 (Tc = 25ºC)

67

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

2.5

0.5

260

100

50

S

E_AS

0.8

Ω

*

Tch

150

pF

ns

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I

V

_D= 2.5A, V_DD= 100V,

_GS= 10V,

See Figure 2 on Page 5.

: V_DD= 50V, L = 4mH, I_L= 5.0A, unclamped,

See Figure 1 on Page 5.

*

t_off

60

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

5

4

3

1.0

0.8

0.6

10V

=

V_GS10V

=

V_DS10V

4

3

6V

2

0.4

0.2

0

2

1

0

5.5V

=

–

T_C

55ºC

1

5V

25ºC

125ºC

=

V_GS4.5V

0

2

4

6

8

10

0

2

4

6

8

10

0

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

I_D(A)

V_DS(V)

V_GS(V)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

10

5

8

6

2.0

1.0

0

=

V_DS10V

=

I_D2.5A

V_GS10V

=

–

T_C

55ºC

25ºC

125ºC

4

=

I_D5A

1

2

0

=

I_D2.5A

0.5

0.3

150

0.05 0.1

0.5

1

5

10

5

10

20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

1000

500

5

4

50

30

20

=

V_GS0V

I_D(pulse) max

=

f

1MHz

Ciss

10

5

I_Dmax

3

2

1

0

100

50

Coss

1

0.5

10

0

10V

Crss

40

0.1

10

5

Without heatsink

=

V_GS0V

5V

0.05

0.03

0

10

20

30

50

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_SD(V)

3

5

10

50 100

V_DS(V)

500

0

50

100

Ta (ºC)

150

V_DS(V)

14

2SK1185

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

100

max

V_DSS

V_GSS

I_D

100

V

V_{(BR) DSS}

I_GSS

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

±20

±5

±500

250

4.0

A

I_DSS

V_DS= 100V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 2.5A

V_GS= 10V, I_D= 2.5A

I_{D (pulse)}

P_D

±20 (Tch 150ºC)

25 (Tc = 25ºC)

16

A

V_TH

2.0

1.5

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

1.7

0.41

180

82

S

E_AS

0.54

Ω

*

Tch

150

pF

ns

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I

V

_D= 2.5A, V_DD= 50V,

_GS= 10V,

See Figure 2 on Page 5.

: V_DD= 25V, L = 1mH, I_L= 5.0A, unclamped,

See Figure 1 on Page 5.

40

*

t_off

40

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

5

1.0

0.8

0.6

0.4

0.2

0

5

4

3

=

V_DS10V

=

V_GS10V

10V

4

6.5V

3

6V

2

1

0

5.5V

=

–

T_C

55ºC

1

5V

25ºC

125ºC

=

V_GS4.5V

0

2

4

6

8

10

0

2

4

6

8

10

0

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

I_D(A)

V_DS(V)

V_GS(V)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

10

5

1.2

1.0

0.8

0.6

0.4

=

V_DS10V

=

I_D2.5A

V_GS10V

6

=

–

T_C

55ºC

25ºC

125ºC

4

2

0

=

I_D5A

1

=

I_D2.5A

0.2

0

0.5

0.3

150

0.05 0.1

0.5

1

5

10

5

10

20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

50

25

1000

500

5

4

3

=

V_GS0V

I_D(pulse) max

=

f

1MHz

20

10

0

10

5

Ciss

I_Dmax

100

50

Coss

2

1

10V

0.5

Crss

40

=

V_GS0V

10

5

Without heatsink

5V

0.1

0

10

20

30

50

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_SD(V)

0

50

100

Ta (ºC)

150

0.5

1

5

10

50 100

V_DS(V)

15

2SK1186

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

100

max

V_DSS

V_GSS

I_D

100

V

V_{(BR) DSS}

I_GSS

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

±20

±9

±500

250

4.0

A

I_DSS

V_DS= 100V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 4.5A

V_GS= 10V, I_D= 4.5A

I_{D (pulse)}

P_D

A

V_TH

2.0

2.4

±36 (Tch 150ºC)

30 (Tc = 25ºC)

32

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

3.7

0.24

350

130

60

S

E_AS

0.27

Ω

*

Tch

150

pF

ns

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I

V

_D= 4.5A, V_DD= 50V,

_GS= 10V,

See Figure 2 on Page 5.

: V_DD= 25V, L = 600µH, I_L= 9.0A, unclamped,

See Figure 1 on Page 5.

*

t_off

40

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

10

8

0.4

0.3

10

=

V_GS10V

V_DS10V

10V

8

6.5V

6

0.2

0.1

0

6V

4

2

0

4

5.5V

25ºC

125ºC

2

5V

=

–

T_C

55ºC

10

=

V_GS4.5V

0

2

4

6

8

10

0

2

4

6

8

0

1

2

3

4

5

6

7

8

9

10

150

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

10

5

6

4

2

0

0.5

0.4

0.3

0.2

0.1

0

=

V_DS10V

=

I_D4.5A

V_GS10V

=

–

T_C

55ºC

25ºC

=

125ºC

=

I_D9A

1

=

I_D4.5A

0.5

0.3

0.05 0.1

0.5

1

5

10

5

10

20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

1000

500

10

8

50

30

20

=

V_GS0V

1MHz

I_D_D(pulse) max

I_Dmax

=

f

Ciss

10

5

Coss

6

100

50

4

2

0

1

10

0

Crss

10V

0.5

=

V_GS0V

5V

Without heatsink

0.1

10

0

10

20

30

40

50

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_SD(V)

0.5

1

5

10

50 100

0

50

100

Ta (ºC)

V_DS(V)

16

2SK1187

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

100

max

V_DSS

V_GSS

I_D

100

±20

V

V_{(BR) DSS}

I_GSS

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

±500

250

4.0

±12

A

I_DSS

V_DS= 100V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 6.0A

V_GS= 10V, I_D= 6.0A

I_{D (pulse)}

P_D

A

V_TH

2.0

4.4

±48 (Tch 150ºC)

35 (Tc = 25ºC)

58

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

6.5

0.12

650

240

70

S

E_AS

0.16

Ω

*

Tch

150

pF

ns

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I

_D= 6A, V_DD= 50V,

: V_DD= 25V, L = 600µH, I_L= 12A, unclamped,

See Figure 1 on Page 5.

*

V_GS= 10V,

See Figure 2 on Page 5.

t_off

55

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

12

0.2

=

V_DS10V

10V

12

=

V_GS10V

10

8

5.5V

6

0.1

6

4

5V

4

25ºC

125ºC

4.5V

2

0

2

0

=

–

T_C

55ºC

=

V_GS4V

0

2

4

6

8

10

0

2

4

6

8

10

0

2

4

6

8

10

12

V_DS(V)

V_GS(V)

I_D(A)

I_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

20

10

5

6

4

0.4

0.3

0.2

0.1

0

=

V_DS10V

=

I_D6A

V_GS10V

=

–

T_C

55ºC

25ºC

=

125ºC

2

0

=

I_D12A

1

=

I_D6A

0.5

0.3

150

0.05 0.1

0.5

1

5

10 20

5

10

20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

12

10

8

3000

50

35

30

I_D(pulse) max

=

V_GS0V

=

f

1MHz

I_Dmax

1000

500

Ciss

10

5

20

10

0

6

Coss

Crss

1

4

2

10V

100

50

0.5

=

V_GS0V

5V

Without heatsink

0

0.1

0.5

20

0

10

20

30

40

50

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_SD(V)

0

50

100

Ta (ºC)

150

1

5

10

50 100

V_DS(V)

17

2SK1188

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

60

max

V_DSS

V_GSS

I_D

60

±20

V

V_{(BR) DSS}

I_GSS

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

±500

250

4.0

±10

A

I_DSS

V_DS= 60V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 5.0A

V_GS= 10V, I_D= 5.0A

±40 (Tch 150ºC)

25 (Tc = 25ºC)

2.1

I_{D (pulse)}

P_D

A

V_TH

2.0

2.2

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

3.3

0.15

300

160

35

S

E_AS

0.2

Ω

*

Tch

150

pF

ns

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I

_D= 5A, V_DD= 30V,

_GS= 10V,

See Figure 2 on Page 5.

: V_DD= 25V, L = 50µH, I_L= 7.0A, unclamped,

See Figure 1 on Page 5.

*

V

t_off

35

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

10

8

0.3

0.2

0.1

0

10

=

V_DS10V

=

V_GS10V

10V

7V

8

6V

6

4

25ºC

125ºC

5V

2

=

–

T_C

55ºC

10

=

V_GS4V

0

1

0

2

3

4

5

0

2

4

6

8

0

1

2

3

4

5

6

7

8

9

10

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

10

5

0.4

0.3

0.2

0.1

0

=

V_DS10V

=

I_D5A

=

6

4

V_GS10V

=

–

T_C

55ºC

25ºC

125ºC

1

2

0

=

I_D10A

0.5

0.3

=

I_D5A

150

0.05 0.1

0.5

1

5

10

5

10

20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

50

25

1000

500

10

8

=

V_GS0V

I_D(pulse) max

I_Dmax

=

f

1MHz

20

10

0

Ciss

10

5

Coss

6

100

50

4

10V

1

Crss

0.5

=

V_GS0V

2

5V

Without heatsink

0.1

10

0

10

20

30

40

50

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_SD(V)

0

50

100

Ta (ºC)

150

0.5

1

5

10

50 100

V_DS(V)

18

2SK1189

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

60

max

V_DSS

V_GSS

I_D

60

±20

V

V_{(BR) DSS}

I_GSS

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

±500

250

4.0

±15

A

I_DSS

V_DS= 60V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 8.0A

V_GS= 10V, I_D= 8.0A

I_{D (pulse)}

P_D

A

V_TH

2.0

4.2

±60 (Tch 150ºC)

30 (Tc = 25ºC)

6.2

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

6.2

0.07

640

350

110

45

S

E_AS

0.1

Ω

*

Tch

150

pF

ns

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I_D= 8A, V_DD= 30V,

V_GS= 10V,

See Figure 2 on Page 5.

: V_DD= 25V, L = 50µH, I_L= 12A, unclamped,

See Figure 1 on Page 5.

*

t_off

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

0.10

0.08

0.06

0.04

0.02

0

16

14

12

10

=

V_DS10V

=

V_GS10V

10V

14

7V

12

6V

10

8

6

4

2

0

5.5V

6

25ºC

125ºC

4

=

V_GS5V

=

–

T_C

55ºC

10

2

0

1

2

3

4

5

0

2

4

6

8

0

2

4

6

8

10

12

14

16

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

20

10

5

0.14

0.12

0.10

0.08

0.06

0.04

0.02

0

=

V_DS10V

=

I_D8A

V_GS10V

=

–

T_C

55ºC

25ºC

3

2

=

125ºC

=

I_D15A

1

0

=

I_D8A

0.5

0.3

150

0.05 0.1

0.5

1

5

10 20

5

10

20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

3000

100

50

30

I_D(pulse) max

=

V_GS0V

14

12

10

=

f

1MHz

1000

500

Ciss

I_Dmax

20

10

5

Coss

8

6

4

2

10V

100

50

10

0

5V

1

Crss

40

=

V_GS0V

Without heatsink

0.5

0.3

0

20

0

10

20

30

50

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_SD(V)

0

50

100

Ta (ºC)

150

0.5

1

5

10

50 100

V_DS(V)

19

2SK1190

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

60

max

V_DSS

V_GSS

I_D

60

±20

V

V_{(BR) DSS}

I_GSS

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

±500

250

4.0

±22

A

I_DSS

V_DS= 60V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 12A

V_GS= 10V, I_D= 12A

I_{D (pulse)}

P_D

±88 (Tch 150ºC)

35 (Tc = 25ºC)

17

A

V_TH

2.0

7.3

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

11

0.04

1300

650

130

60

S

E_AS

0.05

Ω

*

Tch

150

pF

ns

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I

_D= 12A, V_DD= 30V,

_GS= 10V,

See Figure 2 on Page 5.

: V_DD= 25V, L = 50µH, I_L= 20A, unclamped,

See Figure 1 on Page 5.

*

V

t_off

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

24

20

24

50

40

30

20

10

0

=

V_DS10V

=

V_GS10V

5.5V

10V

20

5V

10

0

10

25ºC

125ºC

=

V_GS4.5V

=

–

T_C

55ºC

0

1

2

3

4

5

0

2

4

6

8

10

0

10

20

24

150

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

50

80

60

40

20

0

=

V_DS10V

=

I_D12A

=

4

3

=

–

T_C

55ºC

25ºC

V_GS10V

125ºC

10

5

2

1

0

1

=

I_D22A

0.5

0.3

0.05 0.1

=

I_D12A

0.5

1

5

10

50

3

5

10

V_GS(V)

20

–50

0

50

100

I_D(A)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

5000

24

20

100

50

35

I_D(pulse) max

=

V_GS0V

=

f

1MHz

30

20

10

0

I_Dmax

Ciss

1000

500

10

5

Coss

Crss

10V

5V

10

0

=

V_GS0V

100

50

1

Without heatsink

0.5

0

10

20

30

40

50

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_SD(V)

0

50

100

Ta (ºC)

1

5

10

50 100

V_DS(V)

20

2SK1191

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Conditions

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

min

60

max

V

60

V

nA

µA

V

I = 250µA, V = 0V

D GS

DSS

GSS

(BR) DSS

±20

±30

I

±500

250

4.0

V

= ±20V

GSS

DSS

GS

DS

GS

I

A

= 60V, V = 0V

D

GS

I

A

V

TH

2.0

13

= 10V, I = 250µA

±120 (Tch 150ºC)

40 (Tc = 25ºC)

38

D (pulse)

D

P

D

W

mJ

ºC

Re

20

0.021

2500

1200

180

S

= 10V, I = 15A

D

(yfs)

E

AS

R

0.028

Ω

= 10V, I = 15A

DS (on)

D

*

Tch

150

Ciss

pF

ns

V

= 25V, f = 1.0MHz,

= 0V

DS

GS

Tstg

–55 to +150

Coss

I

= 15A, V = 30V,

DD

: V = 25V, L = 50µH, I = 30A, unclamped,

D

DD

L

t

on

off

*

See Figure 1 on Page 5.

V

= 10V,

GS

120

See Figure 2 on Page 5.

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

30

20

30

20

10

0

40

30

=

V_DS10V

10V

=

V_GS10V

5.5V

5V

20

10

0

10

0

=

–

T_C

55ºC

=

V_GS4.5V

25ºC

125ºC

6

0

1

2

3

4

5

0

2

4

8

10

0

10

20

30

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

50

2

40

30

20

10

0

=

V_DS10V

=

I_D15A

=

–

T_C

55ºC

25ºC

=

V_GS10V

125ºC

10

5

1

0

=

I_D30A

1

=

I_D15A

0.5

0.3

0.05 0.1

0.5

1

5

10

50

5

10

20

150

–50

0

50

Tc (ºC)

100

I_D(A)

V_GS(V)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

10000

5000

30

20

200

100

40

I_D(pulse) max

=

V_GS0V

=

f

1MHz

50

30

20

10

0

I_Dmax

Ciss

10V

Coss

1000

500

10

5

5V

10

0

Crss

40

=

V_GS0V

1

Without heatsink

100

0.5

0

10

20

30

50

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_SD(V)

0

50

100

Ta (ºC)

150

0.5

1

5

10

50 100

V_DS(V)

21

2SK1192

External dimensions

2 ...... FM100

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

60

max

V_DSS

V_GSS

I_D

60

V

V_{(BR) DSS}

I_GSS

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

±20

±40

±500

250

4.0

A

I_DSS

V_DS= 60V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 20A

V_GS= 10V, I_D= 20A

I_{D (pulse)}

P_D

±160 (Tch 150ºC)

90 (Tc = 25ºC)

38

A

V_TH

2.0

13

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

20

0.021

2500

1200

260

S

E_AS

0.028

Ω

*

Tch

150

pF

ns

V_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I_D= 20A, V_DD= 30V,

V_GS= 10V,

See Figure 2 on Page 5.

: V_DD= 25V, L = 50µH, I_L= 30A, unclamped,

See Figure 1 on Page 5.

*

t_off

120

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

40

30

40

35

30

25

20

10V

35

=

V_DS10V

=

V_GS10V

30

25

6V

20

10

0

15

10

5

5.5V

10

=

–

T_C

55ºC

=

V_GS5V

25ºC

125ºC

5

0

1

2

3

4

5

0

2

4

6

8

10

0

10

20

30

40

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

50

2

40

30

20

10

0

=

V_DS10V

=

I_D20A

=

–

T_C

55ºC

25ºC

=

V_GS10V

125ºC

10

5

1

0

=

I_D40A

1

=

I_D20A

0.5

0.3

150

0.05 0.1

0.5

1

5

10

50

5

10

20

–50

0

50

Tc (ºC)

100

I_D(A)

V_GS(V)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

10000

5000

40

35

30

25

20

200

100

50

90

=

V_GS0V

I_D(pulse) max

80

70

60

50

40

=

f

1MHz

I_Dmax

Ciss

10V

Coss

1000

500

10

5

15

10

5

30

20

5V

Crss

40

=

V_GS0V

10

0

Without heatsink

1

0

100

0

10

20

30

50

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_SD(V)

0

50

100

Ta (ºC)

150

0.5

1

5

10

50 100

V_DS(V)

22

2SK1712

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Conditions

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

min

60

max

V

60

±10

V

nA

µA

V

I = 250µA, V = 0V

D GS

DSS

GSS

(BR) DSS

I

±500

250

2.0

V

= ±10V

GSS

DSS

GS

DS

GS

I

±15

A

= 60V, V = 0V

D

GS

I

A

V

TH

1.0

5.6

= 10V, I = 250µA

±60 (Tch 150ºC)

30 (Tc = 25ºC)

6.2

D (pulse)

D

P

D

W

mJ

ºC

Re

8.4

S

= 10V, I = 8.0A

D

(yfs)

E

AS

0.12

0.07

820

360

100

75

0.14

0.1

Ω

= 4V,

I = 8.0A

D

*

R

DS (on)

Tch

150

Ω

= 10V, I = 8.0A

D

Tstg

–55 to +150

Ciss

pF

ns

V

= 25V, f = 1.0MHz,

= 0V

DS

GS

: V = 25V, L = 50µH, I = 12A, unclamped,

DD

L

Coss

*

See Figure 1 on Page 5.

I

= 8A, V = 30V,

DD

D

t

on

off

V

= 10V,

GS

See Figure 2 on Page 5.

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

16

0.14

0.12

=

V_DS10V

4V

5V 4.5V

14

12

10

14

12

10

0.10

0.08

4V

3.5V

8

6

4

2

0

8

6

4

2

0

=

V_GS10V

0.06

0.04

=

–

T_C

55ºC

25ºC

125ºC

=

V_GS3V

0.02

0

1

2

3

4

5

0

2

4

6

8

10

12

14

16

0

1

2

3

4

5

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

20

2

0.17

0.15

0.13

0.11

0.09

0.07

0.05

0.03

=

V_DS10V

=

I_D8A

=

–

T_C

55ºC

25ºC

10

5

125ºC

4V

15A

1

0

1

=

V_GS10V

=

I_D8A

0.5

0.2

150

–50

0

50

100

0.03 0.1

0.5

1

5

10 20

2

5

10

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

3000

100

50

30

I_D(pulse) max

=

V_GS0V

14

12

10

=

f

1MHz

1000

500

Ciss

I_Dmax

20

10

5

10V

4V

8

6

4

2

0

Coss

10

0

100

Crss

40

1

=

V_GS0V

50

30

Without heatsink

0.5

0.3

0

10

20

30

50

0

50

100

Ta (ºC)

150

0.5

1

5

10

50 100

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_SD(V)

V_DS(V)

23

2SK2207

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

900

max

V_DSS

V_GSS

I_D

900

V

V_{(BR) DSS}

I_GSS

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

±30

±100

100

4.0

±3

A

I_DSS

V_DS= 900V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 1.5A

V_GS= 10V, I_D= 1.5A

1

I_{D (pulse)}

±12

35 (Tc = 25ºC)

280

A

V_TH

2.0

1.0

3.0

2.0

3.8

630

120

52

*

P_D

E_AS

W

mJ

A

Re _(yfs)

R_{DS (on)}

Ciss

S

2

5.0

Ω

*

I_AS

3

pF

ns

V

_DS= 10V, f = 1.0MHz,

Tch

Tstg

150

ºC

Coss

Crss

t_on

V_GS= 0V

–55 to +150

I_D= 1.5A, V_DD250V,

R_L= 167Ω, V_GS= 10V,

See Figure 2 on Page 5.

1: P_W100µs, duty cycle 1%

2: V_DD= 50V, L = 60mH, I_L= 3A, unclamped, R_G= 50Ω,

See Figure 1 on Page 5.

55

*

t_off

165

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

3

2

1

0

6

5

4

3

2

1

0

=

V_DS20V

=

6V

V_GS10V

=

V_GS10V

5.5V

5V

2

1

0

=

–

T_C

55ºC

4.5V

4V

25ºC

125ºC

0

10

20

0

2

4

6

8

10

0

1

2

3

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

5

3

20

15

12

10

8

=

V_DS20V

=

I_D1.5A

=

–

T_C

55ºC

25ºC

V_GS10V

125ºC

=

I_D3A

6

10

1

=

4

I_D1.5A

0.5

5

0

2

0

0.2

0.05 0.1

150

0.5

I_D(A)

1

5

3

5

10

V_GS(V)

20

–50

0

50

100

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

5000

3

2

50

35

=

V_GS0V

=

f

1MHz

I_D(pulse) max

I_Dmax

30

20

10

0

10

5

1000

500

Ciss

1

=

V_GS0V

150

100

50

0.5

•

150

1

0

Coss

Crss

•

2

mm

A Fin

5V,10V

0.1

Without heatsink

10

0.03

0

10

20

30

40

50

0

0.2

0.4

0.6

0.8

1.0

0

50

100

Ta (ºC)

150

3

5

10

50 100

V_DS(V)

500 1000

V_DS(V)

V_SD(V)

24

2SK2208

External dimensions

2 ...... FM100

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Conditions

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

min

900

max

V

900

V

nA

µA

V

I = 100µA, V = 0V

D GS

DSS

GSS

(BR) DSS

±30

I

±100

100

4.0

V

GS

V

DS

V

DS

V

DS

V

GS

= ±30V

GSS

DSS

I

±5

A

= 900V, V = 0V

GS

D

1

I

±20

75 (Tc = 25ºC)

400

A

V

TH

2.0

3.0

= 10V, I = 1mA

D

D (pulse)

*

P

D

W

mJ

A

Re

S

= 20V, I = 2.5A

D

(yfs)

2

E

R

2.5

3.0

Ω

= 10V, I = 2.5A

AS

DS (on)

D

*

I

5

Ciss

1000

190

90

pF

ns

V

= 10V, f = 1.0MHz,

= 0V

DS

Tch

150

ºC

Coss

Crss

GS

Tstg

–55 to +150

I

= 2.5A, V

250V,

1: P

100µs, duty cycle 1%

D

DD

W

t

60

on

off

*

2: V = 50V, L = 30mH, I = 5A, unclamped, R = 50Ω,

R = 100Ω, V = 10V,

DD

L

G

L

GS

*

155

See Figure 1 on Page 5.

See Figure 2 on Page 5.

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

4

3

2

1

0

5

4

3

2

1

0

6V

=

V_GS10V

=

V_DS20V

=

V_GS10V

4

3

2

1

0

5.5V

5V

=

–

T_C

55ºC

4.5V

4V

25ºC

125ºC

0

5

10

15

20

0

2

4

6

8

10

0

1

2

3

4

5

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

20

5

3

10

8

=

–

T_C

55ºC

25ºC

=

I_D2.5A

=

V_GS10V

125ºC

15

10

5

=

I_D5A

6

4

2

0

1

=

I_D2.5A

0.5

0.3

0

–50

0

50

100

150

5

10

20

0.05 0.1

0.5

I_D(A)

1

5

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

50

5000

5

4

3

2

1

0

75

=

V_GS0V

70

60

50

40

30

20

10

0

I_D(pulse) max

=

f

1MHz

10

5

Ciss

1000

500

I_Dmax

=

V_GS0V

1

Coss

Crss

5V,10V

0.5

100

50

0.1

Without heatsink

0.03

10

0

0.2

0.4

0.6

0.8

1.0

0

10

20

30

40

50

3

5

10

50 100

V_DS(V)

500 1000

0

50

100

150

V_DS(V)

V_SD(V)

Ta (ºC)

25

2SK2419

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

60

max

V_DSS

V_GSS

I_D

60

±20

V

V_{(BR) DSS}

I_GSS

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±20V

±100

100

4.0

±22

A

I_DSS

V_DS= 60V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 12A

V_GS= 10V, I_D= 12A

I_{D (pulse)}

±88

A

V_TH

2.0

*

P_D

30 (Tc = 25ºC)

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

S

E_AS

37

mΩ

pF

ns

Tch

150

1300

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

: P_W100µs, duty cycle 1%

I_D= 12A, V_DD30V,

V

*

_GS= 10V

t_off

26

2SK2420

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Conditions

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

min

60

max

V

60

±20

V

nA

µA

V

I = 100µA, V = 0V

D GS

DSS

GSS

(BR) DSS

I

±100

100

4.0

V

= ±20V

GSS

DSS

GS

DS

GS

I

±30

A

= 60V, V = 0V

GS

D

1

I

±120

A

V

TH

2.0

13

= 10V, I = 250µA

D

D (pulse)

*

P

D

40 (Tc = 25ºC)

38

W

mJ

ºC

Re

20

21

S

= 10V, I = 15A

D

(yfs)

2

E

AS

R

DS (on)

28

mΩ

pF

ns

= 10V, I = 15A

D

*

Tch

150

Ciss

2200

850

210

145

V

= 25V, f = 1.0MHz,

= 0V

DS

GS

Tstg

–55 to +150

Coss

I

= 15A, V

30V,

1: P

100µs, duty cycle 1%

D

DD

W

t

on

off

*

2: V = 50V, L = 50µH, I = 30A, unclamped, R = 50Ω,

R = 2Ω, V = 10V,

See Figure 2 on Page 5.

DD

L

G

L

GS

*

See Figure 1 on Page 5.

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

30

20

10

0

40

10V

=

V_GS10V

=

V_DS10V

5.5V

6V

30

20

10

0

20

10

5V

=

–

T_C

55ºC

25ºC

125ºC

4.5V

=

V_GS4V

0

1

2

3

4

5

0

1

2

3

4

5

6

0

10

20

30

150

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

1.5

1.0

0.5

0

40

30

20

10

0

40

=

V_DS10V

=

I_D15A

=

V_GS10V

10

5

=

–

T_C

55ºC

=

I_D30A

25ºC

125ºC

1

=

I_D15A

0.5

0.3

0.1

0.5

1

5

10

30

5

10

20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

6000

30

20

200

100

50

40

I_D(pulse) max

=

V_GS0V

f

=

1MHz

Ciss

30

20

10

0

10V

I_Dmax

1000

500

5V

10

5

Coss

Crss

=

V_GS0V

10

0

1

Without heatsink

0.5

0.3

100

0

10

20

30

40

50

0

0.5

V_SD(V)

1.0

1.2

0

50

100

Ta (ºC)

0.5

1

5

10

50 100

V_DS(V)

27

2SK2421

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

60

max

V_DSS

V_GSS

I_D

60

±20

V

V_{(BR) DSS}

I_GSS

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±20V

±100

100

4.0

±40

A

I_DSS

V_DS= 60V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 10V, I_D= 20A

V_GS= 10V, I_D= 20A

1

I_{D (pulse)}

±160

A

V_TH

2.0

18

*

P_D

E_AS

40 (Tc = 25ºC)

60

W

mJ

A

Re _(yfs)

R_{DS (on)}

Ciss

25

17.5

2400

950

S

2

20

mΩ

pF

ns

*

I_AS

40

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tch

Tstg

150

ºC

Coss

t_on

I_D= 20A, V_DD30V,

R_L= 1.5Ω, V_GS= 10V,

See Figure 2 on Page 5.

–55 to +150

400

1: P_W100µs, duty cycle 1%

2: V_DD= 20V, L = 50µH, I_L= 40A, unclamped, R_G= 50Ω,

See Figure 1 on Page 5.

t_off

195

*

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

40

30

20

10

0

40

30

20

10

0

10V

=

V_DS10V

5.5V

=

V_GS10V

5V

30

20

=

V_GS4.5V

=

–

T_C

55ºC

25ºC

125ºC

10

0

1

2

3

4

5

0

2

4

6

0

10

20

30

40

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

50

2

40

30

20

10

0

=

V_DS10V

=

I_D20A

V_GS10V

=

10

5

1

0

=

–

T_C

55ºC

25ºC

=

I_D40A

125ºC

=

I_D20A

1

0.5

150

0.1

0.5

1

5

10

50

4

5

10

20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Ta — P_DCharacteristics

7000

5000

40

30

20

10

0

40

=

V_GS0V

=

f

1MHz

Ciss

30

20

10

0

10V

5V

1000

500

Coss

Crss

=

V_GS0V

Without heatsink

100

0

10

20

30

40

50

0

0.5

V_SD(V)

1.0 1.2

0

50

100

Ta (ºC)

150

V_DS(V)

28

2SK2701

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

450

max

V_{(BR) DSS}

I_GSS

I_DSS

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

V_DSS

V_GSS

I_D

450

V

±100

100

4.0

±30

V_DS= 450V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 3.5A

±7

A

V_TH

2.0

3.5

3.0

5

1

I_{D (pulse)}

±28

35 (Tc = 25ºC)

130

A

*

Re _(yfs)

R_{DS (on)}

Ciss

Coss

Crss

t_{d (on)}

t_r

S

0.84

720

150

65

1.10

Ω

V

_GS= 10V, I_D= 3.5A

P_D

E_AS

W

mJ

A

pF

ns

V

2

*

V

_DS= 10V, f = 1.0MHz,

V_GS= 0V

I_AS

7

Tch

Tstg

150

ºC

25

I_D= 3.5A, V_DD= 200V,

R_L= 57Ω, V_GS= 10V,

See Figure 2 on Page 5.

40

–55 to +150

t_{d (off)}

t_f

70

1: P_W100µs, duty cycle 1%

2: V_DD= 30V, L = 5mH, I_L= 7A, unclamped, R_G= 50Ω,

See Figure 1 on Page 5.

*

50

*

V_SD

1.0

1.5

I_SD= 7A, V_GS= 0V

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

1.0

0.8

0.6

0.4

7

6

5

4

V_GS= 10V

V_DS=20V

10V

5.5V

6

5

5V

4

3

2

3

2

1

0

V_GS= 4.5V

T_C= –55ºC

25ºC

125ºC

0.2

0

1

0

5

10

15

20

0

2

4

6

8

0

1

2

3

4

5

6

7

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

10

8

2.5

2.0

10

5

V_DS= 20V

I_D= 3.5A

V_GS= 10V

T

_C= –55ºC

25ºC

I_D= 7A

125ºC

6

1.5

1.0

1

4

I_D= 3.5A

0.5

2

0

0.5

0

0.2

0.05 0.1

4

5

10

20

150

0.5

1

5 7

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

2000

1000

500

7

6

5

4

3

2

1

0

50

40

I_D(pulse) max

V_GS= 0V

f= 1MHz

10

5

I_Dmax

30

20

10

0

Ciss

1

V_GS= 0V

5V,10V

100

50

0.5

Coss

Crss

40

0.1

Without heatsink

20

0.05

0

10

20

30

50

0

0.2

0.4

0.6

0.8

1.0

0

50

100

Ta (ºC)

150

3

5

10

50 100

V_DS(V)

500

V_DS(V)

V_SD(V)

29

2SK2702

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

450

max

V_{(BR) DSS}

I_GSS

I_DSS

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

V_DSS

V_GSS

I_D

450

±30

V

±100

100

4.0

V_DS= 450V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 5A

±10

A

V_TH

2.0

5

3.0

7

1

I_{D (pulse)}

±40

A

*

Re _(yfs)

R_{DS (on)}

Ciss

Coss

Crss

t_{d (on)}

t_r

S

0.66

1000

200

95

0.80

Ω

V

_GS= 10V, I_D= 5A

P_D

E_AS

35 (Tc = 25ºC)

300

W

mJ

A

pF

ns

V

2

*

V

_DS= 10V, f = 1.0MHz,

V_GS= 0V

I_AS

10

Tch

Tstg

150

ºC

25

I_D= 5A, V_DD= 200V,

R_L= 40Ω, V_GS= 10V,

See Figure 2 on Page 5.

30

–55 to +150

t_{d (off)}

t_f

85

1: P_W100µs, duty cycle 1%

2: V_DD= 30V, L = 6mH, I_L= 10A, unclamped, R_G= 50Ω,

See Figure 1 on Page 5.

*

45

V_SD

1.0

1.5

I_SD= 10A, V_GS= 0V

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

1.0

0.8

10

8

10

8

5.5V

10V

V_GS= 10V

V_DS= 20V

5V

6

4

2

0

0.6

0.4

0.2

0

T_C= –55ºC

25ºC

4

V_GS= 4.5V

125ºC

2

0

5

10

15

20

0

2

4

6

8

0

2

4

6

8

10

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

10

8

20

10

5

2.0

1.5

1.0

0.5

0

I_D= 5A

V_GS= 10V

V_DS= 20V

T_C= –55ºC

25ºC

I_D= 10A

125ºC

6

4

I_D= 5A

1

2

0

0.5

0.2

0.05 0.1

4

5

10

20

150

0.5

1

5

10

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

5000

10

8

50

40

V_GS= 0V

I_D(pulse) max

I_Dmax

f= 1MHz

10

5

30

20

10

0

Ciss

1000

500

6

5V,10V

1

4

Coss

Crss

0.5

100

50

2

V_GS= 0V

0.1

Without heatsink

0.05

20

0

10

20

30

40

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

150

3

5

10

50 100

V_DS(V)

500

V_DS(V)

V_SD(V)

30

2SK2703

External dimensions

2 ...... FM100

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

450

max

V_{(BR) DSS}

I_GSS

I_DSS

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

V_DSS

V_GSS

I_D

450

±30

V

±100

100

4.0

V_DS= 450V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 5A

±10

A

V_TH

2.0

5

3.0

7

1

I_{D (pulse)}

±40

A

*

Re _(yfs)

R_{DS (on)}

Ciss

Coss

Crss

t_{d (on)}

t_r

S

0.66

1000

200

95

0.80

Ω

V_GS= 10V, I_D= 5A

P_D

75 (Tc = 25ºC)

300

W

mJ

A

pF

ns

V

2

E_AS

*

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

I_AS

10

Tch

Tstg

150

ºC

25

I_D= 5A, V_DD= 200V,

R_L= 40Ω, V_GS= 10V,

See Figure 2 on Page 5.

30

–55 to +150

t_{d (off)}

t_f

85

1: P_W100µs, duty cycle 1%

2: V_DD= 30V, L = 6mH, I_L= 10A, unclamped, R_G= 50Ω,

See Figure 1 on Page 5.

*

45

*

V_SD

1.0

1.5

I_SD= 10A, V_GS= 0V

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

1.0

0.8

10

8

10

8

5.5V

10V

V_GS= 10V

V_DS= 20V

5V

6

4

2

0

0.6

0.4

0.2

0

T_C= –55ºC

25ºC

4

V_GS= 4.5V

125ºC

2

0

5

10

15

20

0

2

4

6

8

0

2

4

6

8

10

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

10

8

20

10

5

2.0

1.5

1.0

0.5

0

I_D= 5A

V_GS= 10V

V_DS= 20V

T_C= –55ºC

25ºC

I_D= 10A

125ºC

6

4

I_D= 5A

1

2

0

0.5

0.2

4

5

10

20

150

0.05 0.1

0.5

1

5

10

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

5000

10

8

50

75

V_GS= 0V

70

60

50

40

30

20

10

0

I_D(pulse) max

I_Dmax

f= 1MHz

10

5

Ciss

1000

500

6

5V,10V

4

1

Coss

Crss

100

50

0.5

2

V_GS= 0V

Without heatsink

20

0.1

0

10

20

30

40

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

150

3

5

10

50 100

V_DS(V)

500

V_DS(V)

V_SD(V)

31

2SK2704

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

450

max

V_{(BR) DSS}

I_GSS

I_DSS

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

V_DSS

V_GSS

I_D

450

±30

V

±100

100

4.0

V_DS= 450V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 6.5A

±13

A

V_TH

2.0

6.0

3.0

9.0

1

I_{D (pulse)}

±52

A

*

Re _(yfs)

R_{DS (on)}

Ciss

Coss

Crss

t_{d (on)}

t_r

S

0.48

1300

280

130

30

0.57

Ω

V

_GS= 10V, I_D= 6.5A

P_D

E_AS

40 (Tc = 25ºC)

400

W

mJ

A

pF

ns

V

2

*

V

_DS= 10V, f = 1.0MHz,

V_GS= 0V

I_AS

13

Tch

Tstg

150

ºC

I_D= 6.5A, V_DD200V,

R_L= 30Ω, V_GS= 10V,

See Figure 2 on Page 5.

40

–55 to +150

t_{d (off)}

t_f

95

1: P_W100µs, duty cycle 1%

2: V_DD= 30V, L = 4.5mH, I_L= 13A, unclamped, R_G= 50Ω,

See Figure 1 on Page 5.

*

50

V_SD

1.0

1.5

I_SD= 13A, V_GS= 0V

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

0.6

0.5

14

12

10

V_DS= 20V

V_GS= 10V

5.5V

10V

12

10

8

0.4

0.3

0.2

0.1

0

8

6

4

2

0

5V

6

T_C= –55ºC

25ºC

4

4.5V

125ºC

2

V_GS= 4V

15

0

5

10

20

0

2

4

6

8

0

2

4

6

8

10

12 13

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

10

8

20

10

5

1.4

1.2

1.0

I_D= 6.5A

V_GS= 10V

V_DS= 20V

T_C= –55ºC

25ºC

I_D= 13A

I_D= 6.5A

125ºC

6

0.8

0.6

4

1

0.4

0.2

0

2

0

0.5

0.2

0.05 0.1

4

5

10

20

150

0.5

1

5

13

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

70

50

5000

14

12

10

40

V_GS= 0V

I_D(pulse) max

I_Dmax

f= 1MHz

30

20

10

0

10

5

Ciss

1000

500

8

6

4

2

0

5V,10V

1

0.5

Coss

Crss

40

V_GS= 0V

100

50

0.1

Without heatsink

0.05

0

10

20

30

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

150

2

5

10

50 100

V_DS(V)

500

V_DS(V)

V_SD(V)

32

2SK2705

External dimensions

2 ...... FM100

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

450

max

V_{(BR) DSS}

I_GSS

I_DSS

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

V_DSS

V_GSS

I_D

450

±30

V

±100

100

4.0

V_DS= 450V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 6.5A

±13

A

V_TH

2.0

6.0

3.0

9.0

1

I_{D (pulse)}

±52

A

*

Re _(yfs)

R_{DS (on)}

Ciss

Coss

Crss

t_{d (on)}

t_r

S

0.48

1300

280

130

30

0.57

Ω

V_GS= 10V, I_D= 6.5A

P_D

E_AS

75 (Tc = 25ºC)

400

W

mJ

A

pF

ns

V

2

*

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

I_AS

13

Tch

Tstg

150

ºC

I_D= 6.5A, V_DD200V,

R_L= 30Ω, V_GS= 10V,

See Figure 2 on Page 5.

40

–55 to +150

t_{d (off)}

t_f

95

1: P_W100µs, duty cycle 1%

2: V_DD= 30V, L = 4.5mH, I_L= 13A, unclamped, R_G= 50Ω,

See Figure 1 on Page 5.

*

50

*

V_SD

1.0

1.5

I_SD= 13A, V_GS= 0V

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

0.6

0.5

14

12

10

V_DS= 20V

V_GS= 10V

5.5V

10V

12

10

8

0.4

0.3

0.2

0.1

0

8

6

4

2

0

5V

6

T_C= –55ºC

25ºC

4

4.5V

125ºC

2

V_GS= 4V

15

0

5

10

20

0

2

4

6

8

0

2

4

6

8

10

12 13

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

10

8

20

10

5

1.4

1.2

1.0

I_D= 6.5A

V_GS= 10V

V_DS= 20V

T_C= –55ºC

25ºC

I_D= 13A

I_D= 6.5A

125ºC

6

0.8

0.6

4

1

0.4

0.2

0

2

0

0.5

0.2

0.05 0.1

4

5

10

20

150

0.5

1

5

13

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

70

50

5000

14

12

10

75

V_GS= 0V

70

60

50

40

30

20

10

0

I_D(pulse) max

I_Dmax

f= 1MHz

Ciss

10

5

1000

500

8

6

4

2

0

5V,10V

1

Coss

Crss

40

0.5

V_GS= 0V

100

50

Without heatsink

0.1

0

10

20

30

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

150

3

5

10

50 100

V_DS(V)

500

V_DS(V)

V_SD(V)

33

2SK2706

External dimensions

2 ...... FM100

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

450

max

V_{(BR) DSS}

I_GSS

I_DSS

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

V_DSS

V_GSS

I_D

450

±30

V

±100

100

4.0

V_DS= 450V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 9A

±18

A

V_TH

2.0

10

3.0

15

1

I_{D (pulse)}

±72

A

*

Re _(yfs)

R_{DS (on)}

Ciss

Coss

Crss

t_{d (on)}

t_r

S

0.24

2500

500

260

40

0.30

Ω

V_GS= 10V, I_D= 9A

P_D

E_AS

85 (Tc = 25ºC)

700

W

mJ

A

pF

ns

V

2

*

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

I_AS

18

Tch

Tstg

150

ºC

I_D= 9A, V_DD= 200V,

R_L= 22Ω, V_GS= 10V,

See Figure 2 on Page 5.

60

–55 to +150

t_{d (off)}

t_f

170

85

1: P_W100µs, duty cycle 1%

2: V_DD= 30V, L = 4mH, I_L= 18A, unclamped, R_G= 50Ω,

See Figure 1 on Page 5.

*

V_SD

1.0

1.5

I_SD= 18A, V_GS= 0V

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

0.3

18

16

14

12

10

18

16

14

12

10

8

V_GS= 10V

V_DS= 20V

10V

5V

0.2

0.1

0

8

6

4

2

0

4.5V

6

4

2

0

T_C= –55ºC

25ºC

125ºC

V_GS= 4V

15

0

5

10

20

0

2

4

6

8

0

2

4

6

8

10

12

14

16

18

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

30

10

8

0.7

0.6

0.5

0.4

V_DS= 20V

I_D= 9A

V_GS= 10V

T_C= –55ºC

25ºC

10

5

125ºC

6

I_D= 18A

I_D= 9A

0.3

0.2

0.1

0

4

1

2

0

0.5

0.3

0.05 0.1

4

5

10

20

150

0.5

1

5

10 18

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

10000

5000

18

16

14

12

10

8

100

50

90

V_GS= 0V

I

D

(pulse) max

80

70

60

50

40

30

20

10

0

f= 1MHz

I_Dmax

Ciss

10

5

1000

500

V_GS= 0V

5V,10V

1

6

Coss

Crss

40

0.5

4

2

Without heatsink

100

0.1

0

10

20

30

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

150

3

5

10

50 100

V_DS(V)

500

V_DS(V)

V_SD(V)

34

2SK2707

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

600

max

V_{(BR) DSS}

I_GSS

I_DSS

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

V_DSS

V_GSS

I_D

600

±30

V

±100

100

4.0

V_DS= 600V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 2A

±4.5

A

V_TH

2.0

2.4

3.0

3.5

1.45

560

130

65

1

I_{D (pulse)}

±18

A

*

Re _(yfs)

R_{DS (on)}

Ciss

Coss

Crss

t_{d (on)}

t_r

S

1.85

Ω

V

_GS= 10V, I_D= 2A

P_D

E_AS

35 (Tc = 25ºC)

50

W

mJ

A

pF

ns

V

2

*

V

_DS= 10V, f = 1.0MHz,

V_GS= 0V

I_AS

4.5

Tch

Tstg

150

ºC

20

I_D= 2A, V_DD= 250V,

R_L= 125Ω, V_GS= 10V,

See Figure 2 on Page 5.

30

–55 to +150

t_{d (off)}

t_f

65

1: P_W100µs, duty cycle 1%

2: V_DD= 30V, L = 5mH, I_L= 4.5A, unclamped, R_G= 50Ω,

See Figure 1 on Page 5.

*

90

*

V_SD

0.9

1.5

I_SD= 4.5A, V_GS= 0V

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

2.0

1.6

1.2

5

4

V_GS= 10V

V_DS= 20V

10V

5V

4

3

2

1

0

3

2

1

0

4.5V

0.8

0.4

0

T_C= –55ºC

25ºC

125ºC

V_GS= 4V

15

0

5

10

20

0

2

4

6

8

0

1

2

3

4

5

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

10

5

10

8

5

V_DS= 20V

I_D= 2A

V_GS= 10V

T_C= –55ºC

4

3

2

25ºC

I_D= 4.5A

125ºC

6

1

4

I_D= 2A

0.5

2

0

1

0

0.2

0.05 0.1

4

5

10

20

150

0.5

1

4.5

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

5000

5

20

10

5

40

V_GS= 0V

I_D(pulse) max

f= 1MHz

4

3

I_Dmax

30

20

10

0

1000

500

Ciss

1

V_GS= 0V

5V,10V

2

1

0

0.5

100

50

Coss

Crss

0.1

Without heatsink

20

0.05

0

10

20

30

40

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

150

3

5

10

50 100

V_DS(V)

500 700

V_DS(V)

V_SD(V)

35

2SK2708

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

600

max

V_{(BR) DSS}

I_GSS

I_DSS

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

V_DSS

V_GSS

I_D

600

V

±100

100

4.0

±30

V_DS= 600V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 3.5A

±7

A

V_TH

2.0

4.0

3.0

6.0

0.85

950

220

120

30

1

I_{D (pulse)}

±28

40 (Tc = 25ºC)

150

A

*

Re _(yfs)

R_{DS (on)}

Ciss

Coss

Crss

t_{d (on)}

t_r

S

1.1

Ω

V

_GS= 10V, I_D= 3.5A

P_D

E_AS

W

mJ

A

pF

ns

V

2

*

V

_DS= 10V, f = 1.0MHz,

V_GS= 0V

I_AS

7

Tch

Tstg

150

ºC

I_D= 3.5A, V_DD= 250V,

R_L= 71Ω, V_GS= 10V,

See Figure 2 on Page 5.

27

–55 to +150

t_{d (off)}

t_f

100

50

1: P_W100µs, duty cycle 1%

2: V_DD= 30V, L = 6mH, I_L= 7A, unclamped, R_G= 50Ω,

See Figure 1 on Page 5.

*

V_SD

0.9

1.5

I_SD= 7A, V_GS= 0V

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

1.0

0.8

0.6

7

6

5

7

V_GS= 10V

V_DS= 20V

10V 5.5V

5V

6

5

4

3

4.5V

0.4

0.2

0

2

1

T_C= –55ºC

25ºC

125ºC

1

V_GS= 4V

0

5

10

15

20

0

2

4

6

8

0

1

2

3

4

5

6

7

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

10

5

10

8

2.5

2.0

1.5

1.0

V_DS= 20V

I_D= 3.5A

V_GS= 10V

T_C= –55ºC

25ºC

125ºC

I_D= 7A

6

4

1

I_D= 3.5A

2

0

0.5

0

0.5

0.3

4

5

10

20

150

0.05 0.1

0.5

1

5 7

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

I_D(pulse) max

Ta — P_DCharacteristics

(Tc=25ºC)

5000

7

6

5

4

3

2

1

0

30

40

V_GS= 0V

f= 1MHz

10

5

I_Dmax

30

20

10

0

Ciss

1000

500

1

V_GS= 0V

5V,10V

0.5

Coss

Crss

40

100

40

0.1

Without heatsink

0.05

0

10

20

30

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

150

3

5

10

50 100

V_DS(V)

500 700

V_DS(V)

V_SD(V)

36

2SK2709

External dimensions

2 ...... FM100

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

600

max

V_{(BR) DSS}

I_GSS

I_DSS

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

V_DSS

V_GSS

I_D

600

±30

V

±100

100

4.0

V_DS= 600V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 4A

±8.5

A

V_TH

2.0

5.0

3.0

7.0

1

I_{D (pulse)}

±34

A

*

Re _(yfs)

R_{DS (on)}

Ciss

Coss

Crss

t_{d (on)}

t_r

S

0.65

1200

270

150

30

0.85

Ω

V_GS= 10V, I_D= 4A

P_D

E_AS

85 (Tc = 25ºC)

300

W

mJ

A

pF

ns

V

2

*

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

I_AS

8.5

Tch

Tstg

150

ºC

I_D= 4A, V_DD= 250V,

R_L= 62.5Ω, V_GS= 10V,

See Figure 2 on Page 5.

40

–55 to +150

t_{d (off)}

t_f

110

65

1: P_W100µs, duty cycle 1%

2: V_DD= 30V, L = 8mH, I_L= 8.5A, unclamped, R_G= 50Ω,

See Figure 1on Page 5.

*

V_SD

0.95

1.5

I_SD= 8.5A, V_GS= 0V

37

2SK2710

External dimensions

2 ...... FM100

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

600

max

V_{(BR) DSS}

I_GSS

I_DSS

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

V_DSS

V_GSS

I_D

600

±30

V

±100

100

4.0

V_DS= 600V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 6A

±12

A

V_TH

2.0

7.5

3.0

11

1

I_{D (pulse)}

±48

A

*

Re _(yfs)

R_{DS (on)}

Ciss

Coss

Crss

t_{d (on)}

t_r

S

0.42

1900

410

240

35

0.55

Ω

V_GS= 10V, I_D= 6A

P_D

E_AS

85 (Tc = 25ºC)

400

W

mJ

A

pF

ns

V

2

*

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

I_AS

12

Tch

Tstg

150

ºC

I_D= 6A, V_DD= 250V,

R_L= 20.8Ω, V_GS= 10V,

See Figure 2 on Page 5.

45

–55 to +150

t_{d (off)}

t_f

160

70

1: P_W100µs, duty cycle 1%

2: V_DD= 30V, L = 5.5mH, I_L= 12A, unclamped, R_G= 50Ω,

See Figure 1 on Page 5.

*

V_SD

0.95

1.5

I_SD= 12A, V_GS= 0V

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

0.5

0.4

0.3

12

10

8

12

10

8

V_GS= 10V

V_DS= 20V

10V

5.5V

6

T_C= –55ºC

25ºC

6

5V

0.2

0.1

0

4

2

0

125ºC

2

V_GS= 4.5V

15

0

5

10

20

0

2

4

6

8

0

2

4

6

8

10

12

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

20

10

5

10

8

1.2

1.0

0.8

0.6

V_DS= 20V

I_D= 6A

V_GS= 10V

T_C= –55ºC

25ºC

125ºC

6

I_D= 12A

I_D= 6A

4

0.4

0.2

0

1

2

0

0.5

0.3

4

5

10

20

150

0.05 0.1

0.5

1

5

12

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

I_D(pulse) max

Ta — P_DCharacteristics

(Tc=25ºC)

10000

5000

12

10

8

50

90

V_GS= 0V

80

70

60

50

40

30

20

10

0

f= 1MHz

I_Dmax

10

5

Ciss

1000

500

6

V_GS= 0V

5V,10V

1

4

Coss

Crss

0.5

2

100

50

Without heatsink

0.1

0

10

20

30

40

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

150

3

5

10

50 100

V_DS(V)

500 700

V_DS(V)

V_SD(V)

38

2SK2778

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

100

max

V_{(BR) DSS}

I_GSS

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±20V

V_DSS

V_GSS

I_D

100

V

±100

100

2.0

±20

I_DSS

V_DS= 100V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 6A

V_GS= 10V, I_D= 6A

±12

A

V_TH

1.0

7

1

Re _(yfs)

11

105

130

740

240

75

S

I_{D (pulse)}

±48

30 (Tc = 25ºC)

70

A

*

175

220

mΩ

pF

ns

V

P_D

E_AS

W

mJ

A

R_{DS (on)}

V

_GS= 4V, I_D= 6A

2

*

Ciss

Coss

Crss

t_{d (on)}

t_r

V

_DS= 10V, f = 1.0MHz,

I_AS

12

V_GS= 0V

Tch

Tstg

150

ºC

15

–55 to +150

I_D= 6A, V_DD50V,

R_L= 8.3Ω, V_GS= 10V,

See Figure 2 on Page 5.

55

1: P_W100µs, duty cycle 1%

2: V_DD= 25V, L = 730µH, I_L= 12A, unclamped, R_G= 50Ω,

See Figure 1 on Page 5.

t_{d (off)}

t_f

60

*

20

V_SD

1.0

1.5

I_SD= 12A, V_GS= 0V

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

200

12

10V

V_DS= 10V

4V

10

8

10

8

3.5V

V_GS= 4V

150

100

3V

V_GS= 10V

6

4

2

0

T_C= –55ºC

25ºC

4

2

0

50

0

125ºC

V_GS= 2.5V

0

2

4

6

8

10

0

1

2

3

4

0

2

4

6

8

10

12

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

5

4

3

2

20

10

300

250

I_D= 6 A

V_DS= 10V

T_C= –55ºC

25ºC

V_GS= 4V

125ºC

200

150

100

5

V_GS= 10V

I_D= 12A

I_D= 6A

1

0

50

0

0.4

2

5

10

20

150

0.05 0.1

0.5

1

5

12

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

I_D(pulse) max

Ta — P_DCharacteristics

(Tc=25ºC)

5000

12

10

8

50

V_GS= 0V

30

f= 1MHz

I_Dmax

10

5

1000

500

Ciss

10V

20

10

0

6

4

5V

Coss

1

100

50

0.5

V_GS= 0V

2

0

Crss

40

Without heatsink

20

0.1

0

10

20

30

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

150

0.5

1

5

10

50 100 200

V_DS(V)

V_SD(V)

V_DS(V)

39

2SK2779

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

100

max

V_{(BR) DSS}

I_GSS

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±20V

V_DSS

V_GSS

I_D

100

±20

V

±100

100

2.0

I_DSS

V_DS= 100V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 10A

V_GS= 10V, I_D= 10A

±20

A

V_TH

1.0

12

1

Re _(yfs)

20

60

S

I_{D (pulse)}

±80

A

*

80

95

mΩ

pF

ns

V

P_D

E_AS

35 (Tc = 25ºC)

200

W

mJ

A

R_{DS (on)}

75

V

_GS= 4V, I_D= 10A

2

*

Ciss

Coss

Crss

t_{d (on)}

t_r

1630

480

180

20

V

_DS= 10V, f = 1.0MHz,

I_AS

20

V_GS= 0V

Tch

Tstg

150

ºC

–55 to +150

I_D= 10A, V_DD50V,

R_L= 5Ω, V_GS= 10V,

See Figure 2 on Page 5.

90

1: P_W100µs, duty cycle 1%

2: V_DD= 25V, L = 750µH, I_L= 20A, unclamped, R_G= 50Ω,

See Figure 1 on Page 5.

t_{d (off)}

t_f

120

55

*

V_SD

1.0

1.5

I_SD= 20A, V_GS= 0V

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

80

60

40

20

0

20

15

10

20

15

10

10V

V_DS= 10V

V_GS= 4V

4V

3.5V

3V

V_GS= 10V

T_C= –55ºC

25ºC

2.5V

5

0

5

0

125ºC

V_GS= 2V

0

2

4

6

8

10

0

1

2

3

4

0

5

10

15

20

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

2.5

2.0

1.5

1.0

50

150

100

I_D= 10A

V_DS= 10V

T_C= –55ºC

25ºC

V_GS= 4V

125ºC

10

5

V_GS= 10V

I_D= 20A

I_D= 10A

50

0

0.5

0

1

0.5

2

5

10

20

150

0.05 0.1

0.5

1

5

10 20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

5000

20

15

10

100

50

40

V_GS= 0V

I_D(pulse) max

I_Dmax

f= 1MHz

Ciss

30

20

10

0

10

5

1000

500

5V

Coss

1

5

0

0.5

V_GS= 0V

100

50

Crss

40

Without heatsink

0.1

0

10

20

30

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

150

0.5

1

5

10

50 100 200

V_DS(V)

V_SD(V)

V_DS(V)

40

2SK2803

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

450

max

V_{(BR) DSS}

I_GSS

I_DSS

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

V_DSS

V_GSS

I_D

450

V

±100

100

4.0

±30

V_DS= 450V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 1.5A

±3

A

V_TH

2.0

1.5

1

I_{D (pulse)}

±12

A

*

Re _(yfs)

R_{DS (on)}

Ciss

Coss

Crss

t_{d (on)}

t_r

2.1

340

75

S

2.8

Ω

V

_GS= 10V, I_D= 1.5A

P_D

E_AS

30 (Tc = 25ºC)

W

mJ

A

pF

ns

V

2

30

*

V

_DS= 10V, f = 1.0MHz,

V_GS= 0V

I_AS

3

150

26

Tch

Tstg

ºC

18

I_D= 1.5A, V_DD200V,

R_L= 133Ω, V_GS= 10V,

See Figure 2 on Page 5.

30

–55 to +150

t_{d (off)}

t_f

45

1: P_W100µs, duty cycle 1%

2: V_DD= 30V, L = 6.3mH, I_L= 3.0A, unclamped, R_G= 50Ω,

See Figure 1 on Page 5.

*

85

*

V_SD

0.9

1.4

I_SD= 3A, V_GS= 0V

41

2SK2804

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

450

max

V_{(BR) DSS}

I_GSS

I_DSS

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

V_DSS

V_GSS

I_D

450

V

±100

100

4.0

±30

V_DS= 450V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 2.5A

±5

A

V_TH

2.0

2.6

1

I_{D (pulse)}

±20

A

*

Re _(yfs)

R_{DS (on)}

Ciss

Coss

Crss

t_{d (on)}

t_r

3.7

1.1

580

125

50

S

1.5

Ω

V

_GS= 10V, I_D= 2.5A

P_D

E_AS

35 (Tc = 25ºC)

W

mJ

A

pF

ns

V

2

90

*

V

_DS= 10V, f = 1.0MHz,

V_GS= 0V

I_AS

5

150

Tch

Tstg

ºC

20

I_D= 2.5A, V_DD200V,

R_L= 80Ω, V_GS= 10V,

See Figure 2 on Page 5.

30

–55 to +150

t_{d (off)}

t_f

55

1: P_W100µs, duty cycle 1%

2: V_DD= 30V, L = 6.7mH, I_L= 5.0A, unclamped, R_G= 50Ω,

See Figure 1 on Page 5.

*

50

V_SD

0.9

1.4

I_SD= 5A, V_GS= 0V

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

1.5

1.0

0.5

0

5

V_DS= 20V

10V

V_GS= 10V

6V

5.5V

4

3

4

3

2

T_C= –55ºC

25ºC

5V

2

1

0

125ºC

1

0

V_GS= 4.5V

0

5

10

15

20

0

2

4

6

8

0

1

2

3

4

5

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

10

8

10

5

3.0

2.5

V_DS= 20V

I_D= 2.5A

V_GS= 10V

T_C= –55ºC

25ºC

125ºC

2.0

1.5

1.0

I_D= 5A

6

1

4

I_D= 2.5A

0.5

2

0

0.5

0

0.2

0.05 0.1

4

5

10

20

150

0.5

1

5

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

2000

1000

500

5

4

3

2

1

0

30

40

V_GS= 0V

I_D(pulse) max

I_Dmax

f= 1MHz

10

5

Ciss

30

20

10

0

1

100

50

V_GS= 0V

5V,10V

Coss

Crss

0.5

0.1

Without heatsink

10

0.05

0

10

20

30

40

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

150

3

5

10

50 100

V_DS(V)

500

V_DS(V)

V_SD(V)

42

2SK2805

External dimensions

2 ...... FM100

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

450

max

V_{(BR) DSS}

I_GSS

I_DSS

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

V_DSS

V_GSS

I_D

450

±30

V

±100

100

4.0

V_DS= 450V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 7.5A

V_GS= 10V, I_D= 7.5A

±15

A

V_TH

2.0

8.0

3.0

11.5

0.30

2100

430

210

35

1

I_{D (pulse)}

±60

A

*

Re _(yfs)

R_{DS (on)}

Ciss

Coss

Crss

t_{d (on)}

t_r

S

0.38

Ω

P_D

E_AS

80 (Tc = 25ºC)

550

W

mJ

A

pF

ns

V

2

*

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

I_AS

15

Tch

Tstg

150

ºC

I_D= 7.5A, V_DD200V,

R_L= 26.7Ω, V_GS= 10V,

See Figure 2 on Page 5.

45

–55 to +150

t_{d (off)}

t_f

130

60

1: P_W100µs, duty cycle 1%

2: V_DD= 30V, L = 4.6mH, I_L= 15A, unclamped, R_G= 50Ω,

See Figure 1 on Page 5.

*

V_SD

0.95

1.4

I_SD= 15A, V_GS= 0V

43

2SK2848

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Conditions

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

min

600

max

V_{(BR) DSS}

V

nA

µA

V

I

=

GS

DS

GS

100µA, V

= 0V

GS

D

V_DSS

V_GSS

I_D

600

V

I

±

100

4.0

V

= ±30V

GSS

DSS

±30

=

600V, V

= 0V

GS

±2

A

V

TH

2.0

1.2

3.0

1.7

3.0

290

70

10V, I

20V, I

10V, I

=

250µA

1A

D

1

I_{D (pulse)}

±8

A

*

Re _(yfs)

R_{DS (on)}

Ciss

S

3.8

Ω

1A

P_D

E_AS

30 (Tc = 25ºC)

W

mJ

A

pF

ns

V

2

10

*

V

=

10V, f

0V

=

1.0MHz,

DS

Coss

Crss

GS

I_AS

2

150

30

Tch

Tstg

ºC

t_{d (on)}

16

I_D= 1A, V_DD250V,

R_L= 250Ω, V_GS= 10V,

See Figure 2 on Page 5.

t

30

r

–55 to +150

t_{d (off)}

45

1: P_W100µs, duty cycle 1%

2: V_DD= 30V, L = 5mH, I_L= 2.0A, unclamped, R_G= 50Ω,

See Figure 1 on Page 5.

*

t

145

0.9

f

V

SD

1.4

I

=

2.0A, V

= 0V

SD

GS

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

4

3

2

2.0

1.5

1.0

10V

V_DS= 20V

V_GS= 10V

5.5V

1.5

1.0

5V

4.5V

0.5

0

1

0

0.5

0

T_C= –55ºC

25ºC

125ºC

V

_GS= 4V

0

5

10

V_DS(V)

15

20

0

2

4

6

8

0

0.5

1.0

1.5

2.0

150

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

20

15

10

5

8

V_DS= 20V

I_D= 1A

V_GS= 10V

T

_C= –55ºC

25ºC

6

4

2

0

125ºC

1

I_D= 2A

I_D= 1A

0.5

5

0

0.2

0.05

4

5

10

20

0.1

0.5

1

2

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

1000

500

2.0

1.5

1.0

0.5

0

10

5

V

_GS= 0V

f= 1MHz

30

I_D(pulse) max

I_Dmax

Ciss

20

10

0

1

100

50

0.5

V_GS= 0V

5V,10V

Coss

0.1

Crss

40

Without heatsink

0.05

0.03

10

0

10

20

30

50

0

50

100

Ta (ºC)

0

0.5

1.0

1.5

3

5

10

50 100

V_DS(V)

500 700

V_DS(V)

V_SD(V)

44

2SJ424

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Conditions

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

min

max

V

–60

V

–60

V

nA

µA

V

I

= –250µA, V = 0V

DSS

GSS

(BR) DSS

D

GS

±

20

I

500

V

=

20V

GSS

DSS

GS

DS

GS

±

I

5

A

–250

–4.0

= –60V, V = 0V

GS

D

±

I

20 (Tch 150ºC)

25 (Tc = 25ºC)

150

A

V

TH

–2.0

= –10V, I = –250µA

D

D (pulse)

P

W

ºC

Re

1.0

1.6

0.35

270

170

75

S

= –10V, I = –2.5A

D

(yfs)

Tch

R

0.5

Ω

= –10V, I = –2.5A

DS (on)

D

Tstg

–55 to +150

Ciss

pF

ns

V

= –25V, f = 1.0MHz,

DS

= 0V

GS

Coss

I

V

= –2.5A, V = –30V,

DD

D

t

on

off

= –10V,

GS

35

See Figure 3 on Page 5.

45

2SJ425

External dimensions

1 ...... FM20

Absolute Maximum Ratings

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

max

V_DSS

V_GSS

I_D

–60

V

V_{(BR) DSS}

I_GSS

–60

V

nA

µA

V

I_D= –250µA, V_GS= 0V

±

20

500

V_GS

=

20V

±

8

A

I_DSS

–250

–4.0

V_DS= –60V, V_GS= 0V

V_DS= –10V, I_D= –250µA

V_DS= –10V, I_D= –4.0A

V_GS= –10V, I_D= –4.0A

±

I_{D (pulse)}

P_D

A

V_TH

–2.0

32 (Tch 150ºC)

30 (Tc = 25ºC)

150

W

ºC

Re _(yfs)

R_{DS (on)}

Ciss

1.8

2.8

0.2

580

360

90

S

Tch

0.28

Ω

Tstg

–55 to +150

pF

ns

V_DS= –25V, f = 1.0MHz,

V_GS= 0V

Coss

t_on

I

_D= –4.0A, V_DD= –30V,

V_GS= –10V,

See Figure 3 on Page 5.

t_off

45

V_DS— I_DCharacteristics

V_GS— I_DCharacteristics

I_D— R_{DS (ON)}Characteristics

–

250

200

150

100

10

8

6

4

= –

10V

V_DS

=

–

V_GS

10V

=

–

7V

V_GS–10V

–

8

6

4

2

0

=

T_C125ºC

– 6V

25ºC

–

55ºC

2

0

50

0

–

5V

–

8

0

2

4

6

8

10

0

2

4

6

8

0

1

2

3

4

5

6

7

V_DS(V)

V_GS(V)

I_D(A)

I

_D— Re(yfs) Characteristics

V_GS— V_DSCharacteristics

T_C— R_{DS (ON)}Characteristics

10

5

–

5

400

300

200

=

–

10V

V_DS

=

–

T_C

55ºC

25ºC

=

I_D– 4A

V_GS

=

–

10V

–

4

3

2

125ºC

1

=

–

I_D

8A

4A

100

0

–1

0.5

0.3

0

–

20

150

0.1

0.5

1

5

10

5

10

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

V_DS— Capacitance Characteristics

V

_SD— I_DRCharacteristics

–10V

Safe Operating Area

Ta — P_DCharacteristics

(Tc=25ºC)

–

30

–

50

2000

1000

500

8

6

I_D(pulse) max

=

V_GS0V

=

f

1MHz

I_Dmax

Ciss

–10

–

5

20

10

0

Coss

Crss

–

5V

–4

–1

100

50

–0.5

–

2

0

=

V_GS0V

Without heatsink

0.1

–0.05

20

–10

–20

V_DS(V)

–30

–40

–50

–

4

0

1

2

3

–

1

–

10

– –

50 100

0

50

100

Ta (ºC)

150

0.5

5

V_SD(V)

V_DS(V)

46

MEMO

47

Discontinued part guide

Discontinued Items

Substitute Part

Part Number

V_DSS(V)

I_D(A)

R_{DS (ON)}max (Ω)

Package

450

60

10

45

0.7

MT100

FM100

2SK979

—

0.002

2SK1193

Not for new design

Substitute Part

Part Number

V

_DSS(V)

I_D(A)

R_{DS (ON)}max (Ω)

Package

60

400

60

15

2

0.14

3.60

1.80

1.00

0.55

0.30

0.200

0.050

0.028

0.045

3.50

2.00

1.50

0.95

0.75

0.55

0.45

FM20

FM100

FM20

FM100

FM20

FM100

2SJ426

—

2SK1366

2SK1367

2SK1368

2SK1369

2SK1370

2SK1711

2SK1713

2SK1714

2SK1715

2SK2156A

2SK2238

2SK2239

2SK2240

2SK2241

2SK2242

2SK2243

2SK2244

2SK2245

2SK2803

2SK2804

2SK2701

2SK2704

2SK2706

2SK2778

—

3

5

10

15

10

22

30

40

25

1.5

3

60

—

60

—

60

—

450

2SK2803

2SK2804

2SK2702

2SK2704

2SK2705

5

7

10

12

15

48

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