Silicon MOS FETs (Small Signal)
2SK620
Silicon N-Channel MOS FET
For switching
unit: mm
2.8 –+00..32
0.65±0.15
1.5 –+00..0255
0.65±0.15
■ Features
● High-speed switching
● Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
1
2
3
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
V
0.1 to 0.3
0.4±0.2
Drain to Source breakdown voltage VDSS
50
Gate to Source voltage
Drain current
VGSO
ID
8
100
V
mA
mA
mW
°C
1: Gate
2: Source
3: Drain
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package (3-pin)
Max drain current
IDP
PD
200
Allowable power dissipation
Channel temperature
Storage temperature
150
Tch
Tstg
150
Marking Symbol: 3N
Internal Connection
−55 to +150
°C
D
G
S
■ Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
IDSS
Conditions
min
typ
max
Unit
Drain to Source cut-off current
Gate to Source leakage current
VDS = 10V, VGS = 0
VGS = 8V, VDS = 0
10
50
µA
nA
V
IGSS
Drain to Source breakdown voltage VDSS
ID = 100µA, VGS = 0
50
Gate threshold voltage
Vth
ID = 100µA, VDS = VGS
ID = 20mA, VGS = 5V
1.5
3.5
50
V
Drain to Source ON-resistance
Forward transfer admittance
RDS(on)
| Yfs |
Ω
ID = 20mA, VDS = 5V, f = 1kHz
20
30
mS
pF
pF
pF
ns
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
15
5
VDS = 5V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
*
1
Turn-on time
Turn-off time
ton
VDD = 5V, VGS = 0 to 5V, RL = 200Ω
VDD = 5V, VGS = 5 to 0V, RL = 200Ω
10
20
*
toff
ns
* ton, toff measurement circuit
Vout
200Ω
90%
10%
Vin
VGS = 5V
VDD = 5V
Vout
10%
90%
50Ω
ton
toff
1
