Silicon MOS FETs (Small Signal)
2SK665
Silicon N-Channel MOS FET
For switching
unit: mm
2.1±0.1
■ Features
0.425
1.25±0.1
0.425
● High-speed switching
● Small drive current owing to high input inpedance
● High electrostatic breakdown voltage
1
3
2
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Symbol
VDS
VGSO
ID
Ratings
Unit
V
20
0.2±0.1
8
100
V
mA
mA
mW
°C
1: Gate
2: Source
3: Drain
Max drain current
IDP
200
EIAJ: SC-70
S-Mini Type Package (3-pin)
Allowable power dissipation
Channel temperature
Storage temperature
PD
150
Tch
150
Marking Symbol: 3O
Internal Connection
Tstg
−55 to +150
°C
D
S
R1
G
R2
■ Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
IDSS
Conditions
min
typ
max
10
Unit
µA
µA
V
Drain to Source cut-off current
Gate to Source leakage current
VDS = 10V, VGS = 0
GS = 8V, VDS = 0
IGSS
V
40
20
80
Drain to Source breakdown voltage VDSS
ID = 100µA, VGS = 0
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
High level output voltage
Low level output voltage
Input resistance
Vth
ID = 100µA, VDS = VGS
1.5
3.5
50
V
3
*
RDS(on)
| Yfs |
VOH
VSL
ID = 20mA, VGS = 5V
Ω
ID = 20mA, VDS = 5V, f = 1kHz
VDD = 5V, VGS = 1V, RL = 200Ω
VDD = 5V, VGS = 5V, RL = 200Ω
20
mS
V
4.5
1
200
1
V
1
*
R1 + R2
100
kΩ
µs
µs
2
*
Turn-on time
ton
VDD = 5V, VGS = 0 to 5V, RL = 200Ω
2
*
Turn-off time
toff
VDD = 5V, VGS = 5 to 0V, RL = 200Ω
1
2
1 Resistance ratio R1/R2 = 1/50
*
ton, toff measurement circuit 3 Pulse measurement
*
*
Vout
200Ω
90%
10%
Vin
Vout
VGS = 5V
50Ω
VDD = 5V
10%
90%
ton
toff
1
