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2SK4016(Q)

型号：

2SK4016(Q)

品牌：

TOSHIBA[ TOSHIBA ]

页数：

6 页

PDF大小：

212 K

下载PDF手册
2SK4016  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI)  
2SK4016  
Switching Regulator Applications  
Unit: mm  
•
•
•
•
Low drain-source ON-resistance: R  
High forward transfer admittance: |Y | = 10 S (typ.)  
= 0.33 Ω (typ.)  
DS (ON)  
fs  
Low leakage current: I  
= 100 μA (V  
= 600 V)  
DSS  
DS  
DS  
Enhancement model: V = 2.0~4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Drain-source voltage  
V
600  
600  
±30  
13  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (t = 1 ms)  
I
52  
50  
DP  
(Note 1)  
1: Gate  
2: Drain  
3: Source  
Drain power dissipation (Tc = 25°C)  
P
W
D
AS  
AR  
Single-pulse avalanche energy  
E
1033  
mJ  
(Note 2)  
Avalanche current  
I
13  
5.0  
A
JEDEC  
JEITA  
―
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
SC-67  
2-10U1B  
Weight : 1.7 g (typ.)  
T
150  
ch  
TOSHIBA  
Storage temperature range  
T
−55~150  
stg  
Thermal Characteristics  
Characteristic  
Symbol  
Max  
Unit  
2
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
R
2.5  
°C/W  
°C/W  
th (ch-c)  
62.5  
th (ch-a)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 90 V, T = 25°C (initial), L = 10.7 mH, I = 13 A, R = 25 Ω  
V
DD  
1
ch  
AR  
G
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device. Handle with care.  
3
1
2005-05-30  
2SK4016  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
= ±25 V, V  
= 0 V  
⎯
±30  
⎯
⎯
⎯
±10  
⎯
μA  
V
GSS  
GS  
I = ±10 μA, V  
G
DS  
Gate-source breakdown voltage  
Drain cutoff current  
V
V
= 0 V  
(BR) GSS  
DS  
= 600 V, V  
I
V
= 0 V  
⎯
100  
⎯
μA  
V
DSS  
DS  
= 10 mA, V  
GS  
Drain-source breakdown voltage  
Gate threshold voltage  
I
= 0 V  
600  
2.0  
⎯
⎯
(BR) DSS  
D
GS  
= 10 V, I = 1 mA  
V
V
V
V
⎯
4.0  
0.50  
⎯
V
th  
DS  
GS  
DS  
D
Drain-source ON-resistance  
Forward transfer admittance  
Input capacitance  
R
= 10 V, I = 6.5 A  
0.33  
10  
Ω
S
DS (ON)  
⎪Y ⎪  
D
= 10 V, I = 6.5 A  
5.0  
⎯
fs  
D
C
C
3100  
20  
⎯
iss  
V
= 25 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
Reverse transfer capacitance  
Output capacitance  
⎯
⎯
DS  
rss  
C
⎯
270  
⎯
oss  
Rise time  
t
r
⎯
⎯
⎯
⎯
60  
110  
50  
⎯
⎯
⎯
⎯
10 V  
GS  
0 V  
I
= 6.5 A  
V
OUT  
D
V
R
L
=
Turn-on time  
t
on  
15 Ω  
30Ω  
Switching time  
ns  
Fall time  
t
f
∼
−
V
200 V  
DD  
<
Duty 1%, t = 10 μs  
Turn-off time  
t
215  
w
off  
62  
40  
22  
Total gate charge  
Gate-source charge  
Gate-drain charge  
Q
⎯
⎯
⎯
⎯
⎯
⎯
g
∼
−
V
400 V, V  
= 10 V, I = 13 A  
nC  
Q
DD  
GS  
D
gs  
gd  
Q
Source-Drain Ratings and Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Continuous drain reverse current  
I
⎯
⎯
⎯
⎯
13  
A
DR  
(Note 1)  
(Note 1)  
Pulse drain reverse current  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
I
⎯
⎯
⎯
⎯
⎯
⎯
52  
−1.7  
⎯
A
V
DRP  
V
I
I
= 13 A, V  
= 13 A, V  
= 0 V  
DSF  
DR  
DR  
GS  
t
= 0 V,  
220  
0.8  
ns  
μC  
rr  
GS  
dI /dt = 100 A/μs  
Q
⎯
DR  
rr  
Marking  
Part No. (or abbreviation code)  
Lot No.  
2SK4016  
A line indicates a  
lead (Pb)-free package or  
lead (Pb)-free finish.  
2
2005-05-30  
2SK4016  
I
– V  
I – V  
D DS  
D
DS  
10  
8
20  
16  
7
10  
6.3  
COMMON SOURCE  
Tc = 25°C  
PULSE TEST  
10  
6.6  
7
8
6
COMMON SOURCE  
Tc = 25°C  
8
6.3  
PULSE TEST  
12  
8
6
4
2
0
5.7  
6
5.4  
5.7  
5.4  
4
V
8
= 5 V  
GS  
V
= 5 V  
GS  
0
0
10  
20  
30  
40  
50  
0
2
4
6
10  
DRAIN−SOURCE VOLTAGE  
V
DS  
(V)  
DRAIN−SOURCE VOLTAGE  
V
(V)  
DS  
I
D
– V  
V
– V  
DS GS  
GS  
24  
20  
16  
10  
8
COMMON SOURCE  
VDS = 10 V  
PULSE TEST  
COMMON SOURCE  
Tc = 25°C  
PULSE TEST  
6
12  
8
I
= 13 A  
D
4
100  
Tc = −55°C  
2
4
0
6
3
25  
0
0
2
4
6
10  
0
4
8
12  
16  
20  
GATE−SOURCE VOLTAGE  
V
GS  
(V)  
GATE−SOURCE VOLTAGE  
V
GS  
(V)  
R
– I  
D
DS (ON)  
|Y | – I  
fs  
D
10  
100  
10  
1
COMMON SOURCE  
Tc = 25°C  
COMMON SOURCE  
= 10 V  
V
DS  
PULSE TEST  
PULSE TEST  
Tc = −55°C  
25  
1
100  
V
= 10 V  
GS  
V
0.1  
0.1  
0.1  
0. 1  
1
10  
100  
1
10  
100  
DRAIN CURRENT  
I
(A)  
DRAIN CURRENT  
I
(A)  
D
D
3
2005-05-30  
2SK4016  
R
− Tc  
I
− V  
DS  
DS (ON)  
DR  
2.0  
1.6  
100  
COMMON SOURCE  
COMMON SOURCE  
= 10 V  
Tc = 25°C  
PULSE TEST  
V
DS  
PULSE TEST  
10  
1.2  
0.8  
5
10  
I
= 10 A  
D
1
6
3
0.4  
0
V = 0 V  
GS  
3
1
0.1  
−80  
−40  
0
40  
80  
120  
160  
0
0.4  
0.8  
1.2  
DS  
1.6  
CASE TEMPERATURE Tc (°C)  
DRAIN−SOURCE VOLTAGE  
V
(V)  
C − V  
V
− Tc  
th  
DS  
4
3
2
1
0
10000  
1000  
COMMON SOURCE  
= 10 V  
V
DS  
= 1 mA  
C
iss  
I
D
C
oss  
100  
10  
COMMON SOURCE  
= 0 V  
V
GS  
C
rss  
f = 1 MHz  
Tc = 25°C  
0.1  
1
10  
100  
−80  
−40  
0
40  
80  
120  
160  
DRAIN−SOURCE VOLTAGE  
V
(V)  
CASE TEMPERATURE Tc (°C)  
DS  
DYNAMIC INPUT/OUTPUT  
CHARACTERISTICS  
P
− Tc  
D
600  
80  
15  
COMMON SOURCE  
= 13 A  
I
D
500  
400  
12.5  
10  
Tc = 25°C  
PULSE TEST  
60  
40  
20  
V
= 100V  
DD  
200V  
V
DS  
400V  
7.5  
300  
200  
V
GS  
5
100  
0
2.5  
0
0
0
0
20  
40  
60  
80  
40  
80  
120  
160  
200  
CASE TEMPERATURE Tc (°C)  
TOTAL GATE CHARGE  
Q
g
(nC)  
4
2005-05-30  
2SK4016  
r
th  
– t  
w
10  
1
Duty = 0.5  
0.2  
0.1  
0.1  
0.05  
P
DM  
0.02  
t
0.01  
0.01  
SINGLE PULSE  
T
Duty = t/T  
R
= 2.5°C/W  
th (ch-c)  
0.001  
10μ  
100ｍ  
10  
1ｍ  
10ｍ  
1
100μ  
PULSE WIDTH  
t
w
(s)  
E
– T  
ch  
AS  
SAFE OPERATING AREA  
1200  
1000  
100  
I
max (PULSED) *  
D
100 μs *  
I
max (CONTINUOUS) *  
D
800  
10  
1 ms *  
600  
400  
DC OPERATION  
Tc = 25°C  
1
200  
0
*SINGLE NONREPETITIVE  
PULSE Tc = 25°C  
25  
50  
75  
100  
125  
150  
0.1  
CURVES MUST BE  
Channel temperature (initial) Tch (°C)  
DERATED LINEARLY WITH  
INCREASE IN TEMPERATURE  
V
max  
DSS  
0.01  
10  
100  
1000  
1
B
VDSS  
15 V  
−15 V  
DRAIN−SOURCE VOLTAGE  
V
(V)  
DS  
I
AR  
V
V
DD  
DS  
B
Test circuit  
Waveform  
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
2
R
V
= 25 Ω  
VDSS  
G
E
=
⋅L⋅I ⋅  
AS  
−
V
DD  
= 90 V, L = 10.7 mH  
B
VDSS  
DD  
5
2005-05-30  
2SK4016  
RESTRICTIONS ON PRODUCT USE  
20070701-EN  
• The information contained herein is subject to change without notice.  
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
• The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
• The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
• The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
• Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
6
2005-05-30  
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