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2SK217ZEUL

型号：

2SK217ZEUL

品牌：

HITACHI[ HITACHI SEMICONDUCTOR ]

页数：

7 页

PDF大小：

38 K

下载PDF手册
2SK217  
Silicon N-Channel Junction FET  
Application  
VHF amplifier  
Outline  
MPAK  
3
1
1. Gate  
2. Drain  
3. Source  
2
2SK217  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VGDO  
ID  
Ratings  
–30  
Unit  
V
Gate to drain current  
Drain current  
20  
mA  
mA  
mW  
°C  
Gate current  
IG  
10  
Channel power dissipation  
Channel temperature  
Storage temperature  
Pch  
Tch  
Tstg  
150  
150  
–55 to +150  
°C  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test conditions  
Gate to drain breakdown  
voltage  
V(BR)GDO  
–30  
—
—
V
IG = –100 µA  
Gate cutoff current  
IGSS  
—
—
2.5  
—
—
—
–10  
–2.5  
12  
nA  
V
VGS = –0.5 V, VDS = 0  
Gate to source cutoff voltage  
Drain current  
VGS(off)  
—
VDS = 5 V, ID = 10 µA  
1
IDSS  
*
—
mA  
mS  
pF  
VDS = 5 V, VGS = 0  
Forward transfer admittance  
|yfs|  
8.0  
0.1  
—
VDS = 5 V, VGS = 0, f = 1 kHz  
VDS = 5 V, VGS = 0, f = 1 MHz  
Reverse transfer capacitance Crss  
—
Note: 1. The 2SK217 is grouped by IDSS as follows.  
Grade  
Mark  
IDSS  
C
D
E
ZC  
ZD  
ZE  
2.5 to 5  
4 to 8  
6 to 12  
2
2SK217  
Maximum Channel Power  
Dissipation Curve  
Typical Output Characteristics (1)  
VGS = 0  
10  
8
150  
100  
50  
–0.2 V  
6
–0.4  
4
–0.6  
30  
–0.8  
–1.0  
2
0
10  
20  
40  
50  
0
50  
100  
150  
Drain to Source Voltage VDS (V)  
Ambient Temperature Ta (°C)  
Typical Transfer Characteristics  
Typical Output Characteristics (2)  
VGS = 0  
15  
10  
5
10  
8
–0.2 V  
6
VDS = 5 V  
–0.4  
–0.6  
4
E
D
–0.8  
–1.0  
2
C
0
–3  
–2  
–1  
0
0
1
2
3
4
5
Gate to Source Voltage VGS (V)  
Drain to Source Voltage VDS (V)  
3
2SK217  
Forward Transfer Admittance vs.  
Drain Current  
Forward Transfer Admittance vs.  
Drain to Source Voltage  
50  
15  
10  
5
Ta = –25°C  
25  
75  
20  
10  
5
2
1.0  
0.5  
VDS = 5 V  
f = 1 kHz  
VGS = 0  
f = 1 kHz  
0.2  
0.5 1.0  
2
5
10  
20  
0
5
10  
15  
Drain Current ID (mA)  
Drain to Source Voltage VDS (V)  
Reverse Transfer Capacitance vs.  
Drain to Source Voltage  
Input Capacitance vs.  
Drain to Source Voltage  
5
20  
10  
5
VGS = 0  
f = 1 MHz  
2
1.0  
0.5  
VGS = 0  
f = 1 MHz  
0.2  
0.1  
0.05  
2
0.1 0.2  
0.5 1.0  
2
5
10  
0.1 0.2  
0.5 1.0  
2
5
10  
Drain to Source Voltage VDS (V)  
Drain to Source Voltage VDS (V)  
4
2SK217  
Power Gain vs.  
Drain to Source Voltage  
Output Capacitance vs.  
Drain to Source Voltage  
30  
20  
10  
200  
100  
50  
VGS = 0  
f = 1 MHz  
VGS = 0  
f = 100 MHz  
20  
10  
5
2
0.1 0.2  
0.5 1.0  
2
5
10  
0
5
10  
15  
Drain to Source Voltage VDS (V)  
Drain to Source Voltage VDS (V)  
Noise Figure vs.  
Drain to Source Voltage  
8
6
4
2
VGS = 0  
f = 100 MHz  
0
4
8
12  
16  
Drain to Source Voltage VDS (V)  
Power Gain and Noise Figure  
Test Circuit  
Shield  
5.4  
C1  
3.0  
4.700  
D.U.T.  
L2  
50  
L1 C2  
V.V  
SG Output  
Impedance  
50  
S.G.  
Unit R : Ω  
C : pF  
VDD  
C1, C2 : 0 to 30pF Variable Air  
1 : 3.5 T φ1 mm Copper Ribbon, Tin plated 10 mm Inside dia.  
L2 : 4.5 T φ1 mm Copper Ribbon, Tin plated 10 mm Inside dia.  
L
5
Unit: mm  
+ 0.10  
– 0.06  
+ 0.10  
– 0.05  
0.16  
3 – 0.4  
0 – 0.1  
0.95  
0.95  
1.9 ± 0.2  
2.95 ± 0.2  
Hitachi Code  
JEDEC  
MPAK  
—
EIAJ  
Conforms  
Weight (reference value) 0.011 g  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
: http:semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
Asia (Singapore)  
Asia (Taiwan)  
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm  
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm  
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe GmbH  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower, World Finance Centre,  
Harbour City, Canton Road, Tsim Sha Tsui,  
Kowloon, Hong Kong  
Tel: <852> (2) 735 9218  
Fax: <852> (2) 730 0281  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
Electronic components Group  
Dornacher Stra§e 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
179 East Tasman Drive,  
San Jose,CA 95134  
Tel: <1> (408) 433-1990  
Fax: <1>(408) 433-0223  
Fax: 535-1533  
Hitachi Asia Ltd.  
Taipei Branch Office  
3F, Hung Kuo Building. No.167,  
Tun-Hwa North Road, Taipei (105)  
Tel: <886> (2) 2718-3666  
Fax: <886> (2) 2718-8180  
Telex: 40815 HITEC HX  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 778322  
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.  
厂商 型号 描述 页数 下载

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ETC

 		2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス － 小信号FET － 接合形FET ] 3 页

ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

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 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

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PANASONIC

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