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2SK2684(L)

型号：

2SK2684(L)

品牌：

HITACHI[ HITACHI SEMICONDUCTOR ]

页数：

10 页

PDF大小：

53 K

下载PDF手册
2SK2684(L), 2SK2684(S)  
Silicon N Channel DV–L MOS FET  
High Speed Power Switching  
ADE-208-542  
1st. Edition  
Features  
•
Low on-resistance  
RDS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A)  
•
•
4V gate drive devices.  
High speed switching  
Outline  
LDPAK  
4
4
D
1
2
3
1
G
2
3
1. Gate  
2. Drain  
3. Source  
4. Drain  
S
2SK2684(L), 2SK2684(S)  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
30  
VGSS  
±20  
V
ID  
30  
A
1
Drain peak current  
ID(pulse)  
*
120  
A
Body to drain diode reverse drain current  
Channel dissipation  
Channel temperature  
Storage temperature  
IDR  
30  
A
Pch*2  
Tch  
50  
W
°C  
°C  
150  
Tstg  
–55 to +150  
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %  
2. Value at Tc = 25°C  
2
2SK2684(L), 2SK2684(S)  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol  
Min  
Typ  
Max  
Unit  
Test Conditions  
Drain to source breakdown  
voltage  
V(BR)DSS  
30  
—
—
V
ID = 10mA, VGS = 0  
Gate to source breakdown  
voltage  
V(BR)GSS  
IDSS  
±20  
—
—
—
V
IG = ±100µA, VDS = 0  
Zero gate voltege drain  
current  
—
10  
µA  
VDS = 30 V, VGS = 0  
Gate to source leak current  
IGSS  
—
1.0  
—
—
12  
—
—
—
—
—
—
—
—
—
±10  
2.0  
28  
50  
—
—
—
—
—
—
—
—
—
µA  
V
VGS = ±16V, VDS = 0  
ID = 1mA, VDS = 10V  
ID = 15A, VGS = 10V*1  
ID = 15A, VGS = 4V*1  
ID = 15A, VDS = 10V*1  
VDS = 10V  
Gate to source cutoff voltage VGS(off)  
Static drain to source on state RDS(on)  
—
20  
mΩ  
mΩ  
S
resistance  
RDS(on)  
35  
Forward transfer admittance |yfs|  
18  
Input capacitance  
Output capacitance  
Ciss  
750  
520  
210  
16  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
Coss  
VGS = 0  
Reverse transfer capacitance Crss  
f = 1MHz  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
VGS = 10V, ID = 15A  
RL = 0.67Ω  
260  
85  
Turn-off delay time  
Fall time  
90  
Body to drain diode forward  
voltage  
VDF  
1.0  
IF = 30A, VGS = 0  
Body to drain diode reverse  
recovery time  
trr  
—
45  
—
ns  
IF = 30A, VGS = 0  
diF/ dt = 50A/µs  
Note: 1. Pulse test  
3
2SK2684(L), 2SK2684(S)  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
500  
100  
75  
200  
100  
10 µs  
50  
20  
50  
10  
5
Operation in  
this area is  
limited by R  
25  
2
1
DS(on)  
Ta = 25 °C  
0.5  
0
3
30  
50  
100  
150  
200  
0.1 0.3  
1
10  
100  
Drain to Source Voltage  
V
(V)  
DS  
Case Temperature Tc (°C)  
Typical Transfer Characteristics  
Typical Output Characteristics  
50  
40  
30  
20  
10  
50  
40  
30  
20  
10  
Pulse Test  
4.5 V  
10 V  
6 V  
5 V  
25°C  
–25°C  
Tc = 75°C  
4 V  
3.5 V  
= 3 V  
V
6
GS  
V
= 10 V  
DS  
Pulse Test  
0
0
2
4
6
8
GS  
10  
2
4
8
10  
Gate to Source Voltage  
V
(V)  
Drain to Source Voltage  
V
(V)  
DS  
4
2SK2684(L), 2SK2684(S)  
Drain to Source Saturation Voltage vs.  
Gate to Source Voltage  
Static Drain to Source on State Resistance  
vs. Drain Current  
500  
1.0  
0.8  
0.6  
0.4  
0.2  
Pulse Test  
Pulse Test  
200  
100  
50  
V
GS  
= 4 V  
10 V  
I
= 20 A  
D
20  
10  
5
10 A  
5 A  
12  
Gate to Source Voltage  
0
4
8
16  
20  
1
2
5
10 20  
50 100  
(A)  
V
(V)  
GS  
Drain Current  
I
D
Forward Transfer Admittance vs.  
Drain Current  
Static Drain to Source on State Resistance  
vs. Temperature  
100  
30  
100  
Pulse Test  
Tc = –25 °C  
80  
60  
40  
20  
10  
25 °C  
75 °C  
I
= 20 A  
5, 10 A  
D
V
= 4 V  
GS  
3
1
5, 10, 20 A  
0.3  
0.1  
V
= 10 V  
DS  
10 V  
Pulse Test  
0
–40  
0
40  
80  
120 160  
0.1 0.3  
1
3
10  
D
30  
(A)  
100  
Case Temperature Tc (°C)  
Drain Current I  
5
2SK2684(L), 2SK2684(S)  
Body to Drain Diode Reverse  
Typical Capacitance vs.  
Drain to Source Voltage  
Recovery Time  
10000  
5000  
1000  
V
GS  
= 0  
f = 1 MHz  
300  
100  
2000  
1000  
500  
30  
10  
Ciss  
Coss  
3
200  
100  
di / dt = 50 A / µs  
V
= 0, Ta = 25 °C  
Crss  
GS  
1
0.1 0.3  
1
3
10  
30  
(A)  
100  
0
10  
20  
30  
40  
50  
Reverse Drain Current  
I
DR  
Drain to Source Voltage V  
(V)  
DS  
Dynamic Input Characteristics  
= 30 A  
Switching Characteristics  
50  
40  
30  
20  
10  
20  
1000  
I
D
300  
100  
16  
12  
8
V
= 5 V  
10 V  
25 V  
DD  
t
f
t
V
t
d(off)  
DS  
r
30  
10  
V
GS  
t
d(on)  
4
0
V
= 25 V  
10 V  
5 V  
3
1
DD  
V
= 10 V, V  
= 10 V  
DD  
GS  
PW = 5 µs, duty < 1 %  
0
8
16  
24  
32  
40  
0.1 0.3  
1
3
10  
30  
100  
Gate Charge Qg (nc)  
Drain Current  
I
(A)  
D
6
2SK2684(L), 2SK2684(S)  
Reverse Drain Current vs.  
Source to Drain Voltage  
50  
40  
30  
20  
10  
10 V  
V
= 0, –5 V  
GS  
5 V  
Pulse Test  
1.6 2.0  
0
0.4  
0.8  
1.2  
Source to Drain Voltage  
V
(V)  
SD  
Normalized Transient Thermal Impedance vs. Pulse Width  
3
1
Tc = 25°C  
D = 1  
0.5  
0.3  
0.1  
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c  
ch – c = 2.5 °C/W, Tc = 25 °C  
PW  
T
P
DM  
D =  
0.03  
0.01  
PW  
T
10 µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
Pulse Width PW (S)  
7
2SK2684(L), 2SK2684(S)  
Switching Time Test Circuit  
Waveform  
Vout  
Monitor  
Vin Monitor  
D.U.T.  
90%  
R
L
10%  
10%  
90%  
Vin  
V
DD  
Vin  
10 V  
Vout  
10%  
50Ω  
= 10 V  
90%  
td(off)  
td(on)  
t
f
tr  
8
2SK2684(L), 2SK2684(S)  
Package Dimensions  
Unit: mm  
4.44 ± 0.2  
10.2 ± 0.3  
1.3 ± 0.2  
4.44 ± 0.2  
1.3 ± 0.2  
10.2 ± 0.3  
2.59 ± 0.2  
1.27 ± 0.2  
0.76 ± 0.1  
1.2 ± 0.2  
+0.2  
0.86  
–0.1  
+0.2  
–0.1  
0.1  
2.59 ± 0.2  
1.27 ± 0.2  
0.4 ± 0.1  
+0.2  
–0.1  
1.2 ± 0.2  
0.4 ± 0.1  
0.86  
2.54 ± 0.5  
2.54 ± 0.5  
2.54 ± 0.5  
2.54 ± 0.5  
L type  
S type  
LDPAK  
—
Hitachi Code  
EIAJ  
—
JEDEC  
9
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
: http:semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
Asia (Singapore)  
Asia (Taiwan)  
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm  
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm  
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe GmbH  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower, World Finance Centre,  
Harbour City, Canton Road, Tsim Sha Tsui,  
Kowloon, Hong Kong  
Tel: <852> (2) 735 9218  
Fax: <852> (2) 730 0281  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
Electronic components Group  
Dornacher Stra§e 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
179 East Tasman Drive,  
San Jose,CA 95134  
Tel: <1> (408) 433-1990  
Fax: <1>(408) 433-0223  
Fax: 535-1533  
Hitachi Asia Ltd.  
Taipei Branch Office  
3F, Hung Kuo Building. No.167,  
Tun-Hwa North Road, Taipei (105)  
Tel: <886> (2) 2718-3666  
Fax: <886> (2) 2718-8180  
Telex: 40815 HITEC HX  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 778322  
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.  
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