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2SK3105-A

型号：

2SK3105-A

品牌：

NEC[ NEC ]

页数：

8 页

PDF大小：

64 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3105  
N-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit : mm)  
The 2SK3105 is a switching device which can be driven  
directly by a 4 V power source.  
+0.1  
–0.05  
0.4  
+0.1  
–0.06  
0.16  
The 2SK3105 features a low on-state resistance and excellent  
switching characteristics, and is suitable for applications such  
as power switch of portable machine and so on.  
3
0 to 0.1  
FEATURES  
1
2
• Can be driven by a 4 V power source  
• Low on-state resistance  
0.65  
0.95 0.95  
1.9  
DS(on)1  
R
DS(on)2  
R
DS(on)3  
R
GS  
D
= 95 mΩ MAX. (V = 10 V, I = 1.5 A)  
GS  
D
= 135 mΩ MAX. (V = 4.5 V, I = 1.5 A)  
0.9 to 1.1  
2.9 ±0.2  
GS  
D
= 150 mΩ MAX. (V = 4.0 V, I = 1.5 A)  
1
: Gate  
ORDERING INFORMATION  
PART NUMBER  
2 : Source  
3 : Drain  
PACKAGE  
EQUIVALENT CIRCUIT  
2SK3105  
3-pin Mini Mold (Thin Type)  
Drain  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Body  
Diode  
DSS  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
Drain Current (pulse) Note1  
Total Power Dissipation  
Total Power Dissipation Note2  
Channel Temperature  
Storage Temperature  
V
V
30  
V
V
Gate  
GSS  
±20  
±2.5  
±10  
0.2  
D(DC)  
I
A
Gate  
Protection  
Diode  
D(pulse)  
I
A
Source  
T1  
P
W
W
°C  
Marking: XA  
T2  
P
1.25  
150  
ch  
T
stg  
T
–55 to +150 °C  
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %  
2. Mounted on FR4 Board, t ≤ 5 sec.  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published June 1999 NS CP(K)  
Printed in Japan  
D13293EJ1V0DS00 (1st edition)  
1998, 1999  
©
2SK3105  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTICS  
Drain Cut-off Current  
SYMBOL  
IDSS  
TEST CONDITIONS  
VDS = 30 V, VGS = 0 V  
MIN. TYP. MAX. UNIT  
–10  
±10  
2.5  
µA  
µA  
V
Gate Leakage Current  
IGSS  
VGS = ±16 V, VDS = 0 V  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 1.5 A  
VGS = 10 V, ID = 1.5 A  
VGS = 4.5 V, ID = 1.5 A  
VGS = 4.0 V, ID = 1.5 A  
VDS = 10 V  
Gate Cut-off Voltage  
VGS(off)  
| yfs |  
RDS(on)1  
RDS(on)2  
RDS(on)3  
Ciss  
1.0  
1
1.6  
3.5  
56  
Forward Transfer Admittance  
Drain to Source On-state Resistance  
S
95  
mΩ  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
82  
135  
150  
91  
Input Capacitance  
211  
95  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
Coss  
VGS = 0 V  
Crss  
f = 1 MHz  
42  
td(on)  
tr  
td(off)  
tf  
VDD = 10 V  
12  
ID = 1.0 A  
44  
ns  
Turn-off Delay Time  
Fall Time  
VGS(on) = 10 V  
28  
ns  
RG = 10 Ω  
15  
ns  
Total Gate Charge  
Gate to Source Charge  
Gate to Drain Charge  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QG  
VDS = 10 V  
2.1  
0.61  
0.84  
0.81  
15  
nC  
nC  
nC  
V
QGS  
ID = 2.5 A  
QGD  
VF(S-D)  
trr  
VGS = 4.0 V  
IF = 2.5 A, VGS = 0 V  
IF = 2.5 A, VGS = 0 V  
di/dt = 90 A/µs  
ns  
Qrr  
3.7  
nC  
TEST CIRCUIT 1 SWITCHING TIME  
TEST CIRCUIT 2 GATE CHARGE  
D.U.T.  
D.U.T.  
I
G
= 2 mA  
V
GS  
R
L
R
L
90 %  
V
GS  
Wave Form  
VGS(on)  
10 %  
0
R
G
PG.  
PG.  
VDD  
VDD  
50 Ω  
R = 10 Ω  
G
90 %  
I
D
90 %  
10 %  
I
D
V
0
GS  
10 %  
I
D
0
Wave Form  
t
r
t
d(on)  
td(off)  
t
f
τ
t
on  
toff  
τ = 1µ s  
Duty Cycle ≤ 1 %  
2
Data Sheet D13293EJ1V0DS00  
2SK3105  
TYPICAL CHARACTERISTICS (TA = 25°C)  
FORWARD BIAS SAFE OPERATING AREA  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
100  
10  
1
100  
ID (pulse)  
80  
V)  
Limited  
10  
=
RDS(on)  
(@V  
GS  
ID (DC)  
60  
40  
20  
0.1  
Single Pulse  
Mounted on FR-4 Board of  
50mm x 50mm x 1.6mm  
0.01  
0
30  
60  
90  
120  
150  
0.1  
1
10  
100  
T
A - Ambient Temperature - ˚C  
V
DS - Drain to Source Voltage - V  
TRANSFER CHARACTERISTICS  
DS = 10 V  
GATE TO SOURCE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
10  
V
2.0  
V
DS = 10 V  
I
D
= 1 mA  
1
0.1  
1.8  
1.6  
1.4  
1.2  
TA  
= 125˚C  
75˚C  
25˚C  
0.01  
−25˚C  
0.001  
0.0001  
1.0  
0.00001  
2
0
1
3
4
5
150  
−50  
0
50  
100  
T
ch - Channel Temperature - ˚C  
VGS - Gate to Sorce Voltage - V  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
DRAIN CURRENT  
FORWARD TRANSFER ADMMITTANCE Vs.  
DRAIN CURRENT  
100  
10  
1
150  
V
DS = 10V  
V
GS = 4.0 V  
T
A
= 125˚C  
T
A
= −25 ˚C  
25 ˚C  
75˚C  
25˚C  
75 ˚C  
100  
125 ˚C  
0.1  
−25˚C  
0.01  
50  
0.01  
0.1  
10  
0.01  
1
1
10  
0.1  
ID - Drain Current - A  
ID  
- Drain Current - A  
3
Data Sheet D13293EJ1V0DS00  
2SK3105  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
DRAIN CURRENT  
150  
100  
V
GS = 4.5 V  
VGS = 10 V  
T
A
= 125˚C  
75˚C  
25˚C  
T
A
= 125˚C  
75˚C  
25˚C  
100  
50  
−25˚C  
−25˚C  
50  
0.01  
0
0.01  
1
10  
1
10  
0.1  
0.1  
ID  
- Drain Current - A  
ID  
- Drain Current - A  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
150  
200  
ID = 1.5 A  
ID = 1.5 A  
VGS = 4.0 V  
150  
4.5 V  
100  
50  
0
10 V  
100  
50  
0
4
0
8
12  
16  
20  
−50  
0
50  
100  
150  
VGS - Gate to Source Voltage - V  
T
ch - Channel Temperature -˚C  
SWITCHING CHARACTERISTICS  
tr  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
100  
10  
1
1000  
f = 1MHz  
V
GS = 0V  
td(off)  
Ciss  
tf  
td(on)  
100  
C
oss  
rss  
C
V
DD = 10V  
on) = 10V  
= 10Ω  
V
GS  
(
R
G
10  
1
10  
DS - Drain to Source Voltage - V  
100  
1
0.1  
10  
I
D
- Drain Current - A  
V
4
Data Sheet D13293EJ1V0DS00  
2SK3105  
SOURCE TO DRAIN DIODE FORWARD VOLTAGE  
10  
DYNAMIC INPUT CHARACTERISTICS  
ID = 2.5 A  
10  
8
VDD = 10 V  
6.0 V  
1
6
4
2
0
0.1  
0.01  
0.4  
0.6  
F(S-D) - Source to Drain Voltage - V  
0.8  
1.0  
1.2  
0
1
2
3
4
5
Qg - Gate Charge - nC  
V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
Without Board  
1000  
100  
Single Pulse  
2
µ
Mounted on 250 mm x 35  
m
Copper Pad  
Connected to Drain Electrode  
in 50 mm x 50 mm x 1.6 mm  
FR-4 Board  
10  
1
0.001  
0.01  
0.1  
1
10  
100  
1000  
PW - Pulse Width - S  
5
Data Sheet D13293EJ1V0DS00  
2SK3105  
[MEMO]  
6
Data Sheet D13293EJ1V0DS00  
2SK3105  
[MEMO]  
7
Data Sheet D13293EJ1V0DS00  
2SK3105  
• The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
• No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in  
this document.  
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property  
rights of third parties by or arising from use of a device described herein or any other liability arising from use  
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other  
intellectual property rights of NEC Corporation or others.  
• Descriptions of circuits, software, and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these circuits,  
software, and information in the design of the customer's equipment shall be done under the full responsibility  
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third  
parties arising from the use of these circuits, software, and information.  
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
• NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a  
customer designated "quality assurance program" for a specific application. The recommended applications of  
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device  
before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
M7 98. 8  
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