Silicon Junction FETs (Small Signal)
2SK662
Silicon N-Channel Junction FET
For low-frequency amplification
unit: mm
2.1±0.1
■ Features
0.425
1.25±0.1
0.425
● High mutual conductance gm
● Low noise type
1
● S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
3
2
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Drain current
Symbol
VDSX
VGDO
ID
Ratings
Unit
V
30
−30
V
0.2±0.1
20
mA
mA
mW
°C
Gate current
IG
10
1: Source
2: Drain
3: Gate
Allowable power dissipation
Junction temperature
Storage temperature
PD
150
EIAJ: SC-70
S-Mini Type Package (3-pin)
Tj
125
Tstg
−55 to +125
°C
Marking Symbol (Example): 1O
■ Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
12
Unit
mA
nA
V
*
Drain to Source cut-off current
Gate to Source leakage current
Gate to Source cut-off voltage
IDSS
VDS = 10V, VGS = 0
0.5
IGSS
VGS = −30V, VDS = 0
−100
−1.5
VGSC
VDS = 10V, ID = 10µA
− 0.1
VDS = 10V, ID = 0.5mA, f = 1kHz
4
4
Mutual conductance
gm
mS
VDS = 10V, VGS = 0, f = 1kHz
Input capacitance (Common Source) Ciss
14
pF
pF
VDS = 10V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
3.5
VDS = 30V, ID = 1mA, GV = 80dB
Noise figure
NV
60
mV
Rg = 100kΩ, Function = FLAT
* IDSS rank classification
Runk
P
Q
R
IDSS (mA)
0.5 to 3
1OP
2 to 6
1OQ
4 to 12
1OR
Marking Symbol
1
