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2SK3289

型号：

2SK3289

描述：

硅N沟道MOS场效应管高速开关[ Silicon N Channel MOS FET High Speed Switching ]

品牌：

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数：

7 页

PDF大小：

44 K

下载PDF手册
To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and  
corporate statement, no changes whatsoever have been made to the contents of the document, and  
these changes do not constitute any alteration to the contents of the document itself.  
Renesas Technology Home Page: http://www.renesas.com  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  
Cautions  
Keep safety first in your circuit designs!  
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better  
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with  
semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate  
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or  
(iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas  
Technology Corporation product best suited to the customer's application; they do not convey any  
license under any intellectual property rights, or any other rights, belonging to Renesas Technology  
Corporation or a third party.  
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any  
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or  
circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and  
algorithms represents information on products at the time of publication of these materials, and are  
subject to change by Renesas Technology Corporation without notice due to product improvements or  
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation  
or an authorized Renesas Technology Corporation product distributor for the latest product information  
before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss  
rising from these inaccuracies or errors.  
Please also pay attention to information published by Renesas Technology Corporation by various  
means, including the Renesas Technology Corporation Semiconductor home page  
(http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including product data, diagrams,  
charts, programs, and algorithms, please be sure to evaluate all information as a total system before  
making a final decision on the applicability of the information and products. Renesas Technology  
Corporation assumes no responsibility for any damage, liability or other loss resulting from the  
information contained herein.  
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device  
or system that is used under circumstances in which human life is potentially at stake. Please contact  
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor  
when considering the use of a product contained herein for any specific purposes, such as apparatus or  
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.  
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in  
whole or in part these materials.  
7. If these products or technologies are subject to the Japanese export control restrictions, they must be  
exported under a license from the Japanese government and cannot be imported into a country other  
than the approved destination.  
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the  
country of destination is prohibited.  
8. Please contact Renesas Technology Corporation for further details on these materials or the products  
contained therein.  
2SK3289  
Silicon N Channel MOS FET  
High Speed Switching  
ADE-208-743B(Z)  
Target Specification 3rd.Edition.  
December 1998  
Features  
•
Low on-resistance  
RDS = 1.26Ω typ. (at VGS =10V , ID =150mA)  
RDS = 2.8Ω typ. (at VGS =4V , ID =50mA)  
4V gate drive device  
•
•
Small package (CMPAK)  
Outline  
CMPAK  
3
1
D
2
G
1. Source  
2. Gate  
3. Drain  
S
2SK3289  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
30  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
VGSS  
ID  
±20  
V
300  
mA  
A
Note1  
Drain peak current  
ID(pulse)  
1.2  
Body-drain diode reverse drain current IDR  
300  
mA  
mW  
°C  
°C  
Channel dissipation  
Pch Note 2  
400  
Channel temperature  
Tch  
150  
Storage temperature  
Tstg  
–55 to +150  
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %  
2. Value on the alumina ceramic board (12.5x20x0.7mm)  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test Conditions  
Drain to source breakdown  
voltage  
V(BR)DSS  
V(BR)GSS  
IGSS  
30  
—
—
V
ID = 100µA, VGS = 0  
Gate to source breakdown  
voltage  
±20  
—
—
V
IG = ±100µA, VDS = 0  
Gate to source leak current  
—
—
1.3  
—
—
145  
—
—
—
—
—
—
—
—
±5  
1
µA  
µA  
V
VGS = ±16V, VDS = 0  
VDS = 30 V, VGS = 0  
ID = 10µA, VDS = 5V  
ID = 150mA,VGS = 10V Note 3  
ID = 50mA,VGS = 4VNote 3  
ID = 150mA, VDS = 10V Note 3  
VDS = 10V  
Zero gate voltege drain current IDSS  
—
Gate to source cutoff voltage  
VGS(off)  
—
2.3  
1.44  
3.44  
—
Static drain to source on state RDS(on)  
1.26  
2.8  
220  
4
Ω
resistance  
RDS(on)  
|yfs|  
Ciss  
Coss  
Crss  
td(on)  
tr  
Ω
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
mS  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
—
15  
—
VGS = 0  
2
—
f = 1MHz  
200  
600  
1100  
1100  
—
ID = 150mA, VGS = 10V  
RL = 66.6Ω  
—
Turn-off delay time  
Fall time  
td(off)  
tf  
—
—
Note: 3. Pulse test  
4. Marking is “ AN ”  
2
2SK3289  
Main Characteristics  
Power vs. Temperature Derating  
400  
300  
200  
100  
0
50  
100  
150  
200  
Case Temperature Tc (°C)  
3
2SK3289  
Package Dimensions  
As of January, 2001  
Unit: mm  
2.0 ± 0.2  
+ 0.1  
+ 0.1  
0.16  
0.3  
0.3  
– 0.06  
– 0.05  
0 – 0.1  
+ 0.1  
– 0.05  
+ 0.1  
– 0.05  
0.3  
0.65  
0.65  
1.3 ± 0.2  
Hitachi Code  
JEDEC  
CMPAK  
—
EIAJ  
Conforms  
0.006 g  
Mass (reference value)  
4
2SK3289  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
Asia  
: http://semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
: http://sicapac.hitachi-asia.com  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
179 East Tasman Drive, Dornacher Straβe 3  
Hitachi Europe GmbH  
Electronic Components Group  
Hitachi Asia Ltd.  
Hitachi Tower  
16 Collyer Quay #20-00,  
Singapore 049318  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower,  
San Jose,CA 95134  
D-85622 Feldkirchen, Munich  
World Finance Centre,  
Tel: <1> (408) 433-1990 Germany  
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Tel : <65>-538-6533/538-8577  
Fax : <65>-538-6933/538-3877  
URL : http://www.hitachi.com.sg  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon,  
Hong Kong  
Tel : <852>-(2)-735-9218  
Fax : <852>-(2)-730-0281  
URL : http://www.hitachi.com.hk  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road,  
Hung-Kuo Building,  
Taipei (105), Taiwan  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 585160  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
URL : http://www.hitachi.com.tw  
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.  
Colophon 2.0  
5
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ETC

 		2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス － 小信号FET － 接合形FET ] 3 页

ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

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PANASONIC

 		2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

 		2SK0198(2SK198) 2SK0198 （ 2SK198 ） - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

 		2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

 		2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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