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IXTT16N20D2

型号：

IXTT16N20D2

描述：

耗尽型MOSFET[ Depletion Mode MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

178 K

下载PDF手册
Preliminary Technical Information  
Depletion Mode  
MOSFET  
VDSX = 200V  
ID(on) > 16A  
IXTH16N20D2  
IXTT16N20D2  
RDS(on)  
≤
73mΩ  
N-Channel  
TO-247 (IXTH)  
G
D
S
D (Tab)  
Symbol  
VDSX  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
200  
200  
V
V
VDGX  
VGSX  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
TO-268 (IXTT)  
PD  
TC = 25°C  
695  
W
G
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
S
D (Tab)  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-247  
TO-268  
6
4
g
g
Features  
• Normally ON Mode  
• International Standard Packages  
• Molding Epoxies Meet UL94V-0  
Flammability Classification  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
• Easy to Mount  
• Space Savings  
• High Power Density  
BVDSX  
VGS(off)  
IGSX  
VGS = - 5V, ID = 250μA  
VDS = 25V, ID = 4mA  
VGS = ±20V, VDS = 0V  
VDS = VDSX, VGS = - 5V  
200  
V
V
- 2.0  
- 4.0  
Applications  
±100 nA  
μA  
100 μA  
73 mΩ  
A
• Audio Amplifiers  
• Start-up Circuits  
• Protection Circuits  
• Ramp Generators  
• Current Regulators  
• Active Loads  
IDSX(off)  
5
TJ = 125°C  
RDS(on)  
ID(on)  
VGS = 0V, ID = 8A, Note 1  
VGS = 0V, VDS = 25V, Note 1  
16  
DS100260A(08/12)  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXTH16N20D2  
IXTT16N20D2  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 8A, Note 1  
7
12  
S
Ciss  
Coss  
Crss  
5500  
1360  
607  
pF  
pF  
pF  
∅ P  
VGS = -10V, VDS = 25V, f = 1MHz  
1
2
3
td(on)  
tr  
td(off)  
tf  
46  
130  
270  
135  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = + 5V, VDS = 100V, ID = 8A  
e
RG = 3.3Ω (External)  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Qg(on)  
Qgs  
208  
28  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS = + 5V, VDS = 100V, ID = 8A  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
110  
RthJC  
RthCS  
0.18 °C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Safe-Operating-Area Specification  
Characteristic Values  
Min. Typ. Max.  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Symbol  
SOA  
Test Conditions  
.780 .800  
.177  
VDS = 200V, ID = 2.1A, TC = 75°C, tp = 5s  
420  
W
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Source-Drain Diode  
TO-268 Outline  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VSD  
IF = 16A, VGS = -10V, Note 1  
0.8  
1.3  
V
trr  
IRM  
QRM  
265  
14.3  
1.9  
ns  
A
μC  
IF = 8A, -di/dt = 100A/μs  
VR = 100V, VGS = -10V  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTH16N20D2  
IXTT16N20D2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
16  
14  
12  
10  
8
200  
180  
160  
140  
120  
100  
80  
VGS = 5V  
1.5V  
VGS = 5V  
4V  
3V  
2V  
1V  
0V  
1V  
2V  
6
1V  
60  
4
-1V  
40  
0V  
2
20  
-2V  
- 1V  
-2V  
- 3V  
0
0
0
5
10  
15  
20  
25  
30  
35  
0
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
1.2  
50  
VDS - Volts  
VDS - Volts  
Fig. 4. Drain Current @ TJ = 25ºC  
Fig. 3. Output Characteristics @ TJ = 125ºC  
36  
32  
28  
24  
20  
16  
12  
8
16  
14  
12  
10  
8
VGS = 5V  
4V  
3V  
2V  
1V  
VGS = 0V  
- 0.4V  
0V  
- 0.8V  
6
-1V  
- 1.2V  
- 1.6V  
4
-2V  
-3V  
2
4
- 2.0V  
- 2.4V  
0
0
0.2  
0.4  
0.6  
0.8  
1
0
10  
20  
30  
40  
50  
VDS - Volts  
VDS - Volts  
Fig. 6. Dynamic Resistance vs. Gate Voltage  
Fig. 5. Drain Current @ TJ = 100ºC  
1.E+10  
1.E+09  
1.E+08  
1.E+07  
1.E+06  
1.E+05  
1.E+04  
1.E+03  
1.E+02  
1.E+01  
40  
36  
32  
28  
24  
20  
16  
12  
8
VGS = 0V  
V
DS = 50V - 25V  
∆
- 0.4V  
- 0.8V  
TJ = 25ºC  
TJ = 100ºC  
- 1.2V  
- 1.6V  
4
- 2.0V  
- 2.4V  
0
10  
20  
30  
40  
-5  
-4  
-3  
-2  
-1  
0
VGS - Volts  
VDS - Volts  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXTH16N20D2  
IXTT16N20D2  
Fig. 8. RDS(on) Normalized to ID = 8A Value  
Fig. 7. Normalized RDS(on) vs. Junction Temperature  
vs. Drain Current  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 0V  
VGS = 0V  
5V  
I
= 8A  
- - - -  
D
TJ = 125ºC  
TJ = 25ºC  
0
5
10  
15  
20  
25  
30  
35  
40  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 10. Transconductance  
Fig. 9. Input Admittance  
30  
25  
20  
15  
10  
5
50  
40  
30  
20  
10  
0
VDS = 20V  
VDS = 20V  
TJ = - 40ºC, 25ºC, 125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
-4.0  
-3.5  
-3.0  
-2.5  
-2.0  
-1.5  
-1.0  
-0.5  
0.0  
0.5  
1.0  
VGS - Volts  
ID - Amperes  
Fig. 11. Normalized Breakdown and Threshold  
Voltages vs. Junction Temperature  
Fig. 12. Forward Voltage Drop of Intrinsic Diode  
30  
25  
20  
15  
10  
5
1.3  
VGS = -10V  
1.2  
1.1  
1.0  
0.9  
0.8  
VGS(off) @ VDS = 25V  
BVDSX @ VGS = - 5V  
TJ = 125ºC  
TJ = 25ºC  
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VSD - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTH16N20D2  
IXTT16N20D2  
Fig. 13. Capacitance  
Fig. 14. Gate Charge  
5
4
100,000  
10,000  
1,000  
100  
VDS = 100V  
= 1 MHz  
f
I
I
D = 8A  
3
G = 10mA  
2
C
C
iss  
1
0
-1  
-2  
-3  
-4  
-5  
oss  
C
rss  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
QG - NanoCoulombs  
Fig. 15. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
Fig. 16. Forward-Bias Safe Operating Area  
@ TC = 75ºC  
1,000  
100  
10  
1,000  
100  
10  
T
T
= 150ºC  
= 25ºC  
J
T
T
= 150ºC  
= 75ºC  
J
C
C
Single Pulse  
Single Pulse  
R
DS(on)  
Limit  
25µs  
R
DS(on)  
Limit  
25µs  
100µs  
100µs  
1ms  
1ms  
10ms  
100ms  
10ms  
DC  
100ms  
DC  
1
1001110  
1
10  
1,000  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 17. Maximum Transient Thermal Impedance  
hvjv  
0.300  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_16N20D2(8C)4-08-10  
Mouser Electronics  
Authorized Distributor  
Click to View Pricing, Inventory, Delivery & Lifecycle Information:  
IXYS:  
IXTT16N20D2  
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