SMMD Tyype
TransistIoCrs
Product specification
2SK3640
TO-252
Unit: mm
+0.15
-0.15
+0.1
2.30
-0.1
6.50
Features
+0.2
5.30
-0.2
+0.8
0.50
-0.7
Low on-state resistance
RDS(on)1 = 21 m MAX. (VGS = 10 V, ID = 9 A)
RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 9 A)
0.127
max
+0.1
0.80
-0.1
Low Ciss: Ciss = 570 pF TYP.
Built-in gate protection diode
+0.1
0.60
-0.1
1. Gate
2.3
4.60
+0.15
-0.15
2. Drain
3. Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current(DC)
Symbol
VDSS
VGSS
ID(DS)
ID(pulse)
PT
Rating
Unit
V
30
V
16
A
19
Drain Current(pulse) *1
A
76
20
W
W
Total Power Dissipation (TC = 25
Total Power Dissipation
)
PT
1
150
Channel Temperature
Tch
Storage temperature
Tstg
-55 to +150
10
Single Avalanche Current *2
Single Avalanche Energy *2
IAS
A
EAS
10
mJ
*1PW
10 s, Duty Cycle
1%
*2. Starting Tch = 25 , VDD = 15 V, RG = 25 , VGS = 20
0 V, L = 100
H
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