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2SK3636

型号:

2SK3636

描述:

雪崩能量容量保证: EAS 20兆焦耳高速开关: TF = 50纳秒[ Avalanche energy capacity guaranteed: EAS 20 mJ High-speed switching: tf = 50 ns ]

品牌:

TYSEMI[ TY Semiconductor Co., Ltd ]

页数:

2 页

PDF大小:

217 K

TransistIoCrs  
Product specification  
2SK3636  
TO-263  
Unit: mm  
Features  
+0.2  
4.57  
-0.2  
+0.1  
1.27  
-0.1  
Avalanche energy capacity guaranteed: EAS  
20 mJ  
Gate-source surrender voltage VGSS = 30 V guaranteed  
High-speed switching: tf = 50 ns  
No secondary breakdown  
+0.1  
1.27  
-0.1  
0.1max  
+0.1  
0.81  
-0.1  
2.54  
1 Gate  
+0.2  
2.54  
-0.2  
+0.1  
5.08  
-0.1  
+0.2  
0.4  
-0.2  
2 Drain  
3 Source  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain-source surrender voltage  
Gate-source surrender voltage  
Drain current  
Symbol  
Rating  
Unit  
V
VDSS  
VGSS  
ID  
800  
V
30  
A
3
Peak drain current  
IDP  
A
6
Avalanche energy capability  
Power dissipation Ta = 25  
Power dissipation  
EAS  
20  
mJ  
2
35  
PD  
W
Channel temperature  
Tch  
150  
Storage temperature  
Tstg  
-55 to +150  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 2  
4008-318-123  
TransistIoCrs  
Product specification  
2SK3636  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
VDSS  
IDSS  
IGSS  
Vth  
Testconditons  
ID = 1 mA, VGS = 0  
Min  
800  
Typ  
Max  
Unit  
V
Gate-drain surrender voltage  
Drain-source cutoff current  
Gate-source cutoff currentt  
Gate threshold voltage  
Forward transfer admittance *  
Drain-source on resistance *  
Diode forward voltage *  
Short-circuit forward transfer capacitance  
Short-circuit output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
VDS = 640 V, VGS = 0  
VGS = 30 V, VDS = 0  
VDS = 25 V, ID = 1 mA  
VDS = 25 V, ID = 2 mA  
100  
1
ìA  
ìA  
V
2.0  
1.5  
5.0  
2.4  
3.2  
V
Yfs  
RDS(on) VGS = 10 V, ID = 2 mA  
4.0  
Ù
VDSF  
Ciss  
IDR = 3 A, VGS = 0  
-1.6  
V
VDS = 10 V, VGS = 0, f = 1 MHz  
730  
90  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
/W  
/W  
Coss  
Crss  
40  
td(on)  
tr  
35  
Rise time  
60  
VDD = 200 V, ID = 2 A, RL = 100 Ù,VGS  
= 10 V  
Fall time  
tf  
50  
Turn-off delay time  
td(off)  
Rth(ch-c)  
Rth(ch-a)  
160  
Thermal resistance (ch-c)  
Thermal resistance (ch-a)  
* Pulse measurement  
3.6  
62.5  
http://www.twtysemi.com  
sales@twtysemi.com  
2 of 2  
4008-318-123  
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