S
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IC
Product specification
2SK3507
TO-252
Features
Unit: mm
+0.15
-0.15
+0.1
2.30
-0.1
6.50
4.5 V drive available
+0.2
5.30
-0.2
+0.8
0.50
-0.7
Low on-state resistance
RDS(on)1 = 45 m MAX. (VGS = 10 V, ID = 11 A)
Low gate charge
0.127
max
+0.1
0.80
-0.1
QG = 8.5 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 22 A)
Built-in G-S protection diode
+0.1
0.60
-0.1
2.3
4.60
1 Gate
Surface mount package available
+0.15
-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
30
Gate to source voltage
V
16
A
22
Drain current
Idp *
A
45
20
Power dissipation
TC=25
TA=25
PD
W
1.5
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cutoff voltage
Symbol
IDSS
IGSS
VGS(off)
Yfs
Testconditons
Min
Typ
Max
10
Unit
A
VDS=30V,VGS=0
VGS= 16V,VDS=0
VDS=10V,ID=1mA
VDS=4.0V,ID=11A
VGS=10V,ID=11A
VGS=4.5V,ID=11A
1
A
1.5
6
2.5
V
Forward transfer admittance
S
RDS(on)1
RDS(on)2
Ciss
28
46
45
76
m
Drain to source on-state resistance
m
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
360
125
65
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS=10V,VGS=0,f=1MHZ
Coss
Crss
ton
6.6
3.6
16
tr
ID=11A,VGS(on)=10V,RL=10 ,VDD=15V
Turn-off delay time
Fall time
toff
tf
5.3
8.5
2
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
ID =22A, VDD =24V, VGS = 10 V
QGS
QGD
2.1
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