SMD Type
Product specification
2SK3494
TO-263
Unit: mm
+0.2
4.57
-0.2
+0.1
1.27
-0.1
Features
Low on-resistance, low Qg
High avalanche resistance
+0.1
-0.1
0.1max
1.27
+0.1
0.81
-0.1
2.54
1 Gate
+0.2
2.54
-0.2
+0.1
5.08
-0.1
+0.2
0.4
-0.2
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
250
Gate to source voltage
V
30
20
A
Drain current
Idp *
80
50
A
Power dissipation
TC=25
TA=25
PD
W
1.4
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Symbol
IDSS
IGSS
Vth
Testconditons
Min
Typ
Max
10
Unit
A
VDS=200V,VGS=0
VGS= 30V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=10A
VGS=10V,ID=10A
1
A
2.0
7
4.0
V
14
82
S
Yfs
RDS(on)
Ciss
Coss
Crss
ton
105
m
2450
356
40
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS=25V,VGS=0,f=1MHZ
Output capacitance
Reverse transfer capacitance
Turn-on delay time
36
Rise time
tr
20
ID=10A,VGS(on)=10V,RL=10
,VDD=100V
Turn-off delay time
toff
184
29
Fall time
tf
Total Gate Charge
QG
41
ID =10A, VDD =100V, VGS = 10 V
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
8.4
14
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