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2SK3295

型号:

2SK3295

描述:

4.5 V可驱动低通态电阻RDS(on ) 1 = 18 m最大。 ( VGS = 10V , ID = 18 A)[ 4.5 V drive available Low on-state resistance RDS(on)1 = 18 m MAX. (VGS = 10 V, ID = 18 A) ]

品牌:

TYSEMI[ TY Semiconductor Co., Ltd ]

页数:

2 页

PDF大小:

139 K

TransistIoCrs  
Product specification  
2SK3295  
TO-263  
Unit: mm  
Features  
+0.2  
4.57  
-0.2  
4.5 V drive available  
+0.1  
1.27  
-0.1  
Low on-state resistance  
RDS(on)1 = 18 mÙ MAX. (VGS = 10 V, ID = 18 A)  
Low gate charge  
QG = 16 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)  
Built-in gate protection diode  
+0.1  
1.27  
-0.1  
0.1max  
+0.1  
0.81  
-0.1  
Surface mount device available  
2.54  
1 Gate  
+0.2  
2.54  
-0.2  
+0.1  
5.08  
-0.1  
+0.2  
0.4  
-0.2  
2 Drain  
3 Source  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current(DC)  
Symbol  
VDSS  
Rating  
20  
Unit  
V
VGSS  
V
20  
ID(DS)  
A
35  
Drain Current(pulse) *  
ID(pulse)  
140  
1.5  
35  
A
Total Power Dissipation (TA = 25  
Total Power Dissipation (TC = 25  
Channel Temperature  
)
)
PT  
W
Tch  
Tstg  
150  
Storage temperature  
-55 to +150  
* PW 10ìs,Dduty cycle 1%.  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 2  
4008-318-123  
TransistIoCrs  
Product specification  
2SK3295  
Electrical Characteristics Ta = 25  
Parameter  
Drain Cut-off Current  
Gate Leakage Current  
Gate Cut-off Voltage  
Symbol  
IDSS  
Testconditons  
VDS = 20 V, VGS = 0 V  
VGS = 20 V, VDS = 0 V  
Min  
Typ  
Max  
10  
Unit  
ìA  
ìA  
V
IGSS  
10  
VGS(off) VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 18 A  
1.0  
7.5  
2.5  
Forward Transfer Admittance  
S
Yfs  
RDS(on)1 VGS = 10 V, ID = 18 A  
RDS(on)2 VGS = 4.5 V, ID = 18 A  
13  
21  
18  
27  
mÙ  
mÙ  
pF  
pF  
pF  
ns  
Drain to Source On-state Resistance  
Input Capacitance  
Output Capacitance  
Feedback Capacitance  
Turn-on Delay Time  
Rise Time  
Ciss  
Coss  
Crss  
td(on)  
tr  
VDS = 10 V  
720  
370  
180  
85  
VGS = 0 V  
f= 1 MHz  
VDD = 10 V , ID = 18 A  
VGS(on) = 10 V  
RG = 10 Ù  
2000  
65  
ns  
Turn-off Delay Time  
Fall Time  
td(off)  
tf  
ns  
270  
16  
ns  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
Qg  
VDD = 16 V  
VGS = 10 V  
ID = 35 A  
nC  
nC  
nC  
V
Qgs  
Qgd  
3.1  
5.2  
1.0  
28  
VF(S-D) IF = 35 A, VGS = 0 V  
trr  
IF = 35 A, VGS = 0 V  
di/dt = 100 A/ ìs  
ns  
Qrr  
14  
nC  
http://www.twtysemi.com  
sales@twtysemi.com  
2 of 2  
4008-318-123  
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