SMD Type
TraMnOsiSstFIoCErsT
Product specification
2SK3225
TO-252
Unit: mm
Features
+0.15
-0.15
+0.1
2.30
-0.1
6.50
Low On-State Resistance
+0.2
5.30
-0.2
+0.8
0.50
-0.7
RDS(on)1 = 18 m MAX. (VGS = 10 V, ID = 17A)
RDS(on)2 = 27 m MAX. (VGS = 4.0 V, ID = 17 A)
Low Ciss : Ciss = 2100 pF TYP.
Built-in Gate Protection Diode
0.127
max
+0.1
0.80
-0.1
+0.1
0.60
-0.1
2.3
4.60
1 Gate
+0.15
-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
VDSS
Rating
Unit
V
Drain to source voltage
60
20
VGSS(AC)
VGSS(DC)
ID
V
Gate to source voltage
Drain current
+20,-10
34
V
A
Idp *
A
136
40
Power dissipation
TC=25
TA=25
PD
W
2.0
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
IDSS
IGSS
VGS(off)
Yfs
Testconditons
VDS=60V,VGS=0
Min
Typ
Max
10
Unit
A
Drain cut-off current
Gate leakage current
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=17A
VGS=10V,ID=17A
VGS=4V,ID=17A
10
A
Gate to source cut off voltage
Forward transfer admittance
1..0
13
1.5
27
2.0
V
S
13
18
27
m
Drain to source on-state resistance
RDS(on)
18
m
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
ton
tr
2100
550
220
32
pF
pF
pF
ns
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
300
110
140
ID=17A,VGS(on)=10V,RG=10 ,VDD=30V
Turn-off delay time
Fall time
toff
tf
1
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