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2SK3018

型号:

2SK3018

描述:

低导通电阻。快速开关速度。硅的N沟道MOSFET驱动器电路可以是简单的。[ Low on-resistance. Fast switching speed. Silicon N-channel MOSFET Drive circuits can be simple. ]

品牌:

TYSEMI[ TY Semiconductor Co., Ltd ]

页数:

2 页

PDF大小:

199 K

MOSFET  
MOSFET  
Product specification  
2SK3018  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
+0.1  
-0.1  
0.4  
3
Features  
Drain  
Low on-resistance.  
1
2
+0.1  
0.95  
-0.1  
Fast switching speed.  
Silicon N-channel MOSFET  
Drive circuits can be simple.  
+0.05  
0.1  
-0.01  
+0.1  
-0.1  
1.9  
Gate  
1. Gate  
2. Source  
Gate  
Protection  
Diode  
3. Drain  
Source  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Drain-source voltage  
Gate-source voltage  
Symbol  
Rating  
30  
Unit  
VDSS  
VGSS  
ID  
V
V
±20  
100  
400  
200  
625  
150  
Drain current  
mA  
1
IDP*  
2
Total power dissipation  
Channel to ambient  
Channel Temperature  
Storage temperature  
mW  
/W  
PD *  
2
Rth(ch-a) *  
Tch  
Tstg  
-55 to +150  
*1. Pw10ìs, duty cycle1%.  
*2. With each pin mounted on the recommended lands.  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 2  
4008-318-123  
MOSFET  
MOSFET  
Product specification  
2SK3018  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Testconditons  
Min  
Typ Max  
Unit  
ìA  
V
Gate-source leakage  
IGSS  
1
VGS =±20 V , VDS = 0 V  
±
Drain-source Breakdown voltage  
Zero gate voltage drain current  
Gate threshold voltage  
V(BR)DSS ID= 10 ìA, VGS = 0V  
30  
IDSS VDS = 30 V, VGS = 0V  
1
ìA  
V
VGS(th) VDS = 3 V, ID= 100 ìA  
0.8  
1.5  
ID= 10 mA, VGS = 4V  
RDS(on)  
5
7
8
Static drain-source on-state resistance  
Ω
ID= 1mA, VGS = 2.5V  
13  
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
Yfs  
Ciss  
Coss  
Crss  
td(on)  
tr  
VDS = 3 V, ID= 10 mA  
VDS = 5 V,  
20  
mS  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
13  
9
VDS = 0 V,  
f= 1MHz  
4
ID= 10 mA, VDD= 5 V,  
VGS= 5 V,  
15  
35  
80  
80  
Turn-off time  
td(off)  
tr  
RL=500Ω  
Fall time  
RG= 10Ω  
http://www.twtysemi.com  
sales@twtysemi.com  
2 of 2  
4008-318-123  
厂商 型号 描述 页数 下载

PANASONIC

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ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

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2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

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2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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