SSMMDD TTyyppee
MMOOSSFFEETT
Product specification
2SK2158
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
Features
3
Capable of drive gate with 1.5 V
Because of high input impedance, there is no need to
consider driving current.
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
-0.1
Bias resistance can be omitted, enabling reduction in total
number of parts.
1.9
1.Base
1 GATE
2.Emitter
2 SOURCE
3.collector
3 DRAIN
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
Rating
Unit
V
VDSS
VGSS
ID
50
7.0
Gate to source voltage
Drain current
V
A
0.1
Idp *
PD
A
0.2
Power dissipation
200
m W
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
IDSS
IGSS
VGS(off)
Testconditons
Min
Typ
Max
1.0
3.0
Unit
A
Drain cut-off current
VDS=50V,VGS=0
VGS= 7.0V,VDS=0
VDS=3V,ID=10
Gate leakage current
A
Gate to source cutoff voltage
Forward transfer admittance
0.5
20
0.7
1.1
V
A
VDS=3V,ID=10mA
ms
Yfs
VGS=1.5V,ID=1.0mA
VGS=2.5V,ID=10mA
VGS=4.0V,ID=1.0mA
32
16
12
6
50
20
15
Drain to source on-state resistance
RDS(on)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
td(on)
tr
pF
pF
pF
ns
ns
ns
ns
VDS=3V,VGS=0,f=1MHZ
8
1
9
48
21
31
ID=20mA,VGS(on)=3V,RL=150 ,RG=10
,VDD=3V
Turn-off delay time
Fall time
td(off)
tf
Marking
Marking
G23
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