请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTP32P05T

型号：

IXTP32P05T

描述：

TrenchPTM功率MOSFET P沟道增强型额定雪崩[ TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

187 K

下载PDF手册
TrenchPTM  
Power MOSFETs  
VDSS = - 50V  
ID25 = - 32A  
IXTY32P05T  
IXTA32P05T  
IXTP32P05T  
RDS(on)  
≤
39mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
D
S
TO-252 (IXTY)  
G
G
S
D (Tab)  
TO-263 AA (IXTA)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
S
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 50  
- 50  
V
V
VDGR  
D (Tab)  
VGSS  
VGSM  
Continuous  
Transient  
±15  
±25  
V
V
TO-220AB (IXTP)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
- 32  
A
A
-110  
IA  
EAS  
TC = 25°C  
TC = 25°C  
- 32  
200  
A
G
mJ  
D
S
D (Tab)  
= Drain  
PD  
TC = 25°C  
83  
W
G = Gate  
D
S = Source  
Tab = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
z International Standard Packages  
z Avalanche Rated  
Md  
Mounting Torque (TO-220)  
1.13/10  
Nm/lb.in.  
Weight  
TO-252  
TO-263  
TO-220  
0.35  
2.50  
3.00  
g
g
g
z Extended FBSOA  
z Fast Intrinsic Diode  
z
Low RDS(ON) and QG  
Advantages  
z
Symbol  
Test Conditions  
Characteristic Values  
Easy to Mount  
Space Savings  
High Power Density  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
- 50  
- 2.5  
Typ. Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ± 15V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
- 4.5  
Applications  
±50 nA  
z
High-Side Switching  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
Current Regulators  
Battery Charger Applications  
z
IDSS  
- 3 μA  
-100 μA  
z
TJ = 125°C  
z
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
39 mΩ  
z
z
DS99967C(01/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTY32P05T IXTA32P05T  
IXTP32P05T  
Symbol  
Test Conditions  
Characteristic Values  
TO-252 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = -10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = - 25V, f = 1MHz  
11  
17  
S
Ciss  
Coss  
Crss  
1975  
315  
pF  
pF  
pF  
160  
td(on)  
tr  
td(off)  
tf  
20  
28  
39  
27  
ns  
ns  
ns  
ns  
Pins: 1 - Gate  
3 - Source  
2,4 - Drain  
Inches  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 10Ω (External)  
Dim. Millimeter  
Min. Max.  
Min.  
Max.  
A
A1  
2.19 2.38  
0.89 1.14  
0.086  
0.035  
0.094  
0.045  
A2  
b
0
0.13  
0
0.005  
0.035  
Qg(on)  
Qgs  
46  
19  
11  
nC  
nC  
nC  
0.64 0.89  
0.025  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
b1  
b2  
0.76 1.14  
5.21 5.46  
0.030  
0.205  
0.045  
0.215  
Qgd  
c
c1  
0.46 0.58  
0.46 0.58  
0.018  
0.018  
0.023  
0.023  
RthJC  
RthCS  
1.5 °C/W  
°C/W  
D
D1  
5.97 6.22  
4.32 5.21  
0.235  
0.170  
0.245  
0.205  
TO-220  
0.50  
E
E1  
6.35 6.73  
4.32 5.21  
0.250  
0.170  
0.265  
0.205  
e
e1  
2.28 BSC  
4.57 BSC  
0.090 BSC  
0.180 BSC  
H
L
9.40 10.42  
0.51 1.02  
0.370  
0.020  
0.410  
0.040  
Source-Drain Diode  
L1  
L2  
L3  
0.64 1.02  
0.89 1.27  
2.54 2.92  
0.025  
0.035  
0.100  
0.040  
0.050  
0.115  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
- 32  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = - 32A, VGS = 0V, Note 1  
-128  
-1.5  
TO-220 Outline  
trr  
QRM  
IRM  
26  
21  
-1.6  
ns  
nC  
A
IF = -16A, -di/dt = -100A/μs  
VR = - 25V, VGS = 0V  
Note  
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
TO-263 Outline  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
b
b2  
4.06  
0.51  
1.14  
4.83  
0.99  
1.40  
.160  
.020  
.045  
.190  
.039  
.055  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
c
c2  
0.40  
1.14  
0.74  
1.40  
.016  
.045  
.029  
.055  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.280  
.380  
.320  
E
9.65  
10.41  
.380  
.405  
E1  
e
L
6.22  
2.54  
14.61  
2.29  
1.02  
1.27  
0
8.13  
BSC  
15.88  
2.79  
1.40  
1.78  
0.13  
.270  
.100 BSC  
.320  
1. Gate  
2. Drain  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.005  
3. Source  
L1  
4. Drain  
L2  
Bottom Side  
L3  
L4  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTY32P05T IXTA32P05T  
IXTP32P05T  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
-32  
-28  
-24  
-20  
-16  
-12  
-8  
-100  
-90  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
VGS = -10V  
- 9V  
VGS = -10V  
- 9V  
- 8V  
- 7V  
- 8V  
- 7V  
- 6V  
- 5V  
- 6V  
- 5V  
-4  
0
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
-1.2  
-1.4  
0
-1  
-2  
-3  
-4  
-5  
-6  
-7  
-8  
-9  
-10  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = -16A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
-32  
-28  
-24  
-20  
-16  
-12  
-8  
VGS = -10V  
- 9V  
VGS = -10V  
- 8V  
I D = - 32A  
- 7V  
- 6V  
I D = -16A  
-4  
- 5V  
-1.8  
0
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
-1.2  
-1.4  
-1.6  
-2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = -16A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
-35  
-30  
-25  
-20  
-15  
-10  
-5  
VGS = -10V  
TJ = 125ºC  
TJ = 25ºC  
0
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
-55  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTY32P05T IXTA32P05T  
IXTP32P05T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
24  
20  
16  
12  
8
-35  
-30  
-25  
-20  
-15  
-10  
-5  
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
4
0
0
-3.0  
-3.5  
-4.0  
-4.5  
-5.0  
-5.5  
-6.0  
-6.5  
-1.6  
-40  
0
-4  
-8  
-12  
-16  
-20  
-24  
-28  
-32  
-36  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
-100  
-90  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
VDS = - 25V  
I
I
D = -16A  
G = -1mA  
TJ = 125ºC  
TJ = 25ºC  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
-0.4  
-0.6  
-0.8  
-1.0  
-1.2  
-1.4  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
-
10,000  
1,000  
100  
1,000  
= 1 MHz  
f
C
iss  
RDS(on) Limit  
-100  
25µs  
100µs  
C
oss  
-
10  
1ms  
TJ = 150ºC  
C = 25ºC  
Single Pulse  
10ms  
T
100ms  
C
rss  
-
1
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-
-
-
100  
1
10  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTY32P05T IXTA32P05T  
IXTP32P05T  
Fig. 14. Resistive Turn-on Rise Time  
vs. Drain Current  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
30  
29  
28  
27  
26  
25  
24  
23  
22  
29  
28  
27  
26  
25  
24  
23  
RG = 10Ω , VGS = -10V  
DS = - 30V  
V
TJ = 25ºC  
RG = 10Ω , VGS = -10V  
VDS = - 30V  
I D = -16A  
I D = - 32A  
TJ = 125ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
-16  
-18  
-20  
-22  
-24  
-26  
-28  
-30  
-32  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
28.0  
27.5  
27.0  
26.5  
26.0  
25.5  
25.0  
24.5  
24.0  
23.5  
52  
48  
44  
40  
36  
32  
28  
24  
20  
16  
90  
36  
t r  
td(on) - - - -  
80  
70  
60  
50  
40  
30  
20  
10  
0
34  
32  
30  
28  
26  
24  
22  
20  
18  
t f  
td(off) - - - -  
TJ = 125ºC, VGS = -10V  
VDS = - 30V  
RG = 10Ω, VGS = -10V  
I D = -16A  
VDS = - 30V  
I D = -16A, - 32A  
I D = -16A, - 32A  
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
32  
34  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off Switching Times  
vs. Drain Current  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
27.5  
27.0  
26.5  
26.0  
25.5  
25.0  
24.5  
24.0  
50  
80  
70  
60  
50  
40  
30  
20  
10  
80  
70  
60  
50  
40  
30  
20  
10  
t f  
t
d(off) - - - -  
tf  
td(off) - - - -  
45  
40  
35  
30  
25  
20  
15  
TJ = 125ºC, VGS = -10V  
VDS = - 30V  
RG = 10Ω, VGS = -10V  
VDS = - 30V  
I D = - 32A  
I D = -16A  
TJ = 25ºC, 125ºC  
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
32  
34  
-16  
-18  
-20  
-22  
-24  
-26  
-28  
-30  
-32  
RG - Ohms  
ID - Amperes  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTY32P05T IXTA32P05T  
IXTP32P05T  
Fig. 19. Maximum Transient Thermal Impedance  
10  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_32P05T(A1)11-05-10-B  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.239829s