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2V7002LT3G

型号:

2V7002LT3G

描述:

小信号MOSFET 60 V 115 mA时, N.Channel SOT.23[ Small Signal MOSFET 60 V, 115 mA, N.Channel SOT.23 ]

品牌:

ONSEMI[ ONSEMI ]

页数:

4 页

PDF大小:

100 K

2N7002L, 2V7002L  
Small Signal MOSFET  
60 V, 115 mA, NChannel SOT23  
Features  
2V Prefix for Automotive and Other Applications Requiring Site and  
Change Controls  
http://onsemi.com  
AEC Qualified 2V7002L  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
PPAP Capable 2V7002L  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
7.5 W @ 10 V,  
60 V  
115 mA  
500 mA  
Compliant  
NChannel  
MAXIMUM RATINGS  
3
Rating  
DrainSource Voltage  
Symbol  
Value  
60  
Unit  
Vdc  
V
DSS  
DGR  
DrainGate Voltage (R = 1.0 MW)  
V
60  
Vdc  
GS  
1
Drain Current  
Continuous T = 25°C (Note 1)  
Continuous T = 100°C (Note 1)  
I
I
115  
75  
800  
mAdc  
D
D
C
I
DM  
C
Pulsed (Note 2)  
2
GateSource Voltage  
Continuous  
V
GSM  
20  
40  
Vdc  
Vpk  
GS  
V
MARKING  
DIAGRAM  
Nonrepetitive (t 50 ms)  
p
3
THERMAL CHARACTERISTICS  
Characteristic  
1
Symbol  
Max  
Unit  
2
Total Device Dissipation FR5 Board  
P
D
702 MG  
225  
1.8  
556  
mW  
mW/°C  
°C/W  
(Note 3) T = 25°C  
A
G
SOT23  
Derate above 25°C  
Thermal Resistance, JunctiontoAmbient  
CASE 318  
STYLE 21  
R
q
JA  
1
Total Device Dissipation  
P
D
300  
2.4  
417  
mW  
mW/°C  
°C/W  
(Note 4) Alumina Substrate, T = 25°C  
Derate above 25°C  
Thermal Resistance, JunctiontoAmbient  
A
702  
M
= Device Code  
= Date Code*  
R
q
JA  
G
= PbFree Package  
(Note: Microdot may be in either location)  
Junction and Storage Temperature  
T , T  
55 to  
+150  
°C  
J
stg  
*Date Code orientation and/or position may  
vary depending upon manufacturing location.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. The Power Dissipation of the package may result in a lower continuous drain  
current.  
ORDERING INFORMATION  
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.  
Device  
Package  
Shipping  
3. FR5 = 1.0 x 0.75 x 0.062 in.  
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.  
2N7002LT1G  
2N7002LT3G  
2V7002LT1G  
2V7002LT3G  
3000 Tape & Reel  
10,000 Tape & Reel  
3000 Tape & Reel  
10,000 Tape & Reel  
SOT23  
(PbFree)  
SOT23  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
May, 2012 Rev. 6  
2N7002L/D  
 
2N7002L, 2V7002L  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
DrainSource Breakdown Voltage  
V
60  
Vdc  
(BR)DSS  
(V = 0, I = 10 mAdc)  
GS  
D
Zero Gate Voltage Drain Current  
(V = 0, V = 60 Vdc)  
T = 25°C  
J
I
1.0  
500  
mAdc  
nAdc  
nAdc  
J
DSS  
T = 125°C  
GS  
DS  
GateBody Leakage Current, Forward  
I
100  
GSSF  
GSSR  
(V = 20 Vdc)  
GS  
GateBody Leakage Current, Reverse  
I
100  
(V = 20 Vdc)  
GS  
ON CHARACTERISTICS (Note 5)  
Gate Threshold Voltage  
V
I
1.0  
2.5  
Vdc  
mA  
Vdc  
GS(th)  
(V = V , I = 250 mAdc)  
DS  
GS  
D
OnState Drain Current  
(V 2.0 V , V = 10 Vdc)  
500  
D(on)  
DS  
DS(on) GS  
Static DrainSource OnState Voltage  
(V = 10 Vdc, I = 500 mAdc)  
V
DS(on)  
3.75  
0.375  
GS  
D
(V = 5.0 Vdc, I = 50 mAdc)  
GS  
D
Static DrainSource OnState Resistance  
(V = 10 V, I = 500 mAdc)  
r
Ohms  
mS  
DS(on)  
T = 25°C  
C
7.5  
13.5  
7.5  
GS  
D
T
= 125°C  
C
(V = 5.0 Vdc, I = 50 mAdc)  
T = 25°C  
C
GS  
D
T
C
= 125°C  
13.5  
Forward Transconductance  
(V 2.0 V , I = 200 mAdc)  
g
FS  
80  
DS  
DS(on)  
D
DYNAMIC CHARACTERISTICS  
Input Capacitance  
C
50  
25  
pF  
pF  
pF  
iss  
(V = 25 Vdc, V = 0, f = 1.0 MHz)  
DS  
GS  
Output Capacitance  
C
oss  
(V = 25 Vdc, V = 0, f = 1.0 MHz)  
DS  
GS  
Reverse Transfer Capacitance  
(V = 25 Vdc, V = 0, f = 1.0 MHz)  
C
5.0  
rss  
DS  
GS  
SWITCHING CHARACTERISTICS (Note 5)  
TurnOn Delay Time  
t
20  
40  
ns  
ns  
d(on)  
(V = 25 Vdc, I ^ 500 mAdc,  
DD  
D
R
= 25 W, R = 50 W, V  
= 10 V)  
G
L
gen  
TurnOff Delay Time  
t
d(off)  
BODYDRAIN DIODE RATINGS  
Diode Forward OnVoltage  
V
1.5  
115  
800  
Vdc  
SD  
(I = 11.5 mAdc, V = 0 V)  
S
GS  
Source Current Continuous  
(Body Diode)  
I
mAdc  
mAdc  
S
Source Current Pulsed  
I
SM  
5. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.  
http://onsemi.com  
2
 
2N7002L, 2V7002L  
TYPICAL ELECTRICAL CHARACTERISTICS  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1.0  
V
= 10 V  
T = 25°C  
DS  
A
25°C  
-ꢀ55°C  
0.8  
0.6  
0.4  
0.2  
V
= 10 V  
9 V  
GS  
125°C  
8 V  
7 V  
6 V  
5 V  
4 V  
3 V  
0
1.0 2.0 3.0 4.0 5.0  
6.0  
7.0 8.0 9.0 10  
0
1.0 2.0 3.0 4.0  
5.0  
6.0 7.0 8.0  
9.0 10  
V
DS  
, DRAIN SOURCE VOLTAGE (VOLTS)  
V , GATE SOURCE VOLTAGE (VOLTS)  
GS  
Figure 1. Ohmic Region  
Figure 2. Transfer Characteristics  
2.4  
1.2  
1.05  
1.1  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
I
= V  
GS  
= 1.0 mA  
V
I
= 10 V  
DS  
GS  
= 200 mA  
D
D
1.10  
1.0  
0.95  
0.9  
0.85  
0.8  
0.75  
0.7  
-ꢀ60  
-ꢀ20  
+ꢀ20  
+ꢀ60  
+ꢀ100  
+ꢀ140  
-ꢀ60  
-ꢀ20  
+ꢀ20  
+ꢀ60  
+ꢀ100  
+ꢀ140  
T, TEMPERATURE (°C)  
T, TEMPERATURE (°C)  
Figure 3. Temperature versus Static  
Figure 4. Temperature versus Gate  
Threshold Voltage  
DrainSource OnResistance  
http://onsemi.com  
3
2N7002L, 2V7002L  
PACKAGE DIMENSIONS  
SOT23 (TO236)  
CASE 31808  
ISSUE AP  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH  
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM  
THICKNESS OF BASE MATERIAL.  
SEE VIEW C  
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS.  
H
E
MILLIMETERS  
INCHES  
NOM  
0.040  
0.002  
0.018  
0.005  
0.114  
0.051  
0.075  
0.008  
0.021  
0.094  
−−−  
E
DIM  
A
A1  
b
c
D
E
e
L
L1  
MIN  
0.89  
0.01  
0.37  
0.09  
2.80  
1.20  
1.78  
0.10  
0.35  
2.10  
0°  
NOM  
1.00  
0.06  
0.44  
0.13  
2.90  
1.30  
1.90  
0.20  
0.54  
2.40  
−−−  
MAX  
MIN  
0.035  
0.001  
0.015  
0.003  
0.110  
0.047  
0.070  
0.004  
0.014  
0.083  
0°  
MAX  
0.044  
0.004  
0.020  
0.007  
0.120  
0.055  
0.081  
0.012  
0.029  
0.104  
10°  
1.11  
0.10  
0.50  
0.18  
3.04  
1.40  
2.04  
0.30  
0.69  
2.64  
10°  
c
1
2
b
0.25  
e
q
H
A
E
q
L
STYLE 21:  
A1  
PIN 1. GATE  
2. SOURCE  
3. DRAIN  
L1  
VIEW C  
SOLDERING FOOTPRINT  
0.95  
0.037  
0.95  
0.037  
2.0  
0.079  
0.9  
0.035  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
0.8  
0.031  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer  
purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 8002829855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
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Phone: 81358171050  
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Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
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For additional information, please contact your local  
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2N7002L/D  
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