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2SK4094_12

型号:

2SK4094_12

描述:

N沟道MOSFET硅通用开关设备的应用[ N-Channel Silicon MOSFET General-Purpose Switching Device Applications ]

品牌:

SANYO[ SANYO SEMICON DEVICE ]

页数:

5 页

PDF大小:

350 K

Ordering number : ENA0523A  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SK4094  
Features  
ON-resistance R (on)1=3.8m (typ.)  
Input capacitance Ciss=12500pF (typ.)  
4V drive  
Ω
DS  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
60  
±20  
100  
400  
1.75  
90  
DSS  
V
V
GSS  
I
A
D
Drain Current (Pulse)  
I
PW 10 s, duty cycle 1%  
A
μ
DP  
W
W
Allowable Power Dissipation  
P
D
Tc=25 C  
°
Channel Temperature  
Tch  
150  
C
C
°
°
Storage Temperature  
Tstg  
--55 to +150  
Avalanche Energy (Single Pulse) *1  
Avalanche Current *2  
E
850  
70  
mJ  
A
AS  
I
AV  
Note : 1 V =30V, L=200 H, I =70A (Fig.1)  
*
μ
DD  
2 L 200 H, single pulse  
AV  
*
μ
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
• Package  
: TO-220-3L  
7536-001  
• JEITA, JEDEC  
: SC-46, TO-220AB  
• Minimum Packing Quantity : 50 pcs./magazine  
4.5  
10.0  
3.6  
1.3  
Marking  
Electrical Connection  
2
(0.6)  
8.9 MAX  
K4094  
LOT No.  
1
1.52  
1.27  
0.8  
0.5  
3
1
2
3
1 : Gate  
2 : Drain  
3 : Source  
2.54  
2.54  
SANYO : TO-220-3L  
http://semicon.sanyo.com/en/network  
12512 TKIM TC-00002699/N0806QA SYIM TC-00000295  
No. A0523-1/5  
2SK4094  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0V  
60  
V
μA  
μA  
V
(BR)DSS  
D
GS  
=60V, V =0V  
I
I
V
V
V
V
1
DSS  
DS  
GS  
DS  
DS  
GS  
=16V, V =0V  
DS  
±10  
2.6  
GSS  
V
(off)  
GS  
=10V, I =1mA  
1.2  
45  
D
Forward Transfer Admittance  
| yfs |  
=10V, I =50A  
75  
S
D
R
R
(on)1  
(on)2  
I
I
=50A, V =10V  
GS  
3.8  
4.9  
5.0  
7.0  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
DS  
D
D
Static Drain-to-Source On-State Resistance  
=50A, V =4V  
GS  
DS  
Input Capacitance  
Ciss  
12500  
1200  
950  
80  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Coss  
Crss  
V
=20V, f=1MHz  
DS  
t
t
t
t
(on)  
d
r
630  
860  
750  
220  
30  
ns  
See Fig.2  
Turn-OFF Delay Time  
Fall Time  
(off)  
ns  
d
f
ns  
Total Gate Charge  
Qg  
nC  
nC  
nC  
V
Gate-to-Source Charge  
Gate-to-Drain “Miller” Charge  
Diode Forward Voltage  
Qgs  
Qgd  
V
=30V, V =10V, I =100A  
GS  
DS  
D
55  
V
SD  
I =100A, V =0V  
GS  
1.0  
1.2  
S
Fig.1 Avalanche Resistance Test Circuit  
Fig.2 Switching Time Test Circuit  
V
IN  
V =30V  
DD  
10V  
0V  
L
I
=50A  
D
50Ω  
V
IN  
R =0.6Ω  
L
D
V
OUT  
2SK4094  
PW=10μs  
D.C.1%  
10V  
0V  
V
DD  
50Ω  
G
2SK4094  
P. G  
50Ω  
S
I
D
-- V  
DS  
I
-- V  
D GS  
200  
180  
160  
140  
120  
100  
80  
200  
Tc=25°C  
Single pulse  
V
=10V  
DS  
Single pulse  
180  
160  
140  
120  
100  
80  
V
=3V  
GS  
60  
60  
40  
40  
20  
0
20  
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
Drain-to-Source Voltage, V  
-- V  
IT11430  
Gate-to-Source Voltage, V  
GS  
-- V  
IT11431  
DS  
No. A0523-2/5  
2SK4094  
R
(on) -- V  
GS  
R
(on) -- Tc  
DS  
DS  
10  
9
20  
18  
16  
14  
12  
10  
8
I =50A  
Single pulse  
Single pulse  
D
8
7
6
5
4
3
6
2
4
1
0
2
0
--50  
--25  
0
25  
50  
75  
100  
125  
150  
1
2
3
4
5
6
7
8
9
10  
Gate-to-Source Voltage, V  
-- V  
IT11558  
Case Temperature, Tc -- °C  
IT11559  
GS  
| yfs | -- I  
I
-- V  
D
S SD  
3
2
3
2
V
=0V  
V
=10V  
GS  
DS  
Single pulse  
Single pulse  
100  
7
5
3
2
100  
7
5
10  
7
5
3
2
3
2
1.0  
7
5
10  
7
3
2
5
3
2
0.1  
7
5
3
2
1.0  
7
0.01  
2
3
5
7
2
3
5
7
2
3
5
7
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
IT11435  
0.1  
1.0  
10  
100  
Diode Forward Voltage, V  
SD  
-- V  
Drain Current, I -- A  
D
IT11434  
Ciss, Coss, Crss -- V  
SW Time -- I  
DS  
D
3
3
2
f=1MHz  
V
=30V  
=10V  
DD  
2
V
GS  
10k  
1000  
7
5
7
5
t
f
3
2
3
2
100  
1k  
7
5
7
5
2
3
5
7
2
3
5
7
2
3
5
7
0
5
10  
15  
20  
25  
30  
IT10474  
0.1  
1.0  
10  
100  
IT10473  
Drain Current, I -- A  
Drain-to-Source Voltage, V  
-- V  
D
DS  
A S O  
V
GS  
-- Qg  
10  
9
1000  
7
V
=30V  
DS  
=100A  
I
=400A  
10μs  
DP  
5
I
D
3
2
8
I
=100A  
D
100  
7
5
7
3
2
6
5
10  
Operation in  
this area is  
limited by R (on).  
7
5
4
3
2
DS  
3
1.0  
7
5
2
3
2
Tc=25°C  
Single pulse  
1
0
0.1  
0.1  
2
3
5
7
2
3
5
7
2
3
5
7
0
50  
100  
150  
200  
250  
IT10475  
1.0  
10  
100  
IT10960  
Total Gate Charge, Qg -- nC  
Drain-to-Source Voltage, V  
DS  
-- V  
No. A0523-3/5  
2SK4094  
P
-- Ta  
P
-- Tc  
D
D
100  
90  
80  
70  
60  
50  
40  
30  
20  
2.0  
1.75  
1.5  
1.0  
0.5  
0
10  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta -- °C  
Case Temperature, Tc -- °C  
IT11548  
IT10483  
E
-- Ta  
AS  
120  
100  
80  
60  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
175  
IT11439  
Ambient Temperature, Ta -- °C  
No. A0523-4/5  
2SK4094  
Note on usage : Since the 2SK4094 is a MOSFET product, please avoid using this device in the vicinity  
of highly charged objects.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment. The products mentioned herein  
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,  
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal  
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten  
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they  
grant any guarantee thereof. If you should intend to use our products for new introduction or other application  
different from current conditions on the usage of automotive device, communication device, office equipment,  
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)  
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be  
solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are  
not guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an  
independent device, the customer should always evaluate and test devices mounted in the customer's  
products or equipment.  
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using  
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating  
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
Co.,Ltd. products described or contained herein.  
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all  
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures  
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give  
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,  
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but  
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and  
structural design.  
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are  
controlled under any of applicable local export control laws and regulations, such products may require the  
export license from the authorities concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system, or  
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the  
SANYO Semiconductor Co.,Ltd. product that you intend to use.  
Upon using the technical information or products described herein, neither warranty nor license shall be  
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any  
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third  
party's intellectual property rights which has resulted from the use of the technical information and products  
mentioned above.  
This catalog provides information as of January, 2012. Specications and information herein are subject  
to change without notice.  
PS No. A0523-5/5  
厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

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2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

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2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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