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IXA27IF1200HJ

型号：

IXA27IF1200HJ

描述：

由于易于并联的导通电压的正温度系数[ Easy paralleling due to the positive temperature coefficient of the on-state voltage ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

134 K

下载PDF手册
IXA27IF1200HJ  
VCES  
IC25  
=
=
=
1200V  
43A  
XPT IGBT  
VCE(sat)  
1.8V  
Copack  
Part number  
IXA27IF1200HJ  
Backside: isolated  
2 (C)  
(G) 1  
3 (E)  
ISOPLUS247  
Features / Advantages:  
Applications:  
Package:  
● Easy paralleling due to the positive temperature  
coefficient of the on-state voltage  
● Rugged XPT design (Xtreme light Punch Through)  
results in:  
- short circuit rated for 10 µsec.  
- very low gate charge  
● AC motor drives  
● Solar inverter  
● Isolation Voltage:  
● Industry standard outline  
● RoHS compliant  
● Epoxy meets UL 94V-0  
● Soldering pins for PCB mounting  
● Backside: DCB ceramic  
● Reduced weight  
V~  
3600  
● Medical equipment  
● Uninterruptible power supply  
● Air-conditioning systems  
● Welding equipment  
● Switched-mode and resonant-mode  
power supplies  
- low EMI  
- square RBSOA @ 3x Ic  
● Advanced power cycling  
● Thin wafer technology combined with the XPT design  
results in a competitive low VCE(sat)  
● SONIC™ diode  
● Inductive heating, cookers  
● Pumps, Fans  
- fast and soft reverse recovery  
- low operating forward voltage  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20100623b  
© 2010 IXYS all rights reserved  
IXA27IF1200HJ  
Ratings  
IGBT  
Symbol  
VCES  
Definition  
collector emitter voltage  
Conditions  
min. typ. max. Unit  
TVJ  
=
25°C  
1200  
±20  
±30  
43  
V
V
V
A
A
W
V
V
V
max. DC gate voltage  
VGES  
VGEM  
IC25  
max. transient gate emitter voltage  
collector current  
TC = 25°C  
TC = 80°C  
TC = 25°C  
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 125°C  
IC  
27  
80  
total power dissipation  
P
tot  
150  
2.1  
collector emitter saturation voltage  
VCE(sat)  
IC = 25A; V = 15 V  
1.8  
2.1  
5.9  
GE  
gate emitter threshold voltage  
collector emitter leakage current  
VGE(th)  
ICES  
IC = 1mA; VGE = VCE  
5.4  
6.5  
VCE = VCES; V = 0 V  
0.1 mA  
mA  
GE  
0.1  
gate emitter leakage current  
total gate charge  
IGES  
VGE = ±20 V  
500  
nA  
nC  
ns  
QG(on)  
td(on)  
tr  
VCE = 600 V; V = 15 V; IC = 25 A  
76  
70  
GE  
turn-on delay time  
current rise time  
40  
ns  
inductive load  
VCE 600V; IC = 25A  
TVJ = 125°C  
turn-off delay time  
td(off)  
t f  
250  
100  
2.5  
3
ns  
=
current fall time  
ns  
VGE = ±15 V; RG= 39 Ω  
turn-on energy per pulse  
turn-off energy per pulse  
reverse bias safe operating area  
Eon  
mJ  
mJ  
Eoff  
RBSOA  
ICM  
VGE = ±15 V; RG= 39 Ω  
VCEmax = 1200V  
TVJ = 125°C  
TVJ = 125°C  
A
75  
10  
short circuit safe operating area  
short circuit duration  
SCSOA  
tSC  
VCEmax = 900V  
VCE = 900V; VGE = ±15 V  
RG = 39Ω; non-repetitive  
µs  
A
short circuit current  
ISC  
100  
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthCH  
0.84 K/W  
K/W  
0.25  
Diode  
VRRM  
IF25  
max. repetitive reverse voltage  
forward current  
TVJ = 25°C  
TC = 25°C  
TC = 80°C  
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
TVJ = 125°C  
1200  
42  
V
A
IF80  
25  
A
forward voltage  
VF  
IF = 30A  
VR = VRRM  
2.20  
V
1.95  
V
reverse current  
IR  
*
mA  
mA  
µC  
A
* not applicable, see Ices value above  
reverse recovery charge  
*
3.5  
30  
Qrr  
VR = 600 V  
max. reverse recovery current  
reverse recovery time  
IRM  
-diF /dt = -600 A/µs  
TVJ = 125°C  
trr  
350  
0.9  
ns  
mJ  
IF = 30A; V = 0 V  
GE  
reverse recovery energy  
Erec  
RthJC  
RthCH  
thermal resistance junction to case  
thermal resistance case to heatsink  
1.2 K/W  
K/W  
0.25  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20100623b  
© 2010 IXYS all rights reserved  
IXA27IF1200HJ  
Ratings  
Package ISOPLUS247  
Symbol  
IRMS  
Definition  
Conditions  
per terminal  
min. typ. max.  
70  
150  
Unit  
A
°C  
°C  
°C  
g
RMS current  
TVJ  
-40  
-40  
-40  
virtual junction temperature  
operation temperature  
storage temperature  
125  
150  
Top  
Tstg  
Weight  
6
FC  
20  
2.7  
120  
N
mm  
mm  
V
mounting force with clip  
terminal to terminal  
terminal to backside  
dSpp/App  
dSpb/Apb  
creepage distance on surface | striking distance through air  
4.1  
t = 1 second  
V
3600  
3000  
isolation voltage  
ISOL  
50/60 Hz, RMS; IISOL ≤ 1 mA  
t = 1 minute  
V
Product Marking  
Part number  
I = IGBT  
X = XPT IGBT  
A = Gen 1 / std  
27 = Current Rating [A]  
IF = Copack  
1200 = Reverse Voltage [V]  
HJ = ISOPLUS247 (3)  
Logo  
IXYS  
ISOPLUS®  
XXXXXXXXX  
Zyyww  
Part No.  
Assembly Line  
abcd  
Assembly Code  
Date Code  
Ordering  
Standard  
Part Number  
Marking on Product  
IXA27IF1200HJ  
Delivery Mode  
Tube  
Quantity Code No.  
IXA27IF1200HJ  
30  
509098  
TVJ = 150°C  
* on die level  
Equivalent Circuits for Simulation  
IGBT  
Diode  
V0  
I
R0  
threshold voltage  
slope resistance *  
V0 max  
R0 max  
1.1  
55  
1.25  
28.3  
V
mΩ  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20100623b  
© 2010 IXYS all rights reserved  
IXA27IF1200HJ  
Outlines ISOPLUS247  
A
A2  
E1  
E
Millimeter  
Inches  
Dim.  
min  
max  
5.21  
min  
max  
A
A1  
A2  
b
4.83  
2.29  
1.91  
1.14  
1.91  
2.92  
0.61  
20.80  
0.190  
0.090  
0.075  
0.045  
0.075  
0.115  
0.024  
0.819  
0.620  
0.065  
0.799  
0.620  
0.520  
0.205  
0.100  
0.085  
0.055  
0.087  
0.128  
0.033  
0.840  
0.640  
0.085  
0.815  
0.635  
0.540  
2.54  
2.16  
1.40  
b2  
b4  
c
2.20  
3.24  
0.83  
D
21.34  
16.26  
2.15  
1
2
3
D1 15.75  
D2 1.65  
D3 20.30  
15.75  
E1 13.21  
20.70  
16.13  
13.72  
E
e
L
5.45 BSC  
0.215 BSC  
19.81  
3.81  
5.59  
4.25  
-
20.60  
4.38  
6.20  
5.50  
0.10  
0.780  
0.150  
0.220  
0.167  
-
0.811  
L1  
Q
R
0.172  
0.244  
0.217  
0.004  
W
2x b2  
Die konvexe Form des Substrates ist typ. < 0.04 mm über der  
Kunststoffoberfläche der Bauteilunterseite  
The convex bow of substrate is typ. < 0.04 mm over plastic  
surface level of device bottom side  
e
2x  
c
3x b  
b4  
A1  
Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD  
gemäß JEDEC außer Schraubloch und Lmax  
.
This drawing will meet all dimensions requiarement of JEDEC  
outline TO-247 AD except screw hole and except Lmax  
.
W
2 (C)  
3 (E)  
(G) 1  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20100623b  
© 2010 IXYS all rights reserved  
IXA27IF1200HJ  
IGBT  
50  
50  
40  
30  
20  
10  
0
13 V  
VGE = 15 V  
VGE = 15 V  
17 V  
19 V  
11 V  
40  
TVJ = 125°C  
30  
IC  
IC  
TVJ = 25°C  
TVJ = 125°C  
[A]  
20  
[A]  
9 V  
10  
0
0
1
2
3
0
1
2
3
4
5
VCE [V]  
VCE [V]  
Fig. 1 Typ. output characteristics  
Fig. 2 Typ. output characteristics  
50  
40  
20  
15  
10  
5
IC = 25 A  
VCE = 600 V  
30  
IC  
VGE  
[A]  
20  
[V]  
10  
0
TVJ = 125°C  
TVJ = 25°C  
0
5
6
7
8
9
10 11 12 13  
0
20  
40  
60  
80  
100  
QG [nC]  
VGE [V]  
Fig. 3 Typ. tranfer characteristics  
Fig. 4 Typ. turn-on gate charge  
4
3
2
1
Eon  
Eon  
IC  
VCE = 600 V  
VGE 15 V  
TVJ = 125°C  
=
25 A  
RG  
VCE = 600 V  
VGE 15 V  
TVJ = 125°C  
=
39  
6
5
=
=
Eoff  
Eoff  
4
E
E
3
[mJ]  
[mJ]  
2
1
0
0
10  
20  
30  
40  
50  
40  
60  
80 100 120 140  
IC [A]  
Fig. 5 Typ. switching energy vs. collector current  
RG [ ]  
Fig. 6 Typ. switching energy vs. gate resistance  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20100623b  
© 2010 IXYS all rights reserved  
IXA27IF1200HJ  
Diode  
60  
7
6
5
4
3
2
1
TVJ = 125°C  
VR = 600 V  
50  
60 A  
40  
IF  
Qrr  
30  
30 A  
15 A  
[A]  
[µC]  
20  
TVJ = 125°C  
TVJ  
=
25°C  
10  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
300 400 500 600 700 800 900 1000 1100  
VF [V]  
diF /dt [A/µs]  
Fig. 7 Typ. Forward current versus VF  
Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt  
70  
60  
50  
700  
600  
TVJ = 125°C  
VR = 600 V  
TVJ = 125°C  
VR = 600 V  
60 A  
500  
400  
300  
200  
100  
0
30 A  
15 A  
IRR  
trr  
40  
[A]  
30  
[ns]  
60 A  
30 A  
15 A  
20  
10  
0
300 400 500 600 700 800 900 1000 1100  
300 400 500 600 700 800 900 1000 1100  
diF /dt [A/µs]  
diF /dt [A/µs]  
Fig. 9 Typ. peak reverse current IRM vs. di/dt  
Fig. 10 Typ. recovery time trr versus di/dt  
10  
2.0  
TVJ = 125°C  
VR = 600 V  
1.6  
1.2  
0.8  
0.4  
0.0  
Diode  
60 A  
30 A  
1
IGBT  
Erec  
ZthJC  
[mJ]  
[K/W]  
15 A  
0.1  
0.01  
0.001  
0.01  
0.1  
tp [s]  
1
10  
300 400 500 600 700 800 900 1000 1100  
diF /dt [A/µs]  
Fig. 12 Typ. transient thermal impedance  
Fig.11 Typ. recovery energy Erec versus di/dt  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20100623b  
© 2010 IXYS all rights reserved  
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