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IXTT440N055T2

型号：

IXTT440N055T2

描述：

N沟道增强模式额定雪崩快速内在二极管[ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

193 K

下载PDF手册
Advance Technical Information  
TrenchT2TM  
Power MOSFET  
VDSS = 55V  
ID25 = 440A  
RDS(on) ≤ 1.8mΩ  
IXTH440N055T2  
IXTT440N055T2  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-247 (IXTH)  
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D
D (Tab)  
S
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
55  
55  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
TO-268 (IXTT)  
ID25  
ILRMS  
IDM  
TC = 25°C (Chip Capability)  
Lead Current Limit, RMS  
440  
160  
A
A
A
G
S
TC = 25°C, Pulse Width Limited by TJM  
1200  
D (Tab)  
IA  
TC = 25°C  
TC = 25°C  
TC = 25°C  
200  
1.5  
A
J
EAS  
PD  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
1000  
W
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +175  
Features  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z International Standard Packages  
z 175°C Operating Temperature  
z High Current Handling Capability  
z Avalanche Rated  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-247  
TO-268  
6
4
g
g
z Fast Intrinsic Diode  
z
Low RDS(on)  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z
Easy to Mount  
Space Savings  
High Power Density  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
55  
V
V
z
z
2.0  
4.0  
±200 nA  
Applications  
IDSS  
10 μA  
z
TJ = 150°C  
VGS = 10V, ID = 100A, Notes 1 & 2  
750 μA  
DC/DC Converters and Off-line UPS  
Primary- Side Switch  
High Current Switching Applications  
z
RDS(on)  
1.8 mΩ  
z
DS100220(12/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTH440N055T2  
IXTT440N055T2  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXTH) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
85  
140  
S
Ciss  
Coss  
Crss  
25  
3370  
645  
nF  
pF  
pF  
∅ P  
1
2
3
RGi  
Gate Input Resistance  
1.24  
Ω
td(on)  
tr  
td(off)  
tf  
26  
28  
72  
62  
ns  
ns  
ns  
ns  
Resistive Switching Times  
e
V
GS = 10V, VDS = 0.5 • VDSS, ID = 200A  
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
RG = 1Ω (External)  
3 - Source  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
Qg(on)  
Qgs  
405  
92  
nC  
nC  
nC  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
102  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
RthJC  
RthCH  
0.15 °C/W  
°C/W  
TO-247  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Source-Drain Diode  
.780 .800  
.177  
Symbol  
Test Conditions  
Characteristic Values  
∅P 3.55  
Q
3.65  
.140 .144  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IS  
VGS = 0V  
440  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
1400  
1.2  
TO-268 (IXTT) Outline  
trr  
76  
3.7  
ns  
A
IF = 100A, VGS = 0V  
IRM  
QRM  
-di/dt = 100A/μs  
VR = 27.5V  
140  
nC  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Includes lead resistance.  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTH440N055T2  
IXTT440N055T2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
400  
350  
300  
250  
200  
150  
100  
50  
350  
300  
250  
200  
150  
100  
50  
VGS = 15V  
VGS = 15V  
10V  
10V  
7V  
7V  
6V  
5V  
6V  
5V  
4V  
4V  
0
0
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized vs. Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
350  
300  
250  
200  
150  
100  
50  
VGS = 15V  
VGS = 10V  
10V  
8V  
7V  
I
D < 440A  
6V  
5V  
4V  
3V  
0
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 6. Drain Current vs. Case Temperature  
Fig. 5. RDS(on) Normalized vs. Drain Current  
180  
160  
140  
120  
100  
80  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
External Lead Current limit  
TJ = 175ºC  
VGS = 10V  
15V  
60  
TJ = 25ºC  
40  
20  
0
0
50  
100  
150  
200  
250  
300  
350  
400  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTH440N055T2  
IXTT440N055T2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
TJ = - 40ºC  
240  
200  
160  
120  
80  
25ºC  
150ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
60  
40  
40  
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
350  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 27.5V  
I
I
D = 220A  
G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
0
50  
100  
150  
200  
250  
300  
350  
400  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
10,000  
1,000  
100  
10  
100,000  
10,000  
1,000  
100  
R
Limit  
DS(on)  
C
iss  
25µs  
100µs  
External Lead Limit  
C
oss  
1ms  
T
T
= 175ºC  
= 25ºC  
J
10ms  
C
rss  
100ms  
C
DC  
= 1 MHz  
5
f
Single Pulse  
1
0
10  
15  
20  
25  
30  
35  
40  
0.1  
1
10  
100  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTH440N055T2  
IXTT440N055T2  
Fig. 14. Resistive Turn-on  
Fig. 13. Resistive Turn-on  
Rise Time vs. Drain Current  
Rise Time vs. Junction Temperature  
70  
60  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
RG = 1ꢀ , VGS = 10V  
DS = 27.5V  
100A < I D < 200A  
RG = 1Ω , VGS = 10V  
DS = 27.5V  
V
V
TJ = 125ºC  
TJ = 25ºC  
40  
60  
80  
100  
120  
140  
160  
180  
200  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
400  
350  
300  
250  
200  
150  
100  
50  
90  
90  
80  
70  
60  
50  
40  
30  
20  
120  
110  
100  
90  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 27.5V  
tf  
t
d(off) - - - -  
RG = 1Ω, VGS = 10V  
DS = 27.5V  
80  
70  
60  
50  
40  
30  
20  
10  
V
V
I D = 200A  
I D = 200A  
I D = 100A  
80  
I D = 100A  
70  
60  
50  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
800  
700  
600  
500  
400  
300  
200  
100  
0
450  
400  
350  
300  
250  
200  
150  
100  
50  
80  
70  
60  
50  
40  
30  
140  
120  
100  
80  
tf  
t
d(off) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 27.5V  
t f  
t
d(off) - - - -  
RG = 1ꢀ, VGS = 10V  
DS = 27.5V  
I D = 200A  
V
V
I D = 100A  
TJ = 25ºC, 125ºC  
60  
40  
1
2
3
4
5
6
7
8
9
10  
40  
60  
80  
100  
120  
140  
160  
180  
200  
ID - Amperes  
RG - Ohms  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTH440N055T2  
IXTT440N055T2  
Fig. 19. Maximum Transient Thermal Impedance  
dfafas  
0.300  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_440N055T2(98)12-11-09  
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