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IXTP12N50PM

型号：

IXTP12N50PM

描述：

PolarTM功率MOSFET[ PolarTM Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

119 K

下载PDF手册
PolarTM Power MOSFET  
VDSS = 500V  
ID25 = 6A  
IXTP12N50PM  
RDS(on) ≤ 500mΩ  
(Electrically Isolated Tab)  
trr  
≤ 300ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
OVERMOLDED TO-220  
(IXTP...M) OUTLINE  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1 MΩ  
500  
500  
V
V
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
Isolated Tab  
G
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
6
30  
A
A
D
S
IA  
EAS  
TC = 25°C  
TC = 25°C  
12  
600  
A
mJ  
G = Gate  
S = Source  
D = Drain  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ =150°C  
TC = 25°C  
10  
50  
V/ns  
W
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
Features  
ꢀPlastic overmolded tab for electrical  
isolation  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
ꢀInternational standard package  
ꢀUnclamped Inductive Switching (UIS)  
rated  
Md  
Mounting torque  
1.13/10 Nm/lb.in.  
Weight  
2.5  
g
ꢀLow package inductance  
- easy to drive and to protect  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
ꢀ
(TJ = 25°C, unless otherwise specified)  
Easy to mount  
ꢀ
Space savings  
BVDSS  
VGS(th)  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
500  
V
V
3.0  
5.5  
IGSS  
IDSS  
VGS = ±30V, VDS = 0V  
±100 nA  
VDS = VDSS  
VGS = 0V  
5 μA  
250 μA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 6A, Note 1  
500 mΩ  
© 2008 IXYS CORPORATION, All rights reserved  
DS99448F(04/08)  
IXTP12N50PM  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
ISOLATED TO-220 (IXTP...M)  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 10V, ID = 6A, Note 1  
7.5  
13  
S
Ciss  
Coss  
Crss  
1830  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
182  
16  
1
2
3
td(on)  
tr  
td(off)  
tf  
22  
27  
65  
20  
ns  
ns  
ns  
ns  
VGS = 10V, VDS = 0.5  
ꢀ
VDSS, ID = 6A  
RG = 10Ω (External)  
Qg(on)  
Qgs  
29  
11  
10  
nC  
nC  
nC  
VGS= 10V, VDS = 0.5  
ꢀ
VDSS, ID = 6A  
Qgd  
Terminals: 1 - Gate  
2 - Drain (Collector)  
RthJC  
2.5 °C/W  
3 - Source (Emitter)  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Symbol  
IS  
Test Conditions  
VGS = 0V  
Min.  
Typ.  
Max.  
12  
A
A
V
ISM  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
48  
1.5  
300  
VSD  
trr  
QRM  
IRM  
ns  
μC  
A
IF = 6A, -di/dt = 150A/μs,  
VR = 100V, VGS = 0V  
2.8  
18.2  
Notes:1. Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2 %.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTP12N50PM  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25 C  
º
@ 25 C  
º
12  
10  
8
30  
27  
24  
21  
18  
15  
12  
9
V
GS  
= 10V  
V
= 10V  
8V  
GS  
7V  
6
7V  
4
6
2
6V  
6V  
4
3
0
0
0
1
2
3
5
6
7
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
V
- Volts  
D S  
Fig. 3. Output Characteristics  
Fig. 4. RDS(on) Normalized to ID = 6A Value  
vs. Junction Temperature  
@ 125 C  
º
12  
10  
8
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
= 10V  
7V  
GS  
V
=10 V  
GS  
I = 12A  
D
6
I
D
= 6A  
6V  
4
2
5V  
8
0
0
2
4
6
VD S - Volts  
10  
12  
-50 -25  
0
25  
TJ - Degrees Centigrade  
50  
75  
100 125 150  
Fig. 5. RDS(on) Normalized to ID = 6A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case  
Temperature  
7
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
6
5
4
3
2
1
0
V
GS  
= 10V  
T = 125 C  
º
J
T = 25 C  
º
J
0
3
6
9
12 15 18 21 24 27 30  
I D - Amperes  
-50  
-25  
0
25  
50  
TC - Degrees Centigrade  
75  
100 125 150  
© 2008 IXYS CORPORATION, All rights reserved  
IXTP12N50PM  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
20  
18  
16  
14  
12  
10  
8
27  
24  
21  
18  
15  
12  
9
T = - 40 C  
º
J
25 C  
º
125 C  
º
T = 125 C  
º
25ºC  
- 40ºC  
J
6
6
4
3
2
0
0
0
2
4
6
8
10 12 14 16 18 20  
4.5  
5.0  
5.5 6.0  
VG S - Volts  
6.5  
7.0  
7.5  
I D - Amperes  
Fig. 9. Source Current vs. Source-To-Drain  
Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
35  
30  
25  
20  
15  
10  
5
V
= 250V  
DS  
I = 6A  
D
I
G
= 10mA  
T = 125 C  
º
J
T = 25 C  
º
J
0
0
3
6
9
12 15 18 21 24 27 30  
0.4  
0.5  
0.6 0.7  
VS D - Volts  
0.8  
0.9  
1.0  
Q G - nanoCoulombs  
Fig. 12. Forward-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
10000  
1000  
100  
100  
10  
1
f
=1M Hz  
R
Limit  
DS(on)  
C
iss  
25µs  
100µs  
1ms  
C
oss  
10ms  
T = 150ºC  
J
DC  
C
rss  
T
= 25ºC  
C
0.1  
10  
10  
100  
VD S - Volts  
1000  
0
5
10  
15  
20  
VD S - Volts  
25  
30  
35  
40  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTP12N50PM  
Fig. 13. Maximum Transient Thermal Impedance  
10.00  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS REF: T_12N50P(4J)4-14-08-D  
© 2008 IXYS CORPORATION, All rights reserved  
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