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IXTY44N10T

型号:

IXTY44N10T

描述:

TrenchMVTM功率MOSFET[ TrenchMVTM Power MOSFET ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

5 页

PDF大小:

203 K

Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
IXTP44N10T  
IXTY44N10T  
VDSS = 100  
ID25 = 44  
RDS(on) 30 mΩ  
V
A
N-Channel Enhancement Mode  
Avalanche Rated  
TO-220 (IXTP)  
D (TAB)  
G
D
S
TO-252 AA (IXTY)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25° C to 175° C  
TJ = 25° C to 175° C; RGS = 1 MΩ  
100  
100  
V
V
G
VGSM  
Transient  
30  
V
S
D (TAB)  
ID25  
IL  
IDM  
TC = 25° C  
44  
25  
140  
A
A
A
Package Current Limit, RMS  
TO-252A  
G = Gate  
S = Source  
D = Drain  
TC = 25° C, pulse width limited by TJM  
TAB = Drain  
IAR  
EAS  
TC = 25° C  
TC = 25° C  
10  
250  
A
mJ  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 175° C, RG = 18 Ω  
3
V/ns  
Features  
Ultra-low On Resistance  
Unclamped Inductive Switching (UIS)  
rated  
TC = 25° C  
130  
W
Low package inductance  
- easy to drive and to protect  
175 ° C Operating Temperature  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-40 ... +175  
°C  
°C  
°C  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Advantages  
Easy to mount  
Space savings  
Md  
Mounting torque (TO-220)  
1.13 / 10 Nm/lb.in.  
High power density  
Weight  
TO-220  
TO-252  
3
0.8  
g
g
Applications  
Automotive  
- Motor Drives  
- 42V Power Bus  
Symbol  
Test Conditions  
Characteristic Values  
- ABS Systems  
(TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
DC/DC Converters and Off-line UPS  
Primary Switch for 24V and 48V  
Systems  
Distributed Power Architechtures  
and VRMs  
Electronic Valve Train Systems  
High Current Switching  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 25 µA  
85  
V
V
2.5  
4.5  
VGS  
=
20 V, VDS = 0 V  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
1
100  
µA  
µA  
TJ = 150° C  
High Voltage Synchronous Recifier  
RDS(on)  
VGS = 10 V, ID = 22 A, Notes 1, 2  
22  
30 m Ω  
DS99646 (11/06)  
© 2006 IXYS CORPORATION All rights reserved  
IXTP44N10T  
IXTY44N10T  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-220 (IXTP) Outline  
(TJ = 25°C unless otherwise specified)  
gfs  
VDS= 10 V; ID = 0.5 ID25, Note 1  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
13  
21  
S
Ciss  
Coss  
Crss  
1262  
190  
43  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A  
RG = 18 (External)  
21  
47  
36  
32  
ns  
ns  
ns  
ns  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
Qg(on)  
Qgs  
33  
10  
11  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 10 A  
Qgd  
RthJC  
RthCS  
1.15°C/W  
°C/W  
TO-220  
0.5  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
TJ = 25° C unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0 V  
44  
A
A
ISM  
VSD  
trr  
Repetitive  
140  
1.1  
Notes:  
IF = 25 A, VGS = 0 V, Note 1  
V
1. Pulse test: t 300 µs, duty cycle  
d 2 %;  
IF = 25 A, -di/dt = 100 A/µs  
100  
ns  
2. On through-hole packages, RDS(on)  
Kelvin test contact location must be  
5 mm or less from the package body.  
VR = 50 V, VGS = 0 V  
TO-252 (IXTY) Outline  
Dim. Millimeter  
Inches  
Min. Max. Min.  
Max.  
PRELIMINARYTECHNICAL  
INFORMATION  
A
2.19 2.38 0.086 0.094  
A1 0.89 1.14 0.035 0.045  
A2  
b
0
0.13  
0
0.005  
0.64 0.89 0.025 0.035  
b1  
b2  
0.76 1.14 0.030 0.045  
5.21 5.46 0.205 0.215  
The product presented herein is under  
development. The Technical Specifica-  
tions offered are derived from data  
gathered during objective characteriza-  
tions of preliminary engineering lots; but  
also may yet contain some information  
supplied during a pre-production design  
evaluation. IXYS reserves the right to  
change limits, test conditions, and  
dimensions without notice.  
c
c1  
0.46 0.58 0.018 0.023  
0.46 0.58 0.018 0.023  
D
5.97 6.22 0.235 0.245  
D1 4.32 5.21 0.170 0.205  
6.35 6.73 0.250 0.265  
E1 4.32 5.21 0.170 0.205  
1 Anode  
2 NC  
3 Anode  
4 Cathode  
E
e
e1  
2.28 BSC  
4.57 BSC  
0.090 BSC  
0.180 BSC  
H
L
9.40 10.42 0.370 0.410  
0.51 1.02 0.020 0.040  
L1  
L2  
L3  
0.64 1.02 0.025 0.040  
0.89 1.27 0.035 0.050  
2.54 2.92 0.100 0.115  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463  
7,005,734 B2  
7,063,975 B2  
6771478 B2 7,071,537  
IXTP44N10T  
IXTY44N10T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
45  
40  
35  
30  
25  
20  
15  
10  
5
120  
100  
80  
60  
40  
20  
0
V
= 10V  
V
= 10V  
GS  
GS  
9V  
8V  
9V  
8V  
7V  
6V  
7V  
6V  
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 22A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
I
= 44A  
D
I
= 22A  
D
6V  
5V  
0
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
3.2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 22A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
4.2  
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
15V  
T = 175ºC  
J
GS  
- - - -  
External Lead Current Limit for TO-252  
T = 25ºC  
J
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
10  
20  
30  
40  
50  
60  
70  
80  
90 100 110  
ID - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS CORPORATION All rights reserved  
IXTP44N10T  
IXTY44N10T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
70  
60  
50  
40  
30  
20  
10  
0
30  
27  
24  
21  
18  
15  
12  
9
T
J
= - 40ºC  
T
J
= -40ºC  
25ºC  
150ºC  
25ºC  
150ºC  
6
3
0
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
9
0
10  
20  
30  
40  
50  
60  
70  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
120  
100  
80  
60  
40  
20  
0
10  
9
8
7
6
5
4
3
2
1
0
V
= 50V  
DS  
I
I
= 10A  
D
G
= 1mA  
T
J
= 150ºC  
T
J
= 25ºC  
0
5
10  
15  
20  
25  
30  
35  
0.4 0.5 0.6 0.7 0.8 0.9  
1
1.1 1.2 1.3 1.4 1.5  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
10.00  
1.00  
0.10  
0.01  
f = 1 MHz  
C
C
iss  
oss  
C
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTP44N10T  
IXTY44N10T  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
R
= 18  
G
R
V
V
= 18  
G
V
V
= 10V  
= 50V  
GS  
DS  
= 10V  
= 50V  
GS  
DS  
T = 25ºC  
J
I
= 30A  
D
I
= 10A  
35  
T = 125ºC  
J
D
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
25  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
130  
40  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
18  
35  
50  
47  
44  
41  
38  
35  
32  
29  
26  
23  
t f  
R
td(off)  
- - - -  
t r  
td(on)  
- - - -  
120  
110  
100  
90  
34  
33  
32  
31  
30  
29  
28  
27  
26  
= 18 , V = 10V  
G
GS  
TJ = 125ºC, V = 10V  
GS  
V
= 50V  
DS  
V
= 50V  
DS  
I
= 10A  
D
I
= 30A  
D
80  
I
= 10A  
D
70  
60  
50  
I
= 30A  
D
40  
30  
20  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
33  
32  
31  
30  
29  
28  
27  
26  
50  
46  
42  
38  
34  
30  
26  
22  
100  
110  
100  
90  
tf  
td(off)  
- - - -  
= 18 , VGS = 10V  
tf  
td(off)  
- - - -  
90  
80  
70  
60  
50  
40  
30  
20  
R
G
T = 125ºC, VGS = 10V  
J
VDS = 50V  
VDS = 50V  
TJ = 125ºC  
80  
70  
I
= 10A  
D
60  
50  
T = 25ºC  
J
I
= 30A  
D
40  
30  
10  
12 14  
16  
18  
20  
22  
24  
26  
28  
30  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
RG - Ohms  
ID - Amperes  
IXYS REF: T_44N10T (1V) 9-15-06-A.xls  
© 2006 IXYS CORPORATION All rights reserved  
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