IXTY08N100D2 IXTA08N100D2
IXTP08N100D2
Symbol
Test Conditions
Characteristic Values
TO-252 AA (IXTY) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 30V, ID = 400mA, Note 1
VGS = -10V, VDS = 25V, f = 1MHz
330
560
mS
Ciss
Coss
Crss
325
24
pF
pF
pF
6.5
td(on)
tr
td(off)
tf
28
57
34
48
ns
ns
ns
ns
Resistive Switching Times
VGS = ±5V, VDS = 500V, ID = 400mA
RG = 10Ω (External)
1. Gate
2. Drain
3. Source
Qg(on)
Qgs
14.6
1.2
nC
nC
nC
Dim. Millimeter
Min. Max.
Inches
Min. Max.
VGS = 5V, VDS = 500V, ID = 400mA
A
2.19 2.38 0.086 0.094
0.89 1.14 0.035 0.045
Qgd
8.3
A1
A2
b
0
0.13
0
0.005
RthJC
RthCS
2.08 °C/W
°C/W
0.64 0.89 0.025 0.035
TO-220
0.50
b1
b2
0.76 1.14 0.030 0.045
5.21 5.46 0.205 0.215
c
c1
0.46 0.58 0.018 0.023
0.46 0.58 0.018 0.023
Safe-Operating-Area Specification
D
D1
5.97 6.22 0.235 0.245
4.32 5.21 0.170 0.205
Characteristic Values
E
E1
6.35 6.73 0.250 0.265
4.32 5.21 0.170 0.205
Symbol
SOA
Test Conditions
Min.
Typ.
Max.
e
e1
2.28 BSC
4.57 BSC
0.090 BSC
0.180 BSC
VDS = 800V, ID = 45mA, TC = 75°C, Tp = 5s
36
W
H
L
9.40 10.42 0.370 0.410
0.51 1.02 0.020 0.040
L1
L2
L3
0.64 1.02 0.025 0.040
0.89 1.27 0.035 0.050
2.54 2.92 0.100 0.115
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
TO-220 (IXTP) Outline
VSD
IF = 800mA, VGS = -10V, Note 1
0.8
1.3
V
trr
IRM
QRM
1.03
7.40
3.80
μs
A
μC
IF = 800mA, -di/dt = 100A/μs
VR = 100V, VGS = -10V
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-263 (IXTA) Outline
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
E
9.65
10.41
.380
.405
E1
e
L
L1
L2
L3
L4
6.22
2.54
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100 BSC
.320
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
14.61
2.29
1.02
1.27
0
.575
.090
.040
.050
0
.625
.110
.055
.070
.005
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
