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IXTN60N50L2

型号：

IXTN60N50L2

描述：

N沟道增强模式[ N-Channel Enhancement Mode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

135 K

下载PDF手册
Preliminary Technical Information  
Linear L2TM Power  
MOSFET  
VDSS = 500V  
ID25 = 53A  
RDS(on) ≤ 100mΩ  
IXTN60N50L2  
N-Channel Enhancement Mode  
Extended FBSOA  
miniBLOC, SOT-227  
E153432  
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
500  
500  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
S
D
D = Drain  
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
53  
A
A
150  
G = Gate  
S = Source  
IA  
TC = 25°C  
TC = 25°C  
60  
3
A
J
EAS  
Either source terminal S can be used as the  
source terminal or the Kelvin source (gate  
return) terminal.  
PD  
TC = 25°C  
735  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
• Designed for linear operation  
• International standard package  
• Molding epoxy meets UL94 V-0  
flammability classification  
• miniBLOC with Aluminium nitride  
isolation  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
VISOL  
50/60 Hz, RMS  
IISOL ≤ 1mA  
t = 1 minute  
t = 1 second  
2500  
3000  
V~  
V~  
Md  
Mounting torque  
Terminal Connection torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Applications  
Weight  
30  
g
• Programmable loads  
• Current regulators  
• DC-DC converters  
• Battery chargers  
• DC choppers  
• Temperature and lighting controls  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
Advantages  
(TJ = 25°C, unless otherwise specified)  
• Easy to mount  
• Space savings  
• High power density  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 250μA  
VGS = ±30V, VDS = 0V  
500  
2.5  
V
4.5  
V
±200 nA  
50 μA  
IDSS  
VDS = VDSS  
VGS = 0V  
TJ = 125°C  
5
mA  
RDS(on)  
VGS = 10V, ID = 30A Note 1  
100 mΩ  
DS100086(12/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXTN60N50L2  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXTN) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 30A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
18  
25  
32  
S
Ciss  
Coss  
Crss  
24  
1325  
172  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
40  
40  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 15V, VDS = 0.5 • VDSS, ID = 30A  
165  
38  
RG = 0.5Ω (External)  
Qg(on)  
Qgs  
610  
130  
365  
nC  
nC  
nC  
(M4 screws (4x) supplied)  
VGS = 10V, VDS = 0.5 • VDSS, ID = 30A  
Qgd  
RthJC  
RthCS  
0.17 °C/W  
°C/W  
0.05  
Safe Operating Area Specification  
Symbol  
SOA  
Test Conditions  
Min.  
Typ.  
Max.  
VDS = 400V, ID = 0.9A, TC = 75°C, tp = 3s  
360  
W
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
60  
A
A
V
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
240  
1.5  
trr  
IRM  
980  
73  
ns  
A
IF = 60A, -di/dt = 100A/μs  
VR = 100V, VGS = 0V  
QRM  
35.8  
μC  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTN60N50L2  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
160  
140  
120  
100  
80  
VGS = 20V  
14V  
12V  
VGS = 20V  
14V  
12V  
10V  
9V  
8V  
10V  
9V  
60  
7V  
8V  
40  
7V  
6V  
6V  
5V  
20  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 30A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 20V  
12V  
10V  
VGS = 10V  
9V  
8V  
7V  
I D = 60A  
I D = 30A  
6V  
5V  
0
0
1
2
3
4
5
6
7
8
9
10  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 30A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
20V  
- - - -  
TJ = 125ºC  
TJ = 25ºC  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: T_60N50L2(9R)01-20-09-C  
IXTN60N50L2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90 100 110  
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
16  
14  
12  
10  
8
200  
180  
160  
140  
120  
100  
80  
VDS = 250V  
I D = 30A  
I G = 10mA  
6
TJ = 125ºC  
60  
4
TJ = 25ºC  
40  
2
20  
0
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
100  
200  
300  
400  
500  
600  
700  
800  
900  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1.000  
0.100  
0.010  
0.001  
= 1 MHz  
f
C
iss  
C
oss  
C
rss  
0
5
10  
15  
20  
25  
30  
35  
40  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
Pulse Width - Seconds  
IXTN60N50L2  
Fig. 13. Forward-Bias Safe Operating Area  
Fig. 14. Forward-Bias Safe Operating Area  
@ T = 25ºC  
C
@ T = 75ºC  
C
1,000.0  
100.0  
10.0  
1.0  
1,000.0  
100.0  
10.0  
1.0  
RDS(on) Limit  
RDS(on) Limit  
25µs  
25µs  
100µs  
100µs  
1ms  
1ms  
10ms  
10ms  
100ms  
100ms  
DC  
T
= 150ºC  
T
= 150ºC  
J
J
DC  
TC = 25ºC  
Single Pulse  
TC = 75ºC  
Single Pulse  
0.1  
0.1  
10  
100  
1000  
10  
100  
1000  
VDS - Volts  
VDS - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: T_60N50L2(9R)01-20-09-C  
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