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Product specification
2SK3113
Features
TO-252
Unit: mm
Low on-state resistance
+0.15
-0.15
+0.1
2.30
-0.1
6.50
RDS(on) = 4.4
MAX. (VGS = 10 V, ID = 1.0 A)
+0.2
5.30
-0.2
+0.8
0.50
-0.7
Low gate charge
QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)
Gate voltage rating 30 V
Avalanche capability ratings
0.127
max
+0.1
0.80
-0.1
+0.1
0.60
-0.1
2.3
4.60
1 Gate
+0.15
-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
600
Unit
V
Gate to source voltage
V
30
A
2.0
Drain current
Idp *
A
8.0
20
Power dissipation
TC=25
TA=25
PD
W
1.0
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Symbol
Testconditons
VDS=600V,VGS=0
Min
Typ
Max
100
10
Unit
A
IDSS
IGSS
VGS(off)
Yfs
VGS= 30V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=1.0A
VGS=10V,ID=1.0A
A
2.5
0.5
3.5
V
S
RDS(on)
Ciss
Coss
Crss
ton
3.3
260
60
5
4.4
pF
pF
pF
ns
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
Output capacitance
Reverse transfer capacitance
Turn-on delay time
7
Rise time
tr
2
ID=1.0A,VGS(on)=10V,VDD=150V,RG=10
,RL=10
Turn-off delay time
toff
22
9
Fall time
tf
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