SMMDD TTyyppee
TransistIoCrs
Product specification
2SK3050
TO-252
Unit: mm
+0.15
-0.15
Features
+0.1
2.30
-0.1
6.50
+0.2
5.30
-0.2
+0.8
0.50
-0.7
Low on-resistance.
Fast switching speed.
Wide SOA (safe operating area).
0.127
max
+0.1
0.80
-0.1
Gate-source voltage (VGSS) guaranteed to be 30V.
Easily designed drive circuits.
+0.1
0.60
-0.1
1. Gate
Easy to use in parallel.
2.3
4.60
+0.15
-0.15
2. Drain
3. Source
Silicon N-channel MOSFET
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Symbol
VDSS
VGSS
ID
Rating
600
30
2
Unit
V
Gate to Source Voltage
V
Drain Current(DC)
A
Drain Current (pulse) *
IDP
6
A
Body to drain diode reverse drain current
Body to drain diode reverse drain current(pulse) *
IDR
2
A
IDRP
PD
6
A
20
150
W
Total power dissipation (Tc=25
Channel Temperature
)
Tch
Tstg
Storage temperature
-55 to +150
* PW 10ìs,Dduty cycle 1%.
Electrical Characteristics Ta = 25
Parameter
Symbol
IGSS
V(BR)DSS ID=1mA, VGS=0V
IDSS VDS=600V, VGS=0V
Testconditons
Min
600
2.0
0.5
Typ
Max
100
Unit
nA
V
Gate to source leak current
Drain to source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static Drain to source on stateresistance
Forward transfer admittance
Input capacitance
VGS= 30V, VDS=0V
100
4.0
5.5
A
VGSth VDS=10V, ID=1mA
RDS(on) ID=1A, VGS=10V
V
4.4
1.0
280
48
|yfs|
Ciss
Coss
Crss
td(on)
tr
ID=1A, VDS=10V
VDS=10V
S
pF
pF
pF
ns
ns
ns
ns
ns
C
Output capacitance
VGS=0V
Reverse transfer capacitance
Turn-on delay time
f=1MHz
16
VGS=10V
12
Rise time
17
RL=300
Turn-off delay time
td(off)
tf
29
RG=10
Fall time
ID=1A, VDD=300V
IDR=2A, VGS=0V
105
460
2.0
Reverse recovery time
Reverse recovery charge
trr
Qrr
di/dt=100A/
s
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