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IXTH280N055T

型号：

IXTH280N055T

描述：

N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

146 K

下载PDF手册
TrenchMVTM  
Power MOSFET  
VDSS = 55V  
ID25 = 280A  
RDS(on) ≤ 3.2mΩ  
IXTH280N055T  
IXTQ280N055T  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-247 (IXTH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
55  
55  
V
V
D
(TAB)  
S
VDGR  
VGSM  
Transient  
± 20  
V
TO-3P (IXTQ)  
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
280  
75  
A
A
A
600  
IA  
TC = 25°C  
TC = 25°C  
TC = 25°C  
40  
1.5  
A
J
G
D
EAS  
PD  
S
(TAB)  
550  
W
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +175  
G = Gate  
S = Source  
D
TAB  
=
=
Drain  
Drain  
TL  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Features  
Md  
Mountingtorque(TO-247)(TO-3P)  
1.13 / 10  
Nm/lb.in.  
ꢀInternationalstandardpackages  
ꢀ175°COperatingTemperature  
ꢀAvalancheRated  
Weight  
TO-247  
TO-3P  
6.0  
5.5  
g
g
ꢀ
Low RDS(on)  
Advantages  
ꢀ
Symbol  
Test Conditions  
Characteristic Values  
Easy to mount  
Space savings  
Highpowerdensity  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
ꢀ
ꢀ
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
55  
V
V
2.0  
4.0  
Applications  
±200 nA  
μA  
ꢀ
Automotive  
IDSS  
VDS = VDSS  
VGS = 0V  
5
- MotorDrives  
- High Side Switch  
- 12VBattery  
TJ = 150°C  
250 μA  
3.2 mΩ  
RDS(on)  
VGS = 10V, ID = 50A, Notes 1, 2  
2.6  
- ABS Systems  
ꢀ
DC/DC Converters and Off-line UPS  
Primary - Side Switch  
High Current Switching Applications  
ꢀ
ꢀ
DS99630A(07/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXTH280N055T  
IXTQ280N055T  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-247 (IXTH) Outline  
(TJ = 25°C, unless otherwise specified)  
gfs  
VDS = 10V, ID = 60A, Note 1  
60  
107  
S
Ciss  
Coss  
Crss  
9700  
1540  
265  
pF  
pF  
pF  
∅P  
VGS = 0V, VDS = 25V, f = 1MHz  
1
2
3
td(on)  
tr  
td(off)  
tf  
32  
55  
49  
37  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 50A  
e
RG = 3.3Ω (External)  
Terminals: 1 - Gate  
2 - Drain  
Qg(on)  
Qgs  
200  
50  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
53  
RthJC  
RthCH  
0.27 °C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
(TO-247)(TO-3P)  
0.25  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
280  
600  
1.0  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
IS  
VGS = 0V  
A
A
R
4.32  
5.49 .170 .216  
ISM  
VSD  
trr  
Repetitive, Pulse width limited by TJM  
IF = 50A, VGS = 0V, Note 1  
V
TO-3P (IXTQ) Outline  
IF = 140A, VGS = 0V  
54  
ns  
-di/dt = 100A/μs, VR = 25V  
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463 6,771,478 B2 7,071,537  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
IXTH280N055T  
IXTQ280N055T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
350  
300  
250  
200  
150  
100  
50  
280  
240  
200  
160  
120  
80  
VGS = 10V  
VGS = 10V  
9V  
8V  
9V  
8V  
7V  
6V  
7V  
6V  
40  
5V  
5V  
0
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
175  
175  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 140A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
280  
240  
200  
160  
120  
80  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = 10V  
VGS = 10V  
9V  
8V  
7V  
6V  
I D = 280A  
I D = 140A  
5V  
40  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 140A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
External Lead Current Limit  
TJ = 175ºC  
VGS = 10V  
15V  
- - - -  
TJ = 25ºC  
0
50  
100  
150  
200  
250  
300  
350  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXTH280N055T  
IXTQ280N055T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
250  
225  
200  
175  
150  
125  
100  
75  
160  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
150ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
60  
40  
50  
20  
25  
0
0
0
25  
50  
75 100 125 150 175 200 225 250 275  
ID - Amperes  
3
3.5  
4
4.5  
5
5.5  
6
6.5  
VGS - Volts  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
330  
300  
270  
240  
210  
180  
150  
120  
90  
VDS = 27.5V  
I D = 25A  
I G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
60  
30  
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
0
20  
40  
60  
80  
100 120 140 160 180 200  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
f = 1 MHz  
C
iss  
C
oss  
C
rss  
0
5
10  
15  
20  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
Pulse Width - Seconds  
IXYS REF: T_280N055T(6V)8-05-08-A  
IXTH280N055T  
IXTQ280N055T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
60  
55  
50  
45  
40  
35  
30  
25  
20  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
RG = 3.3  
Ω
TJ = 25ºC  
VGS = 10V  
VDS = 27.5V  
RG = 3.3  
Ω
VGS = 10V  
VDS = 27.5V  
I D = 50A  
I D = 25A  
TJ = 125ºC  
24 26 28 30 32 34 36 38 40 42 44 46 48 50  
ID - Amperes  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
200  
180  
160  
140  
120  
100  
80  
80  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
57  
95  
t f  
td(off) - - - -  
RG = 3.3 , VGS = 10V  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGS = 10V  
55  
53  
51  
49  
47  
45  
43  
41  
39  
37  
35  
90  
85  
80  
75  
70  
65  
60  
55  
50  
45  
40  
Ω
VDS = 27.5V  
VDS = 27.5V  
I D = 25A  
I D = 50A  
I D = 50A  
I D = 25A  
60  
40  
20  
0
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
2
4
6
8
10  
12  
14  
16  
18  
20  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
240  
220  
200  
180  
160  
140  
120  
100  
80  
370  
340  
310  
280  
250  
220  
190  
160  
130  
100  
70  
57  
54  
51  
48  
45  
42  
39  
36  
33  
30  
90  
85  
80  
75  
70  
65  
60  
55  
50  
45  
t f  
t
d(off) - - - -  
TJ = 125ºC, VGS = 10V  
TJ = 125ºC  
VDS = 27.5V  
t f  
t
d(off) - - - -  
RG = 3.3 , VGS = 10V  
Ω
VDS = 27.5V  
I D = 25A  
I D = 50A  
TJ = 25ºC  
60  
40  
2
4
6
8
10  
12  
14  
16  
18  
20  
24 26 28 30 32 34 36 38 40 42 44 46 48 50  
ID - Amperes  
RG - Ohms  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: T_280N055T(6V)8-05-08-A  
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