IXTA60N20T IXTP60N20T
IXTQ60N20T
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
TO-220 (IXTP) Outline
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
40
62
S
Ciss
Coss
Crss
4530
490
72
pF
pF
pF
td(on)
tr
td(off)
tf
22
13
33
22
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
Qg(on)
Qgs
73
22
22
nC
nC
nC
Pins: 1 - Gate
3 - Source
2 - Drain
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
0.30 °C/W
RthCS
RthCS
TO-220
TO-3P
0.50
0.25
°C/W
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min. Typ.
Max.
IS
VGS = 0V
60
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = 60A, VGS = 0V, Note 1
240
1.3
TO-3P (IXTQ) Outline
trr
118
9.3
ns
A
IF = 0.5 • ID25, VGS = 0V
IRM
QRM
-di/dt = 100A/μs
VR = 85V
550
nC
Note
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-263 (IXTA) Outline
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
E
9.65
10.41
.380
.405
E1
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100 BSC
.320
1. Gate
e
2. Collector
L
.575
.090
.040
.050
0
.625
.110
.055
.070
.005
3. Emitter
L1
4. Collector
L2
Bottom Side
L3
L4
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
