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2SK4065-DL-E

型号:

2SK4065-DL-E

描述:

通用开关设备的应用[ General-Purpose Switching Device Applications ]

品牌:

ONSEMI[ ONSEMI ]

页数:

7 页

PDF大小:

407 K

Ordering number : ENA0324A  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SK4065  
Features  
ON-resistance R (on)1=4.6m (typ.)  
4V drive  
Input capacitance Ciss=12200pF (typ.)  
Ω
DS  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
75  
±20  
100  
400  
1.65  
90  
DSS  
V
V
GSS  
I
A
D
Drain Current (Pulse)  
I
PW 10 s, duty cycle 1%  
A
μ
DP  
W
W
°C  
°C  
mJ  
A
Allowable Power Dissipation  
P
D
Tc=25°C  
Channel Temperature  
Tch  
150  
Storage Temperature  
Tstg  
--55 to +150  
Avalanche Energy (Single Pulse) *1  
Avalanche Current *2  
E
735  
70  
AS  
I
AV  
Note : 1 V =30V, L=200 H, I =70A (Fig.1)  
*
μ
DD  
2 L 200 H, single pulse  
AV  
*
μ
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
• Package  
: TO-263-2L  
7535-001  
• JEITA, JEDEC  
: SC-83, TO-263  
• Minimum Packing Quantity : 800 pcs./reel  
2SK4065-DL-1E  
Packing Type: DL  
Marking  
4.5  
10.0  
8.0  
1.3  
4
K4065  
LOT No.  
5.3  
DL  
0.254  
0.5  
1
2
3
Electrical Connection  
1.27  
0.8  
2, 4  
2.54  
2.54  
1 : Gate  
2 : Drain  
3 : Source  
4 : Drain  
1
SANYO : TO-263-2L  
3
http://semicon.sanyo.com/en/network  
53012 TKIM TC-00002767/41006QA MSIM TB-00002239  
No. A0324-1/7  
2SK4065  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
V
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0V  
75  
(BR)DSS  
D
GS  
I
V
=75V, V =0V  
1
A
A
μ
DSS  
DS GS  
I
V
=±16V, V =0V  
±10  
2.6  
μ
GSS  
GS DS  
V
(off)  
|
V
=10V, I =1mA  
1.2  
47  
V
GS  
yfs  
DS D  
Forward Transfer Admittance  
V
I
=10V, I =50A  
D
78  
S
|
DS  
R
R
(on)1  
(on)2  
=50A, V =10V  
GS  
4.6  
5.7  
6.0  
8.0  
m
Ω
Ω
DS  
DS  
D
Static Drain-to-Source On-State Resistance  
I
D
=50A, V =4V  
GS  
m
Input Capacitance  
Ciss  
12200  
950  
730  
80  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Coss  
Crss  
V
=20V, f=1MHz  
pF  
pF  
ns  
DS  
t
t
t
t
(on)  
d
r
460  
930  
640  
220  
40  
ns  
See Fig.2  
Turn-OFF Delay Time  
Fall Time  
(off)  
ns  
d
f
ns  
Total Gate Charge  
Qg  
nC  
nC  
nC  
V
Gate-to-Source Charge  
Gate-to-Drain “Miller” Charge  
Diode Forward Voltage  
Qgs  
Qgd  
V
DS  
=35V, V =10V, I =100A  
GS  
D
50  
V
SD  
I =100A, V =0V  
S GS  
0.9  
1.2  
Fig.1 Avalanche Resistance Test Circuit  
Fig.2 Switching Time Test Circuit  
V
IN  
V =35V  
DD  
L
10V  
0V  
I
=50A  
50Ω  
D
V
IN  
R =0.7Ω  
L
D
V
OUT  
2SK4065  
PW=10μs  
D.C.1%  
10V  
50Ω  
0V  
V
DD  
G
2SK4065  
P. G  
50Ω  
S
Ordering Information  
Device  
Package  
Shipping  
memo  
Pb Free  
2SK4065-DL-1E  
TO-263-2L  
800pcs./reel  
No. A0324-2/7  
2SK4065  
I
D
-- V  
I -- V  
D GS  
DS  
200  
180  
160  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
Tc=25°C  
Single pulse  
V
=10V  
DS  
Single pulse  
V
=3V  
GS  
60  
60  
40  
40  
20  
0
20  
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
DS  
1.6  
1.8  
2.0  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
Drain-to-Source Voltage, V  
-- V  
IT10698  
Gate-to-Source Voltage, V  
GS  
-- V  
IT10699  
R
(on) -- V  
R
(on) -- Tc  
DS  
GS  
DS  
14  
12  
10  
8
30  
25  
20  
15  
10  
I =50A  
D
Single pulse  
Single pulse  
6
4
Tc=7  
5°C  
25°  
C
5
0
2
0
--50  
--25  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
7
8
9
10  
Gate-to-Source Voltage, V  
-- V  
IT10700  
Case Temperature, Tc -- °C  
IT10701  
GS  
| yfs | -- I  
I -- V  
S SD  
D
2
3
2
V
=10V  
V
=0V  
DS  
Single pulse  
GS  
100  
Single pulse  
100  
7
7
5
3
2
5
10  
3
2
7
5
3
2
1.0  
10  
7
7
5
3
2
5
0.1  
3
2
7
5
3
2
1.0  
0.01  
2
3
5
7
2
3
5
7
2
3
5
7
100  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
IT10703  
0.1  
1.0  
10  
Diode Forward Voltage, V  
SD  
-- V  
Drain Current, I -- A  
IT10702  
D
SW Time -- I  
Ciss, Coss, Crss -- V  
D
DS  
3
3
2
f=1MHz  
V
=35V  
=10V  
DD  
2
V
GS  
10k  
1000  
7
5
7
5
3
2
3
2
1k  
7
5
100  
t (on)  
d
7
5
3
2
3
5
7
2
3
5
7
2
3
5
7
0
5
10  
15  
20  
25  
30  
IT10756  
0.1  
1.0  
10  
100  
IT10704  
Drain Current, I -- A  
Drain-to-Source Voltage, V -- V  
DS  
D
No. A0324-3/7  
2SK4065  
V
-- Qg  
A S O  
GS  
10  
9
1000  
7
V
=35V  
=100A  
DS  
I
=400A(PW10μs)  
DP  
5
3
2
I
D
8
I
=100A  
D
100  
7
5
7
3
2
6
5
10  
7
Operation in  
this area is  
5
4
3
2
limited by R (on).  
DS  
3
1.0  
7
2
5
3
2
Tc=25°C  
Single pulse  
1
0
0.1  
0.1  
2
3
5
7
2
3
5
7
2
3
5
7
2
0
0
0
50  
100  
150  
200  
250  
IT10705  
1.0  
10  
100  
IT10881  
Total Gate Charge, Qg -- nC  
Drain-to-Source Voltage, V  
-- V  
DS  
P
-- Ta  
P
-- Tc  
D
D
2.0  
100  
90  
80  
70  
60  
50  
40  
30  
20  
1.65  
1.5  
1.0  
0.5  
0
10  
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta -- °C  
IT10707  
Case Temperature, Tc -- °C  
IT10708  
E
AS  
-- Ta  
120  
100  
80  
60  
40  
20  
0
25  
50  
75  
100  
125  
150  
175  
IT10709  
Ambient Temperature, Ta -- °C  
No. A0324-4/7  
2SK4065  
Taping Specication  
2SK4065-DL-1E  
No. A0324-5/7  
2SK4065  
Outline Drawing  
Land Pattern Example  
2SK4065-DL-1E  
Mass (g) Unit  
Unit: mm  
1.5  
mm  
* For reference  
No. A0324-6/7  
2SK4065  
Note on usage : Since the 2SK4065 is a MOSFET product, please avoid using this device in the vicinity  
of highly charged objects.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment. The products mentioned herein  
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,  
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal  
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten  
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they  
grant any guarantee thereof. If you should intend to use our products for new introduction or other application  
different from current conditions on the usage of automotive device, communication device, office equipment,  
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)  
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be  
solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are  
not guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an  
independent device, the customer should always evaluate and test devices mounted in the customer's  
products or equipment.  
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using  
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating  
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
Co.,Ltd. products described or contained herein.  
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,  
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute  
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a  
confirmation.  
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all  
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures  
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give  
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,  
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but  
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and  
structural design.  
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are  
controlled under any of applicable local export control laws and regulations, such products may require the  
export license from the authorities concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system, or  
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the  
SANYO Semiconductor Co.,Ltd. product that you intend to use.  
Upon using the technical information or products described herein, neither warranty nor license shall be  
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any  
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third  
party's intellectual property rights which has resulted from the use of the technical information and products  
mentioned above.  
This catalog provides information as of May, 2012. Specications and information herein are subject  
to change without notice.  
PS No. A0324-7/7  
厂商 型号 描述 页数 下载

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ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

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