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IXSH30N60B2D1

型号：

IXSH30N60B2D1

描述：

高速IGBT与二极管[ High Speed IGBT with Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

522 K

下载PDF手册
High Speed IGBT  
with Diode  
IXSH 30N60B2D1  
IXST 30N60B2D1  
VCES = 600 V  
IC25 = 48 A  
VCE(sat) = 2.5 V  
Short Circuit SOA Capability  
PreliminaryDataSheet  
Symbol  
TestConditions  
MaximumRatings  
TO-247 (IXSH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
C (TAB)  
G
C
E
IC25  
TC = 25°C  
48  
30  
28  
90  
A
A
A
A
IC110  
IF(110)  
ICM  
TC = 110°C  
TO-268 (IXST)  
TC = 25°C, 1 ms  
SSOA  
(RBSOA)  
VGE= 15 V, TJ = 125°C, RG = 10Ω  
ICM = 48  
@ 0.8 VCES  
A
µs  
W
Clamped inductive load  
G
E
C (TAB)  
tSC  
(SCSOA)  
VGE = 15 V, VCE = 360 V, TJ = 125°C  
RG = 10 Ω, non repetitive  
10  
PC  
TC = 25°C  
250  
G = Gate  
E = Emitter  
C = Collector  
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
• International standard package  
• Guaranteed Short Circuit SOA  
capability  
Weight  
TO-247  
TO-268  
6
5
g
g
• Low VCE(sat)  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
Maximum tab temperature for soldering for 10s  
300  
260  
°C  
°C  
- for low on-state conduction losses  
• Highcurrenthandlingcapability  
• MOS Gate turn-on  
- drivesimplicity  
• Fast fall time for switching speeds  
up to 20 kHz  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
• AC motor speed control  
• Uninterruptiblepowersupplies(UPS)  
• Welding  
VGE(th)  
ICES  
IC = 750 µA, VCE = VGE  
4.0  
7.0  
V
Advantages  
• High power density  
VCE = VCES  
VGE = 0 V  
150  
1
µA  
mA  
IGES  
VCE = 0 V, VGE  
=
20 V  
100  
2.5  
nA  
V
VCE(sat)  
IC = 24A, VGE = 15 V  
DS99249(10/04)  
© 2004 IXYS All rights reserved  
IXSH 30N60B2D1  
IXST 30N60B2D1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
TO-247 (IXSH) Outline  
min. typ.  
7.0 12.0  
1220  
max.  
IC = 24A; VCE = 10 V, Note 1  
S
1
2
3
Cies  
pF  
Coes  
VCE = 25 V, VGE = 0 V  
f = 1 MHz  
110  
140  
pF  
pF  
20N60B2D1  
Cres  
42  
pF  
Qg  
50  
23  
15  
nC  
nC  
nC  
Terminals: 1 - Gate  
2 - Drain  
Qge  
Qgc  
IC = 24A, VGE = 15 V, VCE = 0.5 VCES  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Inductive load, TJ = 25°C  
td(on)  
tri  
td(off)  
tfi  
30  
30  
ns  
ns  
IC = 24A, VGE = 15 V  
VCE = 400 V, RG = 5 Ω  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
130  
140  
0.55  
280 ns  
300 ns  
1.0 mJ  
Switching times may increase for VCE  
(Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
Eoff  
20.80 21.46  
15.75 16.26  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
td(on)  
tri  
30  
50  
ns  
ns  
.780 .800  
.177  
Inductive load, TJ = 125°C  
∅P 3.55  
5.89  
3.65  
.140 .144  
IC = 24 A, VGE = 15 V  
Eon  
20N60B2 0.32  
20N60B2D1 0.82  
mJ  
mJ  
Q
6.40 0.232 0.252  
V
CE = 400 V, RG = 5 Ω  
Switching times may increase for  
VCE (Clamp) > 0.8 • VCES, higher TJ  
or increased RG  
td(off)  
tfi  
202  
234  
1.18  
ns  
ns  
TO-268 (IXST) Outline  
Eoff  
mJ  
RthJC  
RthCS  
0.50 K/W  
K/W  
0.21  
Reverse Diode (FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = 30A, VGE = 0 V  
TJ =150°C  
1.6  
2.5  
2.5  
V
V
A
IRM  
trr  
IF = 50A, VGE = 0 V, -diF/dt = 100 A/µs  
VR = 100 V  
TJ = 100°C 2.0  
TJ = 100°C 150  
ns  
trr  
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V  
30  
ns  
RthJC  
0.9 K/W  
Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
IXSH 30N60B2D1  
IXST 30N60B2D1  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
º
C
@ 25 C  
º
120  
100  
80  
60  
40  
20  
0
60  
50  
40  
30  
20  
10  
0
V
= 17V  
V
= 17V  
GE  
GE  
15V  
13V  
15V  
13V  
11V  
9V  
11V  
9V  
8
0
-50  
6
2
4
6
10 12  
14  
16 18 2 0  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
º
C
60  
50  
40  
30  
20  
10  
0
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 17V  
GE  
15V  
13V  
V
= 15V  
GE  
I
= 48A  
C
11V  
9V  
I
I
= 24A  
= 12A  
C
C
7V  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
-25  
0
25  
50  
75  
100 125 150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
7
6
5
4
3
2
1
= 25ºC  
T
J
I
= 48A  
C
24A  
12A  
T = 125ºC  
J
25ºC  
-40ºC  
9
10 11 12 13 14 15 16 17 18 19  
8
10  
12  
14  
16  
18  
VG E - Volts  
VG E - Volts  
IXSH 30N60B2D1  
IXST 30N60B2D1  
Fig. 8. Dependence of Turn-off  
Energy Loss on RG  
Fig. 7. Transconductance  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
18  
16  
14  
12  
10  
8
I
I
= 48A  
= 24A  
C
C
T = 125ºC  
J
V
= 15V  
GE  
CE  
T = -40ºC  
J
V
= 400V  
25ºC  
125ºC  
6
4
2
I
= 12A  
C
0
0
10 20 30 40 50 60 70 80 90 100  
- Ohms  
0
10  
0
20  
40  
60  
I C - Amperes  
80  
100  
120  
R
G
Fig. 9. Dependence of Turn-Off  
Energy Loss on IC  
Fig. 10. Dependence of Turn-off  
Energy Loss on Temperature  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
R
V
= 5Ω  
R
V
= 5Ω  
G
G
I
= 48A  
C
T = 125ºC  
J
= 15V  
= 15V  
GE  
CE  
GE  
CE  
V
= 400V  
V
= 400V  
I
= 24A  
C
T = 25ºC  
J
I
= 12A  
C
15  
20  
25 30  
I C - Amperes  
35  
40  
45  
50  
25 35 45 55 65 75 85 95 105 115 125  
T - Degrees Centigrade  
J
Fig. 11. Dependence of Turn-off  
Switching Time on RG  
Fig. 12. Dependence of Turn-off  
Switching Time on IC  
550  
500  
450  
400  
350  
300  
250  
200  
150  
260  
240  
220  
200  
180  
160  
140  
120  
100  
td(off)  
td(off)  
tfi  
- - - - - -  
tfi  
- - - - - -  
T = 125ºC  
J
T = 125ºC  
J
R
= 5Ω  
I
= 12A  
G
C
V
V
= 15V  
GE  
CE  
V
= 15V  
GE  
CE  
= 400V  
V
= 400V  
I
= 48A  
C
I
= 24A  
C
T = 25ºC  
J
I
= 12A  
C
10 20 30 40 50 60 70 80 90 100  
R G - Ohms  
10  
15  
20  
25  
30  
I C - Amperes  
35  
40  
45  
50  
IXSH 30N60B2D1  
IXST 30N60B2D1  
Fig. 13. Dependence of Turn-off  
Switching Time on Temperature  
Fig. 14. Gate Charge  
260  
240  
220  
200  
180  
160  
140  
120  
16  
14  
12  
10  
8
td(off)  
tfi  
- - - - - -  
I
= 48A  
24A  
12A  
C
R
= 5Ω  
G
V
V
= 15V  
GE  
CE  
= 400V  
6
V
= 300V  
CE  
4
I
I
= 24A  
C
G
I
= 12A  
24A  
48A  
C
2
= 10mA  
0
25 35 45 55 65 75 85 95 105 115 125  
TJ - Degrees Centigrade  
0
5
10 15 20 25 30 35 40 45 50 55  
Q G - nanoCoulombs  
Fig. 16. Reverse-Bias Safe  
Operating Area  
Fig. 15. Capacitance  
10000  
1000  
100  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
f = 1 MHz  
C
ies  
C
oes  
T = 125ºC  
J
R
= 10Ω  
G
dV/dT < 10V/ns  
C
res  
10  
0
0
5
10  
15  
20  
VC E - Volts  
25  
30  
35  
40  
100 150 200 250 300 350 400 450 500 550 600  
VC E - Volts  
Fig. 17. Maximum Transient Thermal Resistance  
1
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
IXSH 30N60B2D1  
IXST 30N60B2D1  
60  
A
1000  
nC  
30  
A
TVJ= 100°C  
TVJ= 100°C  
50  
40  
30  
20  
10  
0
25  
800  
IF= 60A  
IF= 30A  
IF= 15A  
IRM  
IF= 60A  
IF= 30A  
IF= 15A  
Qr  
IF  
20  
15  
10  
5
600  
400  
200  
0
TVJ=150°C  
TVJ=100°C  
TVJ=25°C  
0
A/µs  
-diF/dt  
0
1
2
3 V  
VF  
100  
1000  
0
200 400 600 1000  
A/µs  
-diF/dt  
Fig. 18. Forward current IF versus VF  
Fig. 19. Reverse recovery charge  
Fig. 20. Peak reverse current IRM  
2.0  
90  
20  
V
1.00  
µs  
TVJ= 100°C  
TVJ= 100°C  
ns  
80  
VFR  
tfr  
VFR  
trr  
1.5  
Kf  
15  
0.75  
0.50  
0.25  
0
tfr  
IF= 60A  
IF= 30A  
IF= 15A  
1.0  
10  
5
IRM  
70  
60  
0.5  
Qr  
0.0  
0
A/µs  
0
40  
80  
120  
160  
0
200 400 600 800 1000  
0
200 400 600 1000  
°C  
A/µs  
diF/dt  
TVJ  
-diF/dt  
Fig. 21. Dynamic parameters Q , I  
Fig. 20. Dynamic parameters Q ,RIM  
Fig. 22. Recovery time trr versus  
Fig. 23. Peak forward voltage VFR  
r
r
RM  
1
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
1
2
0.502  
0.193  
0.0052  
0.0003  
0.1  
ZthJC  
0.01  
DSEP 29-06  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 24. Transient thermal resistance junction to case  
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