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IXTX90P20P

型号：

IXTX90P20P

描述：

PolarPTM功率MOSFET P沟道增强型额定雪崩[ PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

130 K

下载PDF手册
PolarPTM  
Power MOSFETs  
VDSS = - 200V  
ID25 = - 90A  
IXTK90P20P  
IXTX90P20P  
RDS(on)  
≤
44mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXTK)  
G
D
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 200  
- 200  
V
V
Tab  
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
PLUS247 (IXTX)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
- 90  
A
A
- 270  
IA  
EAS  
TC = 25°C  
TC = 25°C  
- 90  
3.5  
A
J
G
D
S
Tab  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
10  
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
890  
Tab = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Md  
Mounting Force  
Mounting Torque  
(PLUS247)  
(TO-264)  
20..120 / 4.5..27  
N/lb.  
Nm/lb.in.  
Features  
1.13 / 10  
z International Standard Packages  
z Rugged PolarPTM Process  
z Avalanche Rated  
Weight  
PLUS247  
TO-264  
6
10  
g
g
z Fast Intrinsic Diode  
z Low Package Inductance  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
- 200  
- 2.0  
Typ.  
Max.  
Easy to Mount  
Space Savings  
High Power Density  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = -1mA  
VGS = ±20V, VDS = 0V  
VDS = VDSS , VGS = 0V  
V
V
z
- 4.0  
±100 nA  
Applications  
IDSS  
- 50 μA  
- 250 μA  
z
High-Side Switches  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
TJ = 125°C  
z
z
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
44 mΩ  
z
z
Current Regulators  
© 2013 IXYS CORPORATION, All Rights Reserved  
DS99933C(01/13)  
IXTK90P20P  
IXTX90P20P  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 AA Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ. Max.  
gfs  
VDS = -10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = - 25V, f = 1MHz  
30  
51  
S
Ciss  
Coss  
Crss  
12  
2210  
250  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
32  
60  
89  
28  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
: 1 - Gate  
2 - Drain  
3 - Source  
4 - Drain  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
b
b1  
b2  
4.82  
2.54  
2.00  
1.12  
2.39  
2.90  
5.13  
2.89  
2.10  
1.42  
2.69  
3.09  
.190  
.100  
.079  
.044  
.094  
.114  
.202  
.114  
.083  
.056  
.106  
.122  
Qg(on)  
Qgs  
205  
45  
nC  
nC  
nC  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
80  
c
D
E
e
0.53  
25.91 26.16  
19.81 19.96  
5.46 BSC  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
RthJC  
RthCS  
0.14 °C/W  
°C/W  
0.15  
.215 BSC  
J
K
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
Source-Drain Diode  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
R
R1  
6.07  
8.38  
3.81  
1.78  
6.27  
8.69  
4.32  
2.29  
.239  
.330  
.150  
.070  
.247  
.342  
.170  
.090  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
IS  
VGS = 0V  
- 90  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = - 45A, VGS = 0V, Note 1  
- 360  
- 3.2  
PLUS 247TM Outline  
trr  
315  
6.6  
ns  
μC  
A
IF = - 45A, -di/dt = -150A/μs  
QRM  
IRM  
VR = -100V, VGS = 0V  
- 42  
Note  
1:  
Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTK90P20P  
IXTX90P20P  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
-90  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
-240  
-200  
-160  
-120  
-80  
VGS = -10V  
VGS = -10V  
- 9V  
- 9V  
- 8V  
- 8V  
- 7V  
- 6V  
- 7V  
- 6V  
- 5V  
-40  
- 5V  
0
0.0  
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.0  
-3.5  
-4.0  
0
-5  
-10  
-15  
-20  
-25  
-30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = - 45A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
-90  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
VGS = -10V  
VGS = -10V  
- 9V  
- 8V  
- 7V  
- 6V  
I D = - 90A  
I D = - 45A  
- 5V  
0
-1  
-2  
-3  
-4  
-5  
-6  
-7  
-8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = - 45A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
-100  
-90  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
VGS = -10V  
TJ = 125ºC  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
-30  
-60  
-90  
-120  
-150  
-180  
-210  
-240  
TC - Degrees Centigrade  
ID - Amperes  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTK90P20P  
IXTX90P20P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
-120  
-100  
-80  
-60  
-40  
-20  
0
TJ = - 40ºC  
TJ = - 40ºC  
25ºC  
125ºC  
25ºC  
125ºC  
-3.0  
-3.5  
-4.0  
-4.5  
-5.0  
-5.5  
-6.0  
-6.5  
-7.0  
-4.5  
-40  
0
-20  
-40  
-60  
-80  
-100  
-120  
-140  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
-270  
-240  
-210  
-180  
-150  
-120  
-90  
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
VDS = -100V  
I
I
D = - 45A  
G = -1mA  
TJ = 125ºC  
TJ = 25ºC  
-60  
-30  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.0  
-3.5  
-4.0  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
-
100,000  
10,000  
1,000  
100  
1,000  
= 1MHz  
f
RDS(on) Limit  
TJ = 150ºC  
TC = 25ºC  
C
Single Pulse  
iss  
25µs  
-
100  
100µs  
C
oss  
1ms  
-
10  
10ms  
C
rss  
100ms  
DC  
-
1
-
-
-
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
10  
100  
1000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTK90P20P  
IXTX90P20P  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_90P20P(B9)03-25-09-D  
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