IXTA3N100P IXTP3N100P
IXTH3N100P
Symbol
Test Conditions
Characteristic Values
TO-220 (IXTP) Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max
gfs
VDS= 20V, ID = 0.5 • ID25, Note 1
1.5
2.4
S
Ciss
Coss
Crss
1220
70
14.5
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 18Ω (External)
22
ns
27
75
29
ns
ns
ns
Qg(on)
Qgs
Qgd
39
6
20
nC
nC
nC
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Pins: 1 - Gate
2 - Drain
RthJC
RthCS
1.0 °C/W
°C/W
(TO-220)
(TO-247)
0.50
0.21
°C/W
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0V
3
9
A
ISM
VSD
trr
Repetitive
A
IF = IS, VGS = 0V, Note 1
1.5 V
TO-247 (IXTH) Outline
IF = 3A, -di/dt = 100A/μs,
VR = 100V, VGS = 0V
820
ns
∅ P
1
2
3
Note 1: Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.
Terminals: 1 - Gate 2 - Drain
3 - Source
TO-263 (IXTA) Outline
Dim.
Millimeter
Min. Max.
Inches
Min.
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205 0.225
.780
.800
.177
∅P
Q
3.55
5.89
3.65
6.40
.140
0.232 0.252
.144
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
