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IXTH16P60P

型号：

IXTH16P60P

描述：

初步的技术资料PolarPTM功率MOSFET P沟道增强模式[ Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

137 K

下载PDF手册
Preliminary Technical Information  
PolarPTM  
Power MOSFET  
IXTH16P60P  
IXTT16P60P  
VDSS = - 600V  
ID25 = - 16A  
RDS(on)  
≤
720mΩ  
TO-268 (IXTT)  
P-Channel Enhancement Mode  
Avalanche Rated  
G
S
D (TAB)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 600  
- 600  
V
V
TO-247 (IXTH)  
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
- 16  
- 48  
A
A
G
D (TAB)  
= Drain  
D
S
IAR  
TC = 25°C  
TC = 25°C  
- 16  
2.5  
A
J
EAS  
G = Gate  
D
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
10  
V/ns  
W
S = Source  
TAB = Drain  
460  
Features:  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
z International standard packages  
z Avalanche Rated  
z Rugged PolarPTM process  
z Low package inductance  
- easy to drive and to protect  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
Md  
Mounting torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-268  
TO-247  
5
6
g
g
Applications:  
z
High side switching  
Push-pull amplifiers  
DC Choppers  
Current regulators  
z
z
z
z
Automatic test equipment  
Advantages:  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25°C, unless otherwise specified)  
z
Low gate charge results in simple  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ±20V, VDS = 0V  
- 600  
- 2.5  
V
drive requirement  
High power density  
Fast switching  
Easy to parallel  
z
- 4.5  
V
z
±100 nA  
z
IDSS  
VDS = VDSS  
VGS = 0V  
- 25 μA  
- 200 μA  
TJ = 125°C  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
720 mΩ  
DS99988(5/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXTH16P60P  
IXTT16P60P  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXTH) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = -10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = - 25V, f = 1MHz  
11  
18  
S
Ciss  
Coss  
Crss  
5120  
445  
60  
pF  
pF  
pF  
∅ P  
1
2
3
td(on)  
tr  
td(off)  
tf  
29  
25  
60  
38  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 3Ω (External)  
e
Terminals: 1 - Gate  
2 - Drain  
Qg(on)  
Qgs  
92  
27  
23  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
RthJC  
RthCS  
0.27 °C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
IS  
VGS = 0V  
- 16  
A
A
V
R
4.32  
5.49 .170 .216  
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = - 8A, VGS = 0V, Note 1  
- 64  
- 2.8  
TO-268 (IXTT) Outline  
trr  
QRM  
IRM  
440  
7.4  
- 33.6  
ns  
μC  
A
IF = - 8A, -di/dt = -150A/μs  
VR = - 100V, VGS = 0V  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTH16P60P  
IXTT16P60P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
-16  
-14  
-12  
-10  
-8  
-38  
-34  
-30  
-26  
-22  
-18  
-14  
-10  
-6  
VGS = -10V  
- 7V  
VGS = -10V  
- 7V  
- 6V  
- 6V  
-6  
-4  
- 5V  
-2  
- 5V  
-2  
0
0
-1  
-2  
-3  
-4  
-5  
-6  
-7  
-8  
-9  
-10 -11  
0
-3  
-6  
-9  
-12  
-15  
-18  
-21  
-24  
-27  
-30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = - 8A vs.  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
-16  
-14  
-12  
-10  
-8  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = -10V  
- 7V  
VGS = -10V  
- 6V  
I D = -16A  
I D = - 8A  
-6  
- 5V  
-4  
-2  
0
0
-2  
-4  
-6  
-8  
-10  
-12  
-14  
-16  
-18  
-20  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = - 8A vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
-18  
-16  
-14  
-12  
-10  
-8  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = -10V  
TJ = 125ºC  
-6  
TJ = 25ºC  
-4  
-2  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
TJ - Degrees Centigrade  
ID - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXTH16P60P  
IXTT16P60P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
-20  
-18  
-16  
-14  
-12  
-10  
-8  
32  
28  
24  
20  
16  
12  
8
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
125ºC  
-6  
-4  
4
-2  
0
0
-3.5  
-4.0  
-4.5  
-5.0  
-5.5  
-6.0  
-3.5  
-40  
0
-2  
-4  
-6  
-8  
-10  
-12  
-14  
-16  
-18  
-20  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
-50  
-45  
-40  
-35  
-30  
-25  
-20  
-15  
-10  
-5  
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
VDS = - 300V  
D = - 8A  
I G = -1mA  
I
TJ = 125ºC  
TJ = 25ºC  
0
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.0  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
-
100.0  
10,000  
1,000  
100  
RDS(on) Limit  
C
iss  
100µs  
-
10.0  
1ms  
DC  
C
oss  
100ms  
10ms  
-
-
1.0  
TJ = 150ºC  
C = 25ºC  
Single Pulse  
C
rss  
T
= 1 MHz  
-5  
f
10  
0.1  
-
0
-10  
-15  
-20  
-25  
-30  
-35  
-
-
1000  
10  
100  
VDS - Volts  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTH16P60P  
IXTT16P60P  
Fig. 13. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: T_16P60P (B7) 6-03-08  
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