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IXTP98N075T

型号:

IXTP98N075T

描述:

高级技术信息TrenchMVTM功率MOSFET[ Advance Technical Information TrenchMVTM Power MOSFET ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

79 K

Advance Technical Information  
TrenchMVTM  
Power MOSFET  
IXTA98N075T  
IXTP98N075T  
VDSS = 75  
ID25 = 98  
RDS(on) 10 mΩ  
V
A
N-Channel Enhancement Mode  
TO-263 (IXTA)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 175°C  
75  
75  
V
VDGR  
TJ = 25°C to 175°C; RGS = 1 MΩ  
V
V
TAB  
G
VGSM  
Transient  
20  
S
ID25  
ILRMS  
IDM  
TC = 25°C  
98  
75  
A
A
A
Package Current Limit (RMS):  
TC = 25°C, pulse width limited by TJM  
TO-220 (IXTP)  
280  
TAB  
dv/dt  
IS IDM, di/dt 100 A/μs, VDD VDSS  
TJ 175°C, RG = 5 Ω  
5
V/ns  
G
S
IAR  
TC = 25°C  
TC = 25°C  
25  
A
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
EAS  
600  
mJ  
Pd  
TC = 25°C  
230  
W
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
TJM  
Tstg  
Features  
Ultra-low On Resistance  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
175 °C Operating Temperature  
-40 ... +175  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
TSOLD  
Md  
Mounting torque (TO-220)  
1.13 / 10 Nm/lb.in.  
Weight  
TO-220  
TO-263  
3.0  
2.5  
g
g
Advantages  
Easy to mount  
Space savings  
Symbol  
Test Conditions  
Characteristic Values  
High power density  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
Applications  
Automotive  
- Motor Drives  
- 42V Power Bus  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 100 μA  
VGS = 20 V, VDS = 0 V  
75  
V
V
2.0  
4.0  
200  
nA  
- ABS Systems  
DC/DC Converters and Off-line UPS  
Primary Switch for 24V and 48V  
IDSS  
VDS = VDSS  
VGS = 0 V  
2
150  
μA  
μA  
TJ = 150°C  
Systems  
High Current Switching  
RDS(on)  
VGS = 10 V, ID = 25 A, Notes 1, 2  
10 mΩ  
Applications  
DS99541(04/07)  
© 2007 IXYS CORPORATION, All rights reserved  
IXTA98N075T IXTP98N075T  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 (IXTA) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10 V; ID = 0.5 ID25, Note 1  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
38  
64  
S
Ciss  
Coss  
Crss  
3100  
520  
pF  
pF  
pF  
125  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A  
RG = 5 Ω (External)  
20  
42  
42  
27  
ns  
ns  
ns  
ns  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
Qg(on)  
Qgs  
68  
18  
15  
nC  
nC  
nC  
Dim.  
Millimeter  
Inches  
Min. Max.  
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A  
Min.  
Max.  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
Qgd  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
RthJC  
RthCS  
0.65°C/W  
°C/W  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
0.50  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100 BSC  
.405  
.320  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
L1  
L2  
L3  
L4  
Source-Drain Diode  
Symbol  
Test ConditionsCharacteristic Values  
R
0.46  
0.74  
.018  
.029  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0 V  
98  
280  
1.5  
A
A
TO-220 (IXTP) Outline  
ISM  
VSD  
trr  
Repetitive  
IF = IS, VGS = 0 V, Note 1  
V
IF = 49 A, -di/dt = 100 A/μs  
50  
ns  
VR = 40 V, VGS = 0 V  
Note 1. Pulse test, t 300 μs, duty cycle, d 2 %;  
2. On through-hole packages, RDS(on) Kelvin test contact  
location is 5 mm or less from the package body.  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experience,  
and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change  
limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463 6,771,478 B2 7,071,537  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
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