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IXTP170N075T2

型号：

IXTP170N075T2

描述：

初步的技术资料TrenchT2TM功率MOSFET[ Preliminary Technical Information TrenchT2TM Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

208 K

下载PDF手册
Preliminary Technical Information  
TrenchT2TM  
Power MOSFET  
IXTA170N075T2  
IXTP170N075T2  
VDSS = 75V  
ID25 = 170A  
RDS(on) ≤ 5.4mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
(TAB)  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
75  
75  
V
V
VDGR  
TO-220 (IXTP)  
VGSM  
Transient  
± 20  
V
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
170  
75  
A
A
A
510  
G
D
(TAB)  
S
IAR  
EAS  
PD  
TC = 25°C  
TC = 25°C  
TC = 25°C  
85  
600  
360  
A
mJ  
W
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
Features  
TJM  
Tstg  
z International standard packages  
z Unclamped Inductive Switching  
(UIS) rated  
-55 ... +175  
TL  
Tsold  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
z Low package inductance  
z 175°C Operating Temperature  
z High current handling capability  
Md  
Mounting torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
z
ROHS Compliant  
High performance Trench  
z
Technology for extremely low RDS(on)  
Advantages  
z
Easy to mount  
Space savings  
High power density  
Synchronous  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
z
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
75  
V
V
2.0  
4.0  
Applications  
±200 nA  
μA  
IDSS  
VDS = VDSS  
VGS = 0V  
5
• Synchronous Buck Converters  
• High Current Switching Power  
Supplies  
TJ = 150°C  
100 μA  
5.4 mΩ  
RDS(on)  
VGS = 10V, ID = 50A, Notes 1, 2  
• Battery Powered Electric Motors  
• Resonant-mode power supplies  
• Electronics Ballast Application  
• Class D Audio Amplifiers  
DS99970A (4/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA170N075T2  
IXTP170N075T2  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-263 (IXTA) Outline  
(TJ = 25°C, unless otherwise specified)  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
40  
70  
S
Ciss  
Coss  
Crss  
6860  
810  
pF  
pF  
pF  
148  
td(on)  
tr  
td(off)  
tf  
19  
11  
25  
19  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 3.3Ω (External)  
Qg(on)  
Qgs  
109  
37  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
25  
RthJC  
RthCH  
0.42 °C/W  
°C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
170  
680  
1.0  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse width limited by TJM  
IF = 50A, VGS = 0V, Note 1  
TO-220 (IXTP) Outline  
trr  
63  
4.8  
ns  
A
IF = 85A, VGS = 0V  
IRM  
QRM  
-di/dt = 100A/μs  
VR = 37V  
150  
nC  
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA170N075T2  
IXTP170N075T2  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
180  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
VGS = 15V  
10V  
9V  
VGS = 15V  
10V  
9V  
8V  
8V  
7V  
7V  
6V  
5V  
60  
6V  
5V  
40  
20  
0
0
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
2.0  
300  
0
1
2
3
4
5
6
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics  
@ 150ºC  
Fig. 4. RDS(on) Normalized to ID = 85A Value  
vs. Junction Temperature  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
180  
160  
140  
120  
100  
80  
VGS = 15V  
VGS = 10V  
10V  
9V  
8V  
I D = 170A  
I D = 85A  
7V  
6V  
5V  
60  
40  
20  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 85A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
External Lead Current Limit  
VGS = 10V  
15V - - - -  
TJ = 175ºC  
TJ = 25ºC  
0
50  
100  
150  
200  
250  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA170N075T2  
IXTP170N075T2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
200  
180  
160  
140  
120  
100  
80  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
150ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
60  
40  
20  
0
0
20  
40  
60  
80  
100 120 140 160 180 200  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
1.2  
35  
7.0  
1.3  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
280  
240  
200  
160  
120  
80  
VDS = 38V  
I D = 85A  
I G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
40  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
10  
20  
30  
40  
50  
60  
70  
80  
90 100 110  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
1,000  
100  
10  
10,000  
1,000  
100  
25µs  
100µs  
RDS( ) Limit  
on  
1ms  
C
iss  
= 1 MHz  
f
10ms  
C
oss  
DC, 100ms  
TJ = 175ºC  
TC = 25ºC  
Single Pulse  
C
rss  
1
0
5
10  
15  
20  
25  
30  
1
10  
100  
VDS - Volts  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTA170N075T2  
IXTP170N075T2  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
18  
17  
16  
15  
14  
13  
12  
11  
18  
17  
16  
15  
14  
13  
12  
11  
RG = 3.3Ω  
RG = 3.3Ω  
GS = 10V  
VDS = 38V  
VGS = 10V  
V
VDS = 38V  
TJ = 125ºC  
I D = 170A  
I D = 85A  
TJ = 25ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
40  
60  
80  
100  
120  
140  
160  
180  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
60  
54  
50  
46  
42  
38  
34  
30  
26  
22  
18  
14  
10  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
40  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
18  
t r  
t
d(on) - - - -  
tf  
t
d(off) - - - -  
RG = 3.3Ω, VGS = 10V  
TJ = 125ºC, VGS = 10V  
VDS = 38V  
VDS = 38V  
I D = 85A  
I D = 170A, 85A  
I D = 170A  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
2
4
6
8
10  
12  
14  
16  
18  
20  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
28  
26  
24  
22  
20  
18  
16  
14  
44  
160  
140  
120  
100  
80  
150  
130  
110  
90  
tf  
t
d(off) - - - -  
tf  
t
d(off) - - - -  
RG = 3.3Ω, VGS = 10V  
40  
36  
32  
28  
24  
20  
16  
TJ = 125ºC, VGS = 10V  
DS = 38V  
V
VDS = 38V  
TJ = 125ºC  
70  
I D = 85A  
60  
50  
TJ = 25ºC  
40  
30  
I D = 170A  
20  
10  
2
4
6
8
10  
12  
14  
16  
18  
20  
40  
60  
80  
100  
120  
140  
160  
180  
RG - Ohms  
ID - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA170N075T2  
IXTP170N075T2  
Fig. 19. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_170N075T2(V5) 4-22-08  
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