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IXTP100N04T2

型号：

IXTP100N04T2

描述：

初步的技术资料TrenchT2TM功率MOSFET[ Preliminary Technical Information TrenchT2TM Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

209 K

下载PDF手册
Preliminary Technical Information  
TrenchT2TM  
Power MOSFET  
IXTA100N04T2  
IXTP100N04T2  
VDSS = 40V  
ID25 = 100A  
RDS(on) ≤ 7mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
(TAB)  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
40  
40  
V
V
VDGR  
TO-220 (IXTP)  
VGSM  
Transient  
± 20  
V
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
100  
75  
A
A
A
300  
G
D
S
(TAB)  
IAR  
EAS  
PD  
TC = 25°C  
TC = 25°C  
TC = 25°C  
50  
300  
150  
A
mJ  
W
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
Features  
TJM  
Tstg  
z International standard packages  
z Unclamped Inductive Switching (UIS)  
rated  
-55 ... +175  
TL  
TSOLD  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
z Low package inductance  
z 175°C Operating Temperature  
z High current handling capability  
Md  
Mounting torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
z
ROHS Compliant  
High performance Trench  
z
Technology for extremely low RDS(on)  
Advantages  
z
Easy to mount  
Space savings  
High power density  
Synchronous  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
40  
V
V
z
2.0  
4.0  
Applications  
±100 nA  
μA  
IDSS  
VDS = VDSS  
VGS = 0V  
2
• Synchronous Buck Converters  
• High Current Switching Power  
TJ = 150°C  
50 μA  
7 mΩ  
Supplies  
RDS(on)  
VGS = 10V, ID = 25A, Notes 1, 2  
• Battery Powered Electric Motors  
• Resonant-mode power supplies  
• Electronics Ballast Application  
• Class D Audio Amplifiers  
DS99972(4/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA100N04T2  
IXTP100N04T2  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-263 (IXTA) Outline  
(TJ = 25°C, unless otherwise specified)  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
27  
45  
S
Ciss  
Coss  
Crss  
2690  
490  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
105  
td(on)  
tr  
td(off)  
tf  
12.0  
5.2  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 20V, ID = 0.5 • ID25  
15.8  
6.4  
RG = 5Ω (External)  
Qg(on)  
Qgs  
25.5  
8.0  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
5.7  
RthJC  
RthCH  
1.0 °C/W  
°C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
100  
400  
1.2  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse width limited by TJM  
IF = 50A, VGS = 0V, Note 1  
IF = 50A, VGS = 0V  
TO-220 (IXTP) Outline  
trr  
34  
1.44  
24.5  
ns  
A
-di/dt = 100A/μs  
VR = 20V  
IRM  
QRM  
nC  
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA100N04T2  
IXTP100N04T2  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
350  
300  
250  
200  
150  
100  
50  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 15V  
VGS = 15V  
10V  
9V  
8V  
10V  
9V  
7V  
6V  
8V  
7V  
6V  
5V  
5V  
4
0
0
1
2
3
5
6
7
8
175  
175  
0.0  
0.0  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
1.0  
300  
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics  
@ 150ºC  
Fig. 4. RDS(on) Normalized to ID = 50A Value  
vs. Junction Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = 15V  
VGS = 10V  
10V  
9V  
8V  
I D = 100A  
7V  
6V  
I D = 50A  
5V  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 50A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = 10V  
External Lead Current Limit  
15V  
- - - -  
TJ = 175ºC  
TJ = 25ºC  
50  
100  
150  
200  
250  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA100N04T2  
IXTP100N04T2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
25ºC  
150ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
0
0
0
1
10  
20  
30  
40  
50  
60  
70  
80  
90 100 110  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
270  
240  
210  
180  
150  
120  
90  
VDS = 20V  
I D = 50A  
I G = 10mA  
TJ = 150ºC  
60  
TJ = 25ºC  
30  
0
2
4
6
8
10 12 14 16 18 20 22 24 26  
QG - NanoCoulombs  
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
1,000  
100  
10  
10,000  
1,000  
100  
R
DS(on)  
Limit  
C
iss  
25µs  
100µs  
C
C
oss  
1ms  
rss  
DC  
10ms  
TJ = 175ºC  
TC = 25ºC  
Single Pulse  
100ms  
= 1 MHz  
5
f
10  
1
0
10  
15  
20  
25  
30  
35  
40  
10  
100  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
VDS - Volts  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
RG = 5Ω  
RG = 5Ω  
VGS = 10V  
VDS = 20V  
VGS = 10V  
VDS = 20V  
TJ = 125ºC  
I D = 100A  
I D = 50A  
TJ = 25ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
20  
30  
40  
50  
60  
70  
80  
90  
100  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
14  
13  
12  
11  
10  
9
23  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
16  
15  
14  
13  
12  
11  
10  
9
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
12  
t r  
td(on) - - - -  
tf  
RG = 5Ω, VGS = 10V  
td(off) - - - -  
TJ = 125ºC, VGS = 10V  
VDS = 20V  
VDS = 20V  
I D = 50A, 100A  
I D = 100A  
8
7
I D = 50A  
6
I D = 100A  
5
4
3
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
4
6
8
10  
12  
14  
16  
18  
20  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
20  
18  
16  
14  
12  
10  
8
28  
80  
70  
60  
50  
40  
30  
20  
10  
0
80  
70  
60  
50  
40  
30  
20  
10  
0
tf  
RG = 5Ω, VGS = 10V  
td(off) - - - -  
tf  
td(off) - - - -  
26  
24  
22  
20  
18  
16  
14  
12  
10  
TJ = 125ºC, VGS = 10V  
VDS = 20V  
VDS = 20V  
TJ = 125ºC  
I D = 50A  
I D = 100A  
6
TJ = 25ºC  
80  
4
2
4
6
8
10  
12  
14  
16  
18  
20  
20  
30  
40  
50  
60  
70  
90  
100  
RG - Ohms  
ID - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA100N04T2  
IXTP100N04T2  
Fig. 19. Maximum Transient Thermal Impedance  
10.00  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_100N04T2(V2) 4-23-08  
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