IXEL40N400
Symbol
Test Conditions
Characteristic Values
ISOPLUS i5-PakTM HV Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
E
S
gfs
ISC
IC = IC110, VCE = 10V, Note 1
IC = IC110, VCC = 3400V, VCM < 4000V
VGE = 15V, tSC <10μs
14
24
S
A
200
4
+
1
2
3
Cies
Coes
Cres
6040
278
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
120
c
b1
e1
e1
b3
b2
e
RGint
5.2
Ω
Pin 1 = Gate
Pin 2 = Emitter
Pin 3 = Collector
Tab 4 = Isolated
Qg(on)
Qge
275
63
nC
nC
nC
SYM
INCHES
MIN
MILLIMETER
IC = IC110, VGE = 15V, VCE = 1000 V
MAX
MIN
MAX
Qgc
134
A
0.190
0.205
0.118
0.055
0.055
0.072
0.068
0.029
1.040
0.799
4.83
2.59
5.21
3.00
1.40
1.40
1.83
1.73
0.74
26.42
20.29
A1
A2
b
0.102
td(on)
tri
Eon
td(off)
tfi
160
100
55
ns
ns
mJ
ns
ns
Inductive load, TJ = 25°C
0.046
1.17
0.045
1.14
IC = IC110, VGE = 15V
b1
b2
c
0.063
1.60
630
425
0.058
1.47
VCE = 2800V, RG = 33Ω
0.020
0.51
D
1.020
25.91
19.56
3.81 BSC
Note 3
Eoff
165
mJ
E
0.770
e
0.150 BSC
td(on)
tri
Eon
td(off)
tfi
155
105
85
ns
ns
e1
L
0.450 BSC
0.780
11.43 BSC
19.81
Inductive load, TJ = 125°C
0.820
0.102
0.235
0.513
0.180
0.130
0.690
0.821
20.83
2.59
L1
Q
0.080
0.210
0.490
0.150
0.100
0.668
0.801
2.03
5.33
IC = IC110, VGE = 15V
mJ
ns
5.97
715
455
205
VCE = 2800V, RG = 33Ω
Q1
R
12.45
3.81
13.03
4.57
ns
Note 3
Eoff
mJ
R1
S
2.54
3.30
16.97
20.34
17.53
20.85
RthJC
RthCK
0.26 °C/W
°C/W
T
(Pressure Mount)
0.15
U
0.065
0.080
1.65
2.03
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Part must be heatsunk for high-temp ICES measurement.
3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
