IXTA14N60P IXTP14N60P
IXTQ14N60P
Symbol
Test Conditions
Characteristic Values
TO-3P (IXTQ) Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
7
13
S
Ciss
Coss
Crss
2500
215
13
pF
pF
pF
td(on)
tr
td(off)
tf
23
27
70
26
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
Qg(on)
Qgs
36
16
12
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
0.42 °C/W
(TO-220)
(TO-3P
0.50
0.25
°C/W
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
IS
VGS = 0V
14
A
A
ISM
VSD
trr
Repetitive, pulse width limited by TJM
IF = IS, VGS = 0V, Note 1
42
1.5
V
TO-220 (IXTP) Outline
IF = 14A, -di/dt = 100A/μs
500
ns
VR = 100V, VGS = 0V
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
TO-263 (IXTA) Outline
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
