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2SK3512-01S

型号：

2SK3512-01S

描述：

的MOSFET的耐用性[ MOSFETs ]

品牌：

FUJI[ FUJI ELECTRIC ]

页数：

4 页

PDF大小：

127 K

下载PDF手册
2SK3512-01L,S,SJ  
FUJI POWER MOSFET  
Super FAP-G Series  
Features  
N-CHANNEL SILICON POWER MOSFET  
Outline Drawings  
High speed switching  
Low on-resistance  
No secondary breadown  
Low driving power  
Avalanche-proof  
P4  
Applications  
Switching regulators  
UPS (Uninterruptible Power Supply)  
DC-DCconverters  
Maximum ratings and characteristicAbsolute maximum ratings  
(Tc=25°C unless otherwise specified)  
Item  
Symbol  
VDS  
Ratings  
500  
Unit  
V
Drain-source voltage  
Continuous drain current  
Pulsed drain current  
Gate-source voltage  
Repetitive or non-repetitive  
Maximum Avalanche Energy  
Maximum Drain-Source dV/dt  
Peak Diode Recovery dV/dt  
Max. power dissipation  
Equivalent circuit schematic  
A
ID  
±12  
±48  
±30  
12  
A
ID(puls]  
VGS  
V
Drain(D)  
A
IAR *2  
mJ  
kV/µs  
kV/µs  
W
EAS*1  
dVDS/dt *4  
dV/dt *3  
PD Ta=25  
Tc=25  
Tch  
217  
20  
5
Gate(G)  
°C  
°C  
1.67  
Source(S)  
95  
+150  
-55 to +150  
Operating and storage  
temperature range  
°C  
°C  
<
Tstg  
<
<
<
*3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C  
*1 L=2.77mH, Vcc=50V *2 Tch=150°C  
<
*4VDS=500V  
Electrical characteristics (Tc =25°C unless otherwise specified)  
Min.  
Typ.  
Max. Units  
Symbol  
V(BR)DSS  
VGS(th)  
Item  
Test Conditions  
V
Drain-source breakdown voltaget  
Gate threshold voltage  
µ
ID=250 A  
VGS=0V  
500  
V
µ
ID= 250 A  
VDS=VGS  
3.0  
5.0  
µA  
25  
VDS=500V VGS=0V  
VDS=400V VGS=0V  
Tch=25°C  
Zero gate voltage drain current  
IDSS  
Tch=125°C  
250  
IGSS  
RDS(on)  
gfs  
nA  
Gate-source leakage current  
Drain-source on-state resistance  
Forward transcondutance  
Input capacitance  
VGS=±30V  
VDS=0V  
10  
100  
ID=6A VGS=10V  
ID=6A VDS=25V  
VDS=25V  
Ω
S
0.40  
0.52  
5.5  
11  
1200  
140  
Ciss  
pF  
1800  
210  
9.0  
Coss  
Crss  
td(on)  
tr  
Output capacitance  
VGS=0V  
Reverse transfer capacitance  
Turn-on time ton  
6.0  
f=1MHz  
VCC=300V ID=6A  
ns  
17  
15  
34  
7
26  
23  
51  
11  
VGS=10V  
td(off)  
tf  
Turn-off time toff  
RGS=10 Ω  
QG  
nC  
Total Gate Charge  
30  
11  
10  
45  
16.5  
15  
VCC=250V  
ID=12A  
QGS  
QGD  
IAV  
Gate-Source Charge  
Gate-Drain Charge  
VGS=10V  
12  
A
Avalanche capability  
Diode forward on-voltage  
Reverse recovery time  
Reverse recovery charge  
L=2.77mH Tch=25°C  
VSD  
trr  
Qrr  
1.00  
1.50  
V
IF=12A VGS=0V Tch=25°C  
IF=12A VGS=0V  
-di/dt=100A/µs  
0.7  
4.5  
µs  
µC  
Tch=25°C  
Thermalcharacteristics  
Item  
Min.  
Typ.  
Max. Units  
Symbol  
Test Conditions  
Rth(ch-c)  
channel to case  
1.32  
°C/W  
Thermal resistance  
Rth(ch-a)  
channel to ambient  
75.0  
°C/W  
1
2SK3512-01L,S,SJ  
FUJI POWER MOSFET  
Characteristics  
Maximum Avalanche Energy vs. starting Tch  
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=12A  
Allowable Power Dissipation  
PD=f(Tc)  
300  
125  
100  
75  
50  
25  
0
250  
200  
150  
100  
50  
0
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
Tc [°C]  
starting Tch [°C]  
Typical Transfer Characteristic  
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C  
Typical Output Characteristics  
ID=f(VDS):80µs Pulse test,Tch=25°C  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
20V  
10V  
8V  
10  
7.5V  
1
7.0V  
VGS=6.5V  
6
4
0.1  
2
0
0
1
2
3
4
5
6
7
8
9
10  
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30  
VDS [V]  
VGS[V]  
Typical Drain-Source on-state Resistance  
Typical Transconductance  
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C  
RDS(on)=f(ID):80µs Pulse test, Tch=25°C  
100  
10  
1
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
VGS=6.5V  
7.0V  
7.5V  
10V  
20V  
8V  
0.1  
0.1  
1
10  
0
5
10  
15  
20  
25  
30  
ID [A]  
ID [A]  
2
2SK3512-01L,S,SJ  
FUJI POWER MOSFET  
Gate Threshold Voltage vs. Tch  
Drain-Source On-state Resistance  
VGS(th)=f(Tch):VDS=VGS,ID=250uA  
RDS(on)=f(Tch):ID=6A,VGS=10V  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
max.  
min.  
max.  
typ.  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Tch [°C]  
Tch [°C]  
Typical Capacitance  
C=f(VDS):VGS=0V,f=1MHz  
Typical Gate Charge Characteristics  
VGS=f(Qg):ID=12A, Tch=25°C  
24  
22  
20  
18  
16  
14  
12  
10  
8
10n  
1n  
Vcc= 120V  
Ciss  
300V  
480V  
100p  
10p  
1p  
Coss  
Crss  
6
4
2
0
10-1  
100  
101  
102  
103  
0
10  
20  
30  
40  
50  
60  
70  
80  
Qg [nC]  
VDS [V]  
Typical Switching Characteristics vs. ID  
Typical Forward Characteristics of Reverse Diode  
t=f(ID):Vcc=300V, VGS=10V, RG=10Ω  
IF=f(VSD):80µs Pulse test,Tch=25°C  
100  
102  
101  
100  
tr  
td(off)  
10  
td(on)  
tf  
1
0.1  
100  
101  
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00  
VSD [V]  
ID [A]  
3
2SK3512L,S,SJ-01MR  
FUJI POWER MOSFET  
Transient Thermal Impedance  
Zth(ch-c)=f(t):D=0  
101  
100  
10-1  
10-2  
10-3  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
t [sec]  
Maximum Avalanche Current Pulsewidth  
IAV=f(tAV):starting Tch=25°C. Vcc=50V  
102  
101  
100  
10-1  
10-2  
Single Pulse  
10-8  
10-7  
10-6  
10-5  
10-4  
10-3  
10-2  
tAV [sec]  
Outline Drawings (mm)  
Type(S)  
Type(L)  
Type(SJ)  
See Note: 1.  
See Note: 1.  
Trademark  
4
See Note: 1.  
Trademark  
Fig. 1.  
Fig. 1.  
Trademark  
Lot No.  
Lot No.  
Lot No.  
Type name  
Type name  
Type name  
PRE-SOLDER  
Fig. 1.  
Fig. 1.  
CONNECTION  
CONNECTION  
1
2
3
GATE  
GATE  
1
2
3
4
DRAIN  
SOURCE  
DRAIN  
SOURCE  
4
Solder Plating  
Solder Plating  
Pre-Solder  
CONNECTION  
Pre-Solder  
Notes  
Notes  
1
2
3
GATE  
1. ( ) : Reference dimensions.  
1. ( ) : Reference dimensions.  
1
2
3
2. The metal part is covered with  
the solder plating, part of cutting  
is without the solder plating.  
Note: 1. Guaranteed mark of  
avalanche ruggedness.  
DRAIN  
2. The metal part is covered with  
the solder plating, part of cutting  
is without the solder plating.  
SOURCE  
Note: 1. Guaranteed mark of  
avalanche ruggedness.  
Note: 1. Guaranteed mark of avalanche ruggedness.  
DIMENSIONS ARE IN MILLIMETERS.  
4
厂商 型号 描述 页数 下载

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ETC

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PANASONIC

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PANASONIC

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