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2SK3058-Z

型号：

2SK3058-Z

描述：

晶体管| MOSFET | N沟道| 60V V（ BR ） DSS | 55A I（ D） | TO- 263ABVAR\n[ TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-263ABVAR ]

品牌：

ETC[ ETC ]

页数：

8 页

PDF大小：

79 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3058  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
ORDERING INFORMATION  
PART NUMBER  
2SK3058  
DESCRIPTION  
This product is N-Channel MOS Field Effect Transistor  
designed for high current switching applications.  
PACKAGE  
TO-220AB  
TO-262  
2SK3058-S  
FEATURES  
• Super Low On-State Resistance  
RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 28 A)  
RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 28 A)  
• Low Ciss : Ciss = 2100 pF (TYP.)  
• Built-in Gate Protection Diode  
2SK3058-ZJ  
TO-263  
TO-220SMDNote  
★
2SK3058-Z  
Note TO-220SND package is produced only in  
Japan.  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
(TO-220AB)  
V
Drain to Source Voltage (VGS = 0)  
Gate to Source Voltage (VDS = 0)  
Gate to Source Voltage (VDS = 0)  
Drain Current (DC)  
VDSS  
VGSS(AC)  
VGSS(DC)  
ID(DC)  
ID(pulse)  
PT  
60  
±20  
+20, –10  
±55  
V
V
A
Drain Current (Pulse) Note1  
±165  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
58  
W
W
°C  
°C  
A
PT  
1.5  
(TO-262)  
Tch  
150  
Storage Temperature  
Tstg  
–55 to + 150  
27.5  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
75.6  
mJ  
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %  
2. Starting Tch = 25 °C, VDD = 30 V, RG = 25 Ω, VGS = 20 V → 0  
(TO-263, TO-220SMD)  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published April 2001 NS CP(K)  
Printed in Japan  
D13097EJ2V0DS00 (2nd edition)  
The mark ★ shows major revised points.  
1998, 1999  
©
2SK3058  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTICS  
SYMBOL  
RDS(on)1  
RDS(on)2  
VGS(off)  
| yfs |  
IDSS  
TEST CONDITIONS  
VGS = 10 V, ID = 28 A  
MIN. TYP. MAX. UNIT  
Drain to Source On-state Resistance  
12  
19  
1.6  
42  
17  
27  
mΩ  
mΩ  
V
VGS = 4.0 V, ID = 28 A  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 28 A  
VDS = 60 V, VGS = 0 V  
VGS = ±20 V, VDS = 0 V  
VDS = 10 V  
Gate to Source Cut-off Voltage  
Forward Transfer Admittance  
Drain Leakage Current  
Gate to Source Leakage Current  
Input Capacitance  
1.0  
13  
2.0  
S
10  
µA  
µA  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
IGSS  
±10  
Ciss  
2100  
550  
220  
36  
Output Capacitance  
Coss  
Crss  
VGS = 0 V  
Reverse Transfer Capacitance  
Turn-on Delay Time  
F = 1 MHz  
td(on)  
tr  
td(off)  
tf  
ID = 28 A  
★
Rise Time  
VGS = 10 V  
410  
130  
260  
45  
Turn-off Delay Time  
VDD = 30 V  
Fall Time  
RG = 10 Ω  
Total Gate Charge  
QG  
ID = 55 A  
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
QGD  
VF(S-D)  
trr  
VDD = 48 V  
7
VGS = 10 V  
13  
IF = 55 A, VGS = 0 V  
IF = 55 A, VGS = 0 V  
di/dt = 100A/µs  
1.0  
60  
ns  
nC  
Qrr  
100  
★
TEST CIRCUIT 1 AVALANCHE CAPABILITY  
TEST CIRCUIT 2 SWITCHING TIME  
D.U.T.  
L
D.U.T.  
V
GS  
R
L
RG  
= 25 Ω  
90%  
V
GS  
Wave Form  
10%  
0
R
G
PG.  
PG.  
50 Ω  
V
DD  
R = 10 Ω  
G
V
DD  
V
GS = 20→0V  
I
D
90%  
90%  
10%  
I
D
V
0
GS  
BVDSS  
10%  
I
D
0
Wave Form  
I
AS  
VDS  
τ
I
D
t
d(on)  
t
r
t
d(off)  
tf  
VDD  
t
on  
toff  
τ = 1 µs  
Duty Cycle ≤ 1 %  
Starting Tch  
TEST CIRCUIT 3 GATE CHARGE  
D.U.T.  
= 2 mA  
I
G
RL  
PG.  
50 Ω  
VDD  
2
Data Sheet D13097EJ2V0DS  
2SK3058  
TYPICAL CHARACTERISTICS (TA = 25 °C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
70  
60  
50  
40  
30  
20  
10  
100  
80  
60  
40  
20  
0
20 40 60 80 100 120 140 160  
- Case Temperature - °C  
0
20 40 60 80 100 120 140 160  
T
C
T
C
- Case Temperature - °C  
★
FORWARD BIAS SAFE OPERATING AREA  
1000  
100  
10  
ID(pulse)  
P
W
=
1
0
µ
100  
s
µ
s
Limited  
= 10 V)  
1
ms  
ID(DC)  
S
RDS(on)  
(at V  
G
100  
ms  
P
o
DC  
r Dissipation  
w
Limited  
e
1
TC  
= 25˚C  
Single Pulse  
0.1  
0.1  
1
10  
100  
VDS - Drain to Source Voltage - V  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1 000  
100  
10  
1
R
th(ch-A)= 83.3˚C/W  
th(ch-C)= 2.16˚C/W  
R
0.1  
0.01  
T
C
= 25˚C  
Single Pulse  
0.001  
100  
10  
µ
µ
1m  
10m  
100m  
1
10  
100 1000  
PW - Pulse Width - s  
3
Data Sheet D13097EJ2V0DS  
2SK3058  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD TRANSFER CHARACTERISTICS  
100  
10  
1
Pulsed  
100  
80  
60  
40  
20  
V
GS = 10 V  
T
A
= 125˚C  
75˚C  
25˚C  
−25˚C  
V
GS = 4.0V  
0.1  
Pulsed  
VDS = 10V  
2
4
0
3
1
0
1
2
3
4 5  
V
DS - Drain to Source Voltage - V  
VGS - Gate to Source Voltage - V  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
100  
10  
Pulsed  
70  
T
ch = −25˚C  
25˚C  
60  
50  
40  
30  
20  
10  
75˚C  
125˚C  
1
V
DS =10V  
I
D
=28A  
20  
Pulsed  
0.1  
0.1  
0
10  
30  
1.0  
10  
100  
V
GS - Gate to Source Voltage - V  
I
D
- Drain Current - A  
GATE TO SOURCE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
80  
60  
40  
20  
0
V
DS = 10V  
= 1mA  
Pulsed  
I
D
2.0  
1.5  
1.0  
V
GS =4.0V  
0.5  
0
V
GS =10V  
−50  
0
50  
100  
150  
0.1  
1
10  
100  
T
ch - Channel Temperature - ˚C  
I
D
- Drain Current - A  
4
Data Sheet D13097EJ2V0DS  
2SK3058  
★
SOURCE TO DRAIN DIODE FORWARD VOLTAGE  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
1000  
Pulsed  
40  
30  
V
GS = 4.0V  
100  
10  
1
V
GS = 10 V  
V
GS = 0 V  
20  
10  
V
GS = 10V  
I
D
= 28A  
0.1  
0
1.0  
- Source to Drain Voltage - V  
1.5  
0.5  
0
0
−50  
100  
150  
50  
V
SD  
T
ch - Channel Temperature - ˚C  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
100 000  
10 000  
V
V
R
DD = 30V  
GS = 10V  
= 10Ω  
V
GS = 0 V  
f = 1MHz  
10 000  
1 000  
G
tr  
f
t
C
iss  
t
d(off)  
100  
10  
1 000  
100  
t
d(on)  
Coss  
C
rss  
0.1  
1
10  
100  
0.1  
1
10  
100  
V
DS - Drain to Source Voltage - V  
I
D
- Drain Current - A  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
1 000  
100  
80  
60  
40  
20  
16  
di/dt=100A/  
µ
s
ID = 55A  
V
GS =0 V  
14  
12  
10  
8
V
DD = 12 V  
30 V  
48 V  
6
10  
1
4
2
0
0.1  
1
10  
100  
0
20  
40  
60  
80  
I
F
- Drain Current - A  
Q
G
- Gate Charge - nC  
5
Data Sheet D13097EJ2V0DS  
2SK3058  
★
SINGLE AVALANCHE ENERGY  
DERATING FACTOR  
SINGLE AVALANCHE CURRENT vs.  
INDUCTIVE LOAD  
160  
140  
120  
100  
80  
100  
10  
V
R
V
I
DD = 30V  
= 25Ω  
GS = 20 V → 0 V  
AS ≤ 27.5A  
G
IAS = 27.5A  
EAS  
=
75.6  
mJ  
60  
1.0  
0.1  
40  
VDD = 30V  
20  
VGS = 20V→0 V  
RGS = 25Ω  
0
25  
50  
75  
100  
125  
150  
10  
µ
100  
µ
1m  
10m  
Starting Tch - Starting Channel Temperature - ˚C  
L - Inductive Load - H  
6
Data Sheet D13097EJ2V0DS  
2SK3058  
PACKAGE DRAWINGS (Unit : mm)  
1)TO-220AB (MP-25)  
2)TO-262 (MP-25 Fin Cut)  
4.8 MAX.  
1.3±0.2  
4.8 MAX.  
1.3±0.2  
10.6 MAX.  
(10)  
4
φ
3.6±0.2  
10.0  
1
2
3
4
1
2 3  
1.3±0.2  
1.3±0.2  
2.8±0.2  
0.5±0.2  
0.75±0.3  
2.54 TYP.  
2.54 TYP.  
0.75±0.1  
2.54 TYP.  
0.5±0.2  
2.8±0.2  
1.Gate  
2.Drain  
2.54 TYP.  
3.Source  
4.Fin (Drain)  
1.Gate  
2.Drain  
3.Source  
4.Fin (Drain)  
3)TO-220SMD (MP-25Z)Note  
★
3)TO-263 (MP-25ZJ)  
4.8 MAX.  
4.8 MAX.  
(10)  
4
(10)  
1.3±0.2  
1.3±0.2  
4
1.4±0.2  
0.7±0.2  
1.4±0.2  
1.0±0.3  
0.5±0.2  
0.5±0.2  
2.54 TYP.  
2.54 TYP.  
3
2.54 TYP.  
2.54 TYP.  
3
1
2
1
2
1.Gate  
1.Gate  
2.Drain  
3.Source  
2.Drain  
3.Source  
4.Fin (Drain)  
4.Fin (Drain)  
Note This package is produced only in Jaman.  
EQUIVALENT CIRCUIT  
Drain  
Remark The diode connected between the gate and source of the transistor  
serves as a protector against ESD. When this device actually used,  
an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
Body  
Diode  
Gate  
Gate  
Protection  
Diode  
Source  
7
Data Sheet D13097EJ2V0DS  
2SK3058  
•
The information in this document is current as of April, 2001. The information is subject to change  
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data  
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products  
and/or types are available in every country. Please check with an NEC sales representative for  
availability and additional information.  
•
•
No part of this document may be copied or reproduced in any form or by any means without prior  
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.  
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of  
third parties by or arising from the use of NEC semiconductor products listed in this document or any other  
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or others.  
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of customer's equipment shall be done under the full  
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third  
parties arising from the use of these circuits, software and information.  
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize  
risks of damage to property or injury (including death) to persons arising from defects in NEC  
semiconductor products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-failure features.  
NEC semiconductor products are classified into the following three quality grades:  
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products  
developed based on a customer-designated "quality assurance program" for a specific application. The  
recommended applications of a semiconductor product depend on its quality grade, as indicated below.  
Customers must check the quality grade of each semiconductor product before using it in a particular  
application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4  
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