Power F-MOS FETs
2SK3035 (Tentative)
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed
● High-speed switching
● Low ON-resistance
unit: mm
● No secondary breakdown
● Low-voltage drive
● High electrostatic breakdown voltage
6.5±0.1
5.3±0.1
4.35±0.1
2.3±0.1
0.5±0.1
■ Applications
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
1.0±0.1
0.1±0.05
0.93±0.1
0.5±0.1
● Switching power supply
0.75±0.1
■ Absolute Maximum Ratings (TC = 25°C)
2.3±0.1
4.6±0.1
Parameter
Symbol
Ratings
Unit
V
Drain to Source breakdown voltage VDSS
150
Gate to Source voltage
DC
Pulse
Avalanche energy capacity
VGSS
ID
±20
V
1: Gate
2: Drain
3: Source
±3
A
1
2
3
Drain current
IDP
±6
A
U Type Package
EAS*
0.45
mJ
Internal Connection
Allowable power
dissipation
TC = 25°C
Ta = 25°C
10
PD
W
D
1
G
Channel temperature
Storage temperature
Tch
150
°C
°C
Tstg
−55 to +150
S
*
L = 0.1mH, IL = 3A, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
VDS = 120V, VGS = 0
VGS = ±20V, VDS = 0
min
typ
max
10
Unit
µA
µA
V
Drain to Source cut-off current
Gate to Source leakage current
IDSS
IGSS
±10
Drain to Source breakdown voltage VDSS
I
D = 1mA, VGS = 0
VDS = 10V, ID = 1mA
RDS(on)1 VGS = 10V, ID = 2A
150
1
Gate threshold voltage
Vth
2.5
1.1
1.3
V
0.52
0.6
mΩ
mΩ
S
Drain to Source ON-resistance
RDS(on)2
| Yfs |
VGS = 4V, ID = 2A
Forward transfer admittance
Diode forward voltage
VDS = 10V, ID = 2A
IDR = 3A, VGS = 0
1.5
2.7
VDSF
−1.4
V
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
190
45
pF
VDS = 10V, VGS = 0, f = 1MHz
pF
25
pF
Turn-on time (delay time)
Rise time
td(on)
tr
13
ns
VDD = 100V, ID = 2A
25
ns
Fall time
tf
VGS = 10V, RL = 50Ω
135
540
ns
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
td(off)
Rth(ch-c)
Rth(ch-a)
ns
12.5
125
°C/W
°C/W
1
