2SK2715
Transistors
5
5
12
10
8
V
GS=0V
V
DS=10V
V
GS
=
10V
Pulsed
Pulsed
Pulsed
2
1
2
1
Ta=125°C
−25°C
25°C
75°C
75°C
25°C
−25°C
Ta=125°C
0.5
0.5
6
0.2
0.1
I =2A
D
4
0.2
0.1
1A
2
0
0.05
0.05
0.02
0
0.5
1.0
1.5
−50 −25
0
25 50 75 100 125 150
0.01 0.02 0.05 0.1 0.2
0.5
1
2
5
SOURCE-DRAIN VOLTAGE : VSD (V)
CHANNEL TEMPERATURE : Tch (°C)
DRAIN CURRENT : I
D
(A)
Fig.9 Reverse drain current
Fig.7 Static drain-source on-state
resistance vs. channel temperature
Fig.8 Forward transfer admittance
vs. drain current
vs. source-drain voltage ( Ι )
5
1000
1000
500
T
a=25°C
Ta=25°C
Ta=25°C
V
GS=0V
Pulsed
V
V
DD=150V
GS=10V
500
f=1MHz
C
iss
Pulsed
2
1
10V
VGS=0V
R =10Ω
G
200
100
50
Pulsed
200
100
50
t
f
C
oss
0.5
t
d(off)
20
10
5
C
rss
0.2
0.1
20
10
5
t
r
t
d(on)
2
1
0.05
2
5
10 20
50 100 200 5001000
0.1 0.2
0.5
1
2
5
10 20
0
0.5
1.0
1.5
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : I
D
(A)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.11 Typical capacitance
vs. drain-source voltage
Fig.12 Switching characteristics
(See Figures 16 and 17 for
the measurement circuit and
resultant waveforms)
Fig.10 Reverse drain current
vs. source-drain voltage ( ΙΙ )
500
20
5000
Ta=25°C
Ta=25°C
ID=5A
450
400
350
300
250
200
150
100
18
16
14
di/dt=100A/µs
Pulsed
V
GS=0V
V
DS
2000
Pulsed
1000
500
V
GS 12
V
DD=100V
250V
10
8
400V
200
6
V
DD=400V
250V
100V
4
100
50
50
0
0
2
0
4
8
12 16 20 24 28 32
0.1
0.2
0.5
1
2
5
10
TOTAL GATE CHARGE : Qg (nC)
REVERSE DRAIN CURRENT : IDR (A)
Fig.13 Dynamic input characteristics
Fig.14 Reverse recovery time
vs. reverse drain current
(See Figure 18 for measurement circuit)
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