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2SK2513-Z

型号:

2SK2513-Z

描述:

晶体管| MOSFET | N沟道| 60V V( BR ) DSS | 45A I( D) | TO- 262AA[ TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 45A I(D) | TO-262AA ]

品牌:

ETC[ ETC ]

页数:

8 页

PDF大小:

117 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2513, 2SK2513-Z  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
PACKAGE DIMENSIONS  
The 2SK2513, 2SK2513-Z is N-Channel MOS Field Effect Tran-  
sistor designed for high current switching applications.  
(in millimeters)  
10.6 MAX.  
4.8 MAX.  
FEATURES  
Low On-Resistance  
3.6 0.ꢀ  
1.3 0.ꢀ  
10.0  
RDS(on)1 = 15 m(VGS = 10 V, ID = 23 A)  
RDS(on)2 = 23 m(VGS = 4 V, ID = 23 A)  
4
1 ꢀ 3  
Low Ciss  
Ciss = 2 100 pF TYP.  
Built-in G-S Protection Diode  
0.5 0.ꢀ  
1.3 0.ꢀ  
0.75 0.1  
ꢀ.54  
ꢀ.8 0.ꢀ  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
ꢀ.54  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
60  
±20  
±45  
±180  
75  
V
V
1. Gate  
ꢀ. Drain  
3. Source  
4. Fin (Drain)  
A
JEDEC: TO-ꢀꢀ0AB  
Drain Current (pulse)*  
A
MP-25 (TO-220)  
Total Power Dissipation (Tc = 25 ˚C)  
Total Power Dissipation (TA = 25 ˚C)  
Channel Temperature  
W
W
˚C  
4.8 MAX.  
(10.0)  
PT2  
1.5  
1.3 0.ꢀ  
Tch  
150  
4
Storage Temperature  
Tstg –55 to +150 ˚C  
*
PW 10 µs, Duty Cycle 1 %  
1.4 0.ꢀ  
1.0 0.3  
0.5 0.ꢀ  
(ꢀ.54) (ꢀ.54)  
1
ꢀ 3  
1. Gate  
ꢀ. Drain  
3. Source  
4. Fin (Drain)  
MP-25Z (SURFACE MOUNT TYPE)  
Drain  
Body  
Diode  
Gate  
Thediodeconnectedbetweenthegateandsourceofthetransistor  
serves as a protector against ESD. When this device is actually used,  
an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
Gate Protection  
Diode  
Source  
Document No. D10292EJ1V0DS00 (1st edition)  
Date Published August 1995 P  
Printed in Japan  
1995  
©
2SK2513, 2SK2513-Z  
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)  
CHARACTERISTIC  
Drain to Source On-State Resistance  
Drain to Source On-State Resistance  
Gate to Source Cutoff Voltage  
Forward Transfer Admittance  
Drain Leakage Current  
SYMBOL  
RDS(on)1  
RDS(on)2  
VGS(off)  
| yfs |  
IDSS  
MIN.  
TYP.  
11  
MAX.  
15  
TEST CONDITIONS  
VGS = 10 V, ID = 23 A  
VGS = 4 V, ID = 23 A  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 23 A  
VDS = VDSS, VGS = 0  
VGS = ±20 V, VDS = 0  
VDS = 10 V  
UNIT  
mΩ  
mΩ  
16  
23  
1.0  
15  
1.5  
20  
2.0  
V
S
µA  
10  
µA  
Gate to Source Leakage Current  
Input Capacitance  
IGSS  
±10  
Ciss  
2 100  
1 100  
500  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
Output Capacitance  
Coss  
VGS = 0  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Crss  
f = 1 MHz  
td(on)  
45  
ID = 23 A  
Rise Time  
tr  
380  
VGS(on) = 10 V  
Turn-Off Delay Time  
Fall Time  
td(off)  
tf  
320  
320  
VDD = 30 V  
RG = 10 Ω  
Total Gate Charge  
QG  
100  
7
ID = 45 A  
Gate to Source Charge  
Gate to Drain Charge  
QGS  
QGD  
VF(S-D)  
trr  
VDD = 48 V  
40  
VGS = 10 V  
Body Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
1.0  
100  
180  
IF = 45 A, VGS = 0  
IF = 45 A, VGS = 0  
di/dt = 100 A/µs  
ns  
nC  
Qrr  
Test Circuit 1 Switching Time  
Test Circuit 2 Gate Charge  
D.U.T.  
D.U.T.  
IG = 2 mA  
V
GS  
RL  
RL  
90 %  
V
GS  
Wave Form  
VGS (on)  
10 %  
RG  
0
PG.  
PG.  
RG = 10 Ω  
50 Ω  
VDD  
VDD  
90 %  
ID  
90 %  
10 %  
ID  
VGS  
0
10 %  
I
D
0
Wave Form  
t
d (on)  
t
r
t
d (off)  
t
f
t
ton  
toff  
t = 1 µs  
Duty Cycle 1 %  
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.  
2
2SK2513, 2SK2513-Z  
TYPICAL CHARACTERISTICS (TA = 25 ˚C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
140  
120  
100  
80  
100  
80  
60  
60  
40  
40  
20  
20  
0
20 40 60 80 100 120 140 160  
TC - Case Temperature - ˚C  
0
20 40 60 80 100 120 140 160  
TC - Case Temperature - ˚C  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD BIAS SAFE OPERATING AREA  
1 000  
100  
Pulsed  
200  
100  
VGS = 20 V  
VGS = 10 V  
ID(pulse)  
ID(DC)  
µ
VGS = 4 V  
10  
1
TC = 25 ˚C  
Single Pulse  
2
4
0.1  
1
10  
100  
0
3
1
VDS - Drain to Source Voltage - V  
VDS - Drain to Source Voltage - V  
FORWARD TRANSFER CHARACTERISTICS  
Pulsed  
1 000  
100  
10  
TA = 125 ˚C  
75 ˚C  
25 ˚C  
–25 ˚C  
VDS = 10 V  
1
0
2
4
6
8
VGS - Gate to Source Voltage - V  
3
2SK2513, 2SK2513-Z  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1 000  
100  
10  
Rth(ch-a) = 83.3 ˚C/W  
1
Rth(ch-c) = 1.67 ˚C/W  
0.1  
0.01  
Single Pulse  
0.001  
10 µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
100  
1 000  
PW - Pulse Width - s  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
1 000  
100  
Pulsed  
VDS = 10 V  
Pulsed  
60  
TA = –25 ˚C  
25 ˚C  
ID = 23 A  
75 ˚C  
125 ˚C  
40  
10  
1
20  
0
1
10  
100  
1 000  
10  
20  
30  
ID - Drain Current - A  
VGS - Gate to Source Voltage - V  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
GATE TO SOURCE CUTOFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
80  
60  
40  
20  
0
Pulsed  
VDS = 10 V  
ID = 1 mA  
2
1
0
VGS = 4 V  
VGS = 10 V  
1
10  
100  
–50  
0
50  
100  
150  
ID - Drain Current - A  
Tch - Channel Temperature - ˚C  
4
2SK2513, 2SK2513-Z  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
Pulsed  
40  
100  
10  
1
30  
20  
VGS = 4 V  
VGS = 0 V  
VGS = 10 V  
ID = 23 A  
10  
0
0.1  
0
0
–50  
1.5  
0.5  
1.0  
100  
150  
50  
Tch - Channel Temperature - ˚C  
VSD - Source to Drain Voltage - V  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
100 000  
10 000  
1 000  
100  
VGS = 0  
f = 1 MHz  
td(off)  
tf  
tr  
Ciss  
td(on)  
Coss  
1 000  
100  
10  
VDD = 30 V  
Crss  
VGS = 10 V  
RG = 10 Ω  
1.0  
0.1  
0.1  
1
10  
100  
1.0  
10  
100  
VDS - Drain to Source Voltage - V  
ID - Drain Current - A  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
ID = 45 A  
1 000  
100  
16  
14  
12  
10  
8
80  
60  
40  
20  
di/dt = 100 A/µs  
VGS = 0  
VDS  
VGS  
VDD = 12 V  
30 V  
48 V  
6
10  
4
2
1.0  
0.1  
0
1.0  
10  
100  
0
40  
80  
120  
160  
ID - Drain Current - A  
Qg - Gate Charge - nC  
5
2SK2513, 2SK2513-Z  
REFERENCE  
Document Name  
Document No.  
TEI-1202  
IEI-1209  
NEC semiconductor device reliability/quality control system.  
Quality grade on NEC semiconductor devices.  
Semiconductor device mounting technology manual.  
Semiconductor device package manual.  
IEI-1207  
IEI-1213  
Guide to quality assurance for semiconductor devices.  
Semiconductor selection guide.  
MEI-1202  
MF-1134  
TEA-1034  
TEA-1035  
TEA-1037  
Power MOS FET features and application switching power supply.  
Application circuits using Power MOS FET.  
Safe operating area of Power MOS FET.  
6
2SK2513, 2SK2513-Z  
[MEMO]  
7
2SK2513, 2SK2513-Z  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on  
a customer designated “quality assurance program“ for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact NEC Sales Representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 94.11  
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