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IXTQ76N25T

型号：

IXTQ76N25T

描述：

初步的技术资料沟槽栅功率MOSFET N沟道增强模式[ Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

213 K

下载PDF手册
Preliminary Technical Information  
IXTA76N25T IXTH76N25T  
IXTI76N25T IXTP76N25T  
IXTQ76N25T  
VDSS = 250V  
ID25 = 76A  
RDS(on) ≤ 39mΩ  
Trench Gate  
Power MOSFET  
N-Channel Enhancement Mode  
Typical avalanche BV = 300V  
TO-263 (IXTA)  
TO-247 (IXTH)  
TO-262 (IXTI)  
TO-220 (IXTP)  
G
S
G
D
S
G
G
D
(TAB)  
D
(TAB)  
(TAB)  
(TAB)  
S
S
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
250  
250  
V
V
TO-3P (IXTQ)  
VGSM  
Transient  
± 30  
V
ID25  
IDM  
TC = 25°C*  
76  
170  
A
A
TC = 25°C, pulse width limited by TJM  
G
IAS  
EAS  
TC = 25°C  
TC = 25°C  
8
1.5  
A
J
D
S
(TAB)  
PD  
TC = 25°C  
460  
W
G = Gate  
D = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
S = Source  
TAB = Drain  
Features  
TL  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10seconds  
300  
260  
°C  
°C  
z International standard packages  
z Avalanche rated  
z Low package inductance  
- easy to drive and to protect  
Md  
FC  
Mounting Torque TO-220,TO-3P,TO247  
Mounting Force TO-262,TO-263  
1.13 / 10  
10..65 / 2.2..14.6  
Nm/lb.in.  
N/lb.  
Weight  
TO-262,TO-263  
TO-220  
TO-3P  
2.5  
3.0  
5.5  
6.0  
g
g
g
g
Advantages  
TO-247  
z
Easy to mount  
Space savings  
High power density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ . Max.  
Applications  
(TJ = 25°C unless otherwise specified)  
z DC-DC converters  
z Battery chargers  
BVDSS  
VGS = 0V, ID = 1mA  
VGS = 0V, ID = 10A  
250  
300  
V
V
z Switched-mode and resonant-mode  
power supplies  
VGS(th)  
IGSS  
VDS = VGS, ID = 1mA  
3
5
z DC choppers  
z AC motor control  
z Uninterruptible power supplies  
z High speed power switching  
applications  
VGS = ± 20V, VDS = 0V  
± 100 nA  
μA  
IDSS  
VDS = VDSS  
VGS = 0V  
2
TJ = 125°C  
200 μA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
39 mΩ  
DS99663C(10/07)  
© 2007 IXYS CORPORATION, All rights reserved  
IXTA76N25T IXTH76N25T  
IXTI76N25T IXTP76N25T IXTQ76N25T  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
43  
72  
S
Ciss  
Coss  
Crss  
4500  
480  
46  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
22  
25  
56  
29  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 3.3Ω (External)  
Qg(on)  
Qgs  
92  
28  
21  
nC  
nC  
nC  
VGS= 10V, VDS = 0.5 • VDSS , ID = 25A  
Qgd  
RthJC  
RthCH  
0.27 °C /W  
°C W  
TO-220  
0.50  
0.21  
TO-3P, TO-247  
°C W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
76  
200  
1.5  
A
A
V
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
trr  
148  
21  
ns  
A
IF = 38A, -di/dt = 250A/μs  
VR = 100V, VGS = 0V  
IRM  
QRM  
1.6  
μC  
Notes: 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
*: Current may be limited by external lead limit.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA76N25T IXTH76N25T  
IXTI76N25T IXTP76N25T IXTQ76N25T  
TO-263 (IXTA) Outline  
TO-220 (IXTP) Outline  
Pins: 1 - Gate  
2 - Drain  
TO-247 (IXTH) Outline  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
∅ P  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
1
2
3
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
TO-3P (IXTQ) Outline  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
e
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
Leaded 262 (IXTI) Outline  
© 2007 IXYS CORPORATION, All rights reserved  
IXTA76N25T IXTH76N25T  
IXTI76N25T IXTP76N25T IXTQ76N25T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
180  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
8V  
VGS = 10V  
8V  
160  
140  
120  
100  
80  
7V  
6V  
7V  
6V  
60  
40  
20  
5V  
5V  
8
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
0
2
4
6
10  
12  
14  
16  
18  
20  
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. RDS(on) Normalized to ID = 38A Value  
vs. Junction Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 10V  
7V  
VGS = 10V  
6V  
I D = 76A  
I D = 38A  
5V  
0
1
2
3
4
5
6
7
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 38A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.6  
3.4  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
TC - Degrees Centigrade  
ID - Amperes  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTA76N25T IXTH76N25T  
IXTI76N25T IXTP76N25T IXTQ76N25T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
120  
140  
120  
100  
80  
110  
TJ = - 40ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
25ºC  
125ºC  
60  
TJ = 125ºC  
25ºC  
- 40ºC  
40  
20  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
100  
10  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
200  
180  
160  
140  
120  
100  
80  
VDS = 125V  
I
I
D = 25A  
G = 10mA  
TJ = 125ºC  
TJ = 25ºC  
60  
40  
20  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
f = 1 MHz  
C
iss  
C
oss  
C
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
VDS - Volts  
Pulse Width - Seconds  
© 2007 IXYS CORPORATION, All rights reserved  
IXTA76N25T IXTH76N25T  
IXTI76N25T IXTP76N25T IXTQ76N25T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
34  
32  
34  
32  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
RG = 3.3  
Ω
TJ = 25ºC  
30  
VGS = 15V  
28  
26  
24  
22  
VDS = 125V  
I D = 76A  
RG = 3.3  
Ω
20  
18  
16  
14  
12  
10  
8
V
GS = 15V  
DS = 125V  
I D = 38A  
V
TJ = 125ºC  
15 20 25 30 35 40 45 50 55 60 65 70 75 80  
ID - Amperes  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
T J - Degrees Centigrade  
I D =  
38A  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
30  
25  
24  
23  
22  
21  
20  
30  
65  
- - - -  
td(on)  
TJ = 125ºC, VGS = 15V  
tr  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
I D = 38A  
28  
26  
24  
22  
20  
18  
16  
62  
VDS = 125V  
59  
56  
I D = 38A  
53  
I D = 76A  
50  
I D = 76A  
- - - -  
td(off)  
RG = 3.3 , VGS = 15V  
tf  
Ω
47  
V
DS = 125V  
44  
3
4
5
6
7
8
9
10 11 12 13 14 15  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
70  
67  
64  
61  
58  
55  
52  
49  
46  
43  
80  
70  
60  
50  
40  
30  
20  
10  
190  
170  
150  
130  
110  
90  
TJ = 25ºC  
- - - -  
td(off)  
TJ = 125ºC, VGS = 15V  
tf  
VDS = 125V  
TJ = 125ºC  
TJ = 25ºC  
- - - -  
td(off)  
RG = 3.3 , VGS = 15V  
tf  
I D = 38A, 76A  
Ω
VDS = 125V  
TJ = 125ºC  
70  
50  
3
4
5
6
7
8
9
10 11 12 13 14 15  
15 20 25 30 35 40 45 50 55 60 65 70 75 80  
ID - Amperes  
RG - Ohms  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_76N25T(6E)06-28-06  
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