2SK2174 L , 2SK2174 S
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit Test conditions
———————————————————————————————————————————
Drain to source breakdown
V
500
—
—
V
I
= 10 mA, V
= 0
(BR)DSS
D
GS
voltage
———————————————————————————————————————————
Gate to source breakdown
V
±30
—
—
V
I
= ±100 µA, V
= 0
(BR)GSS
G
DS
voltage
———————————————————————————————————————————
Gate to source leak current
I
—
—
±10
µA
V
= ±25 V, V
= 0
GSS
GS
DS
———————————————————————————————————————————
Zero gate voltage drain current
I
—
—
250
µA
V
= 400 V, V
= 0
DSS
DS
GS
———————————————————————————————————————————
Gate to source cutoff voltage
———————————————————————————————————————————
V
2.0
—
3.0
V
I
= 1 mA, V
= 10 V
GS(off)
D
DS
Static drain to source on state
R
—
0.22
0.27
Ω
I = 10 A
DS(on)
D
resistance
V
= 10 V *
GS
———————————————————————————————————————————
Forward transfer admittance
|y |
10
16
—
S
I = 10 A
fs
D
V
= 10 V *
DS
———————————————————————————————————————————
Input capacitance
Ciss
—
2800
—
pF
V
= 10 V
DS
————————————————————————————————
Output capacitance
Coss
—
780
—
pF
V
= 0
GS
————————————————————————————————
Reverse transfer capacitance
Crss
—
90
—
pF
f = 1 MHz
———————————————————————————————————————————
Turn–on delay time
t
—
32
—
ns
I = 10 A
d(on)
D
————————————————————————————————
Rise time
t
—
115
—
ns
V
= 10 V
r
GS
————————————————————————————————
Turn–off delay time
t
—
200
—
ns
R = 3 Ω
L
d(off)
————————————————————————————————
Fall time
t
—
90
—
ns
f
———————————————————————————————————————————
Body–drain diode forward
V
—
1.0
—
V
I = 20 A, V
= 0
DF
F
GS
voltage
———————————————————————————————————————————
Body–drain diode reverse
recovery time
t
—
500
—
µs
I
= 20 A, V
= 0,
rr
GS
F
diF / dt = 100 A / µs
———————————————————————————————————————————
* Pulse Test
■ See characteristic curves of 2SK1170.
