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IXTP60N10T

型号：

IXTP60N10T

描述：

N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

178 K

下载PDF手册
TrenchMVTM  
Power MOSFET  
IXTA60N10T  
IXTP60N10T  
VDSS = 100V  
ID25 = 60A  
RDS(on) ≤ 18mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
G
S
Symbol  
Test Conditions  
Maximum Ratings  
(TAB)  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
100  
100  
V
V
TO-220 (IXTP)  
VGSM  
Transient  
± 30  
V
ID25  
IDM  
TC = 25°C  
60  
180  
A
A
TC = 25°C, pulse width limited by TJM  
G
D
IA  
EAS  
TC = 25°C  
TC = 25°C  
10  
A
S
(TAB)  
500  
mJ  
PD  
TC = 25°C  
176  
W
G = Gate  
D
= Drain  
S = Source  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
TL  
TSOLD  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Features  
z International standard packages  
z 175°C Operating Temperature  
z Avalanche Rated  
Md  
Mounting torque (TO-220)  
1.13/10  
Nm/lb.in  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
z
Low RDS(on)  
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
z
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
z
DC/DC Converters and Off-line UPS  
Primary Switch for 24V and 48V  
Systems  
High Current Switching Applications  
Distributed Power Architechtures  
and VRMs  
Electronic Valve Train Systems  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 50μA  
VGS = ± 20V, VDS = 0V  
100  
2.5  
V
V
4.5  
z
z
± 100 nA  
μA  
IDSS  
VDS = VDSS  
VGS = 0V  
1
z
TJ = 150°C  
100 μA  
z
High Voltage Synchronous Recifier  
RDS(on)  
VGS = 10V, ID = 25A, Notes 1, 2  
14.8  
18 mΩ  
DS99647B(08/08)  
© 2007 IXYS CORPORATION, All rights reserved  
IXTA60N10T  
IXTP60N10T  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 (IXTA) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
42  
Max.  
gfs  
VDS= 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
25  
S
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
Ciss  
Coss  
Crss  
td(on)  
tr  
2650  
335  
60  
27  
Resistive Switching Times  
40  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 10A  
td(off)  
tf  
43  
RG = 15Ω (External)  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
37  
Qg(on)  
Qgs  
Qgd  
RthJC  
RthCH  
49  
Dim.  
Millimeter  
Inches  
VGS= 10V, VDS = 0.5 • VDSS, ID = 10A  
15  
Min.  
Max.  
Min. Max.  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
11  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
0.85 °C/W  
°C/W  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
TO-220  
0.50  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100 BSC  
.405  
.320  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
L1  
L2  
L3  
L4  
IS  
VGS = 0V  
60  
A
A
ISM  
VSD  
trr  
Repetitive, pulse width limited by TJM  
IF = 25A, VGS = 0V, Note 1  
240  
1.2  
R
0.46  
0.74  
.018  
.029  
V
TO-220 (IXTP) Outline  
59  
3.8  
ns  
A
IF = 0.5 • IS, VGS = 0V  
-di/dt = 100A/μs  
VR = 0.5 • VDSS  
IRM  
QRM  
112  
nC  
Notes: 1. Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.  
Pins: 1 - Gate  
2 - Drain  
2. On through-hole packages, RDS(on) Kelvin test contact location must be  
3 - Source 4, TAB - Drain  
5mm or less from the package body.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA60N10T  
IXTP60N10T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
200  
180  
160  
140  
120  
100  
80  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
VGS = 10V  
9V  
8V  
9V  
7V  
6V  
8V  
7V  
6V  
60  
40  
20  
0
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2  
VDS - Volts  
0
2
4
6
8
10 12 14 16 18 20 22 24 26  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 30A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 10V  
VGS = 10V  
9V  
8V  
7V  
I D = 60A  
I D = 30A  
6V  
5V  
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4  
VDS - Volts  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 30A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
15V - - - -  
TJ = 175ºC  
TJ = 25ºC  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
15  
30  
45  
60  
75  
90  
105 120 135 150  
ID - Amperes  
TC - Degrees Centigrade  
© 2007 IXYS CORPORATION, All rights reserved  
IXTA60N10T  
IXTP60N10T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
70  
60  
50  
40  
30  
20  
10  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
150ºC  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
4.0  
0.4  
0
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
1.4  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
180  
160  
140  
120  
100  
80  
VDS = 50V  
I
I
D = 10A  
G = 10mA  
TJ = 150ºC  
60  
TJ = 25ºC  
40  
20  
0
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
= 1 MHz  
f
C
iss  
C
oss  
C
rss  
10  
5
10  
15  
20  
25  
30  
35  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
Pulse Width - Seconds  
IXYS REF: T_60N10T(2V)8-07-08-A  
IXTA60N10T  
IXTP60N10T  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time  
vs. Drain Current  
60  
55  
50  
45  
40  
35  
30  
25  
60  
55  
50  
45  
40  
35  
30  
25  
RG = 15Ω  
VGS = 10V  
VDS = 50V  
RG = 15Ω  
VGS = 10V  
VDS = 50V  
TJ = 25ºC  
I D = 30A  
TJ = 125ºC  
I D = 10A  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
170  
150  
130  
110  
90  
80  
70  
60  
50  
40  
30  
20  
10  
39  
64  
60  
56  
52  
48  
44  
40  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGS = 10V  
38  
37  
36  
35  
34  
33  
I D = 10A  
VDS = 50V  
t f  
t
d(off) - - - -  
I D = 30A  
RG = 15Ω, VGS = 10V  
VDS = 50V  
10A < I D < 30A  
I D = 30A  
I D = 10A  
70  
50  
30  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
15  
20  
25  
30  
35  
40  
45  
50  
55  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times  
vs. Drain Current  
120  
110  
100  
90  
185  
170  
155  
140  
125  
110  
95  
40  
39  
38  
37  
36  
35  
34  
33  
32  
67  
63  
59  
55  
51  
47  
43  
39  
35  
t f  
t
I D = 10A, 30A  
d(off) - - - -  
t f  
t
d(off) - - - -  
RG = 15Ω, VGS = 10V  
TJ = 125ºC, VGS = 10V  
VDS = 50V  
VDS = 50V  
TJ = 125ºC  
80  
70  
60  
50  
80  
TJ = 25ºC  
40  
65  
30  
50  
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
15  
20  
25  
30  
35  
40  
45  
50  
55  
ID - Amperes  
RG - Ohms  
© 2007 IXYS CORPORATION, All rights reserved  
IXYS REF: T_60N10T(2V)8-07-08-A  
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