找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

2SK932-24-TB-E

型号:

2SK932-24-TB-E

描述:

高频低噪声功率放大器呃应用[ High-Frequency Low-Noise Amplifi er Applications ]

品牌:

SANYO[ SANYO SEMICON DEVICE ]

页数:

6 页

PDF大小:

335 K

Ordering number : EN2841A  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Junction Silicon FET  
High-Frequency Low-Noise  
Amplier Applications  
2SK932  
Applications  
AM tuner RF amplier, low-noise amplier  
Features  
Adoption of FBET process  
Large yfs  
Small Ciss  
|
|
Ultralow noise gure  
Ultrasmall-sized package permitting 2SK932-applied sets to be made smaller and slimmer  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Drain Voltage  
Gate Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
15  
--15  
10  
DSX  
V
V
GDS  
I
mA  
mA  
mW  
°C  
G
Drain Current  
I
50  
D
Allowable Power Dissipation  
Junction Temperature  
Storage Temperature  
P
200  
150  
D
Tj  
Tstg  
--55 to +150  
°C  
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
• Package  
: CP  
7013A-011  
• JEITA, JEDEC  
: SC-59, TO-236, SOT-23, TO-236AB  
Minimum Packing Quantity : 3,000 pcs./reel  
2.9  
0.1  
2SK932-22-TB-E  
2SK932-23-TB-E  
2SK932-24-TB-E  
3
Packing Type: TB  
Marking  
E
TB  
1
2
0.95  
0.4  
1 : Source  
2 : Drain  
3 : Gate  
Electrical Connection  
3
SANYO : CP  
1
2
http://www.sanyosemi.com/en/network/  
80812 TKIM/51099TH (KT)/N148MO, TS  
No.2841-1/6  
2SK932  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
=--10 A, V =0V  
Unit  
min  
--15  
max  
Gate-to-Drain Breakdown Voltage  
Gate-to-Source Leakage Current  
Zero-Gate Voltage Drain Current  
Cutoff Voltage  
V
I
V
nA  
mA  
V
μ
(BR)GDS  
G
DS  
I
V
=--10V, V =0V  
--1.0  
GSS  
GS  
DS  
=-5V, V =0V  
I
V
5.0*  
--0.2  
25  
24.0*  
--1.4  
DSS  
DS  
GS  
=5V, I =100  
V
(off)  
V
A
--0.6  
50  
μ
GS  
yfs  
DS  
D
Forward Transfer Admittance  
Input Capacitance  
V
=5V, V =0V, f=1kHz  
GS  
mS  
pF  
pF  
dB  
|
|
DS  
Ciss  
Crss  
NF  
10  
V
=5V, V =0V, f=1MHz  
GS  
DS  
Reverse Transfer Capacitance  
Noise Figure  
3.0  
1.5  
V
=5V, R =1k , I =1mA, f=1kHz  
Ω
DS  
g
D
: The 2SK932 is classied by I  
as follows : (unit : mA)  
22  
*
DSS  
Rank  
21  
23  
24  
I
5.0 to 8.5  
7.3 to 12.0  
10.0 to 17.0  
14.5 to 24.0  
DSS  
Ordering Information  
Device  
2SK932-22-TB-E  
2SK932-23-TB-E  
2SK932-24-TB-E  
Package  
Shipping  
memo  
CP  
CP  
CP  
3,000pcs./reel  
3,000pcs./reel  
3,000pcs./reel  
Pb Free  
I
D
-- V  
I
-- V  
DS  
D DS  
16  
14  
12  
10  
20  
16  
12  
8
8
6
4
--0.3V  
--0.4V  
--0.3V  
--0.4V  
4
2
0
--0.6V --0.5V  
--0.6V --0.5V  
0
0
0
0.4  
0.8  
1.2  
1.6  
2.0  
2
4
6
8
10  
Drain-to-Source Voltage, V  
DS  
-- V  
Drain-to-Source Voltage, V  
-- V  
ITR00898  
ITR00899  
DS  
I
-- V  
V
(off) -- I  
D
GS  
GS  
DSS  
2
40  
V
=5V  
V
=5V  
DS  
DS  
I =100MA  
D
--1.0  
30  
20  
10  
0
7
5
3
2
--0.1  
3
--1.2  
--1.0  
--0.8  
--0.6  
--0.4  
--0.2  
0
5
7
2
3
5
10  
Gate-to-Source Voltage, V  
GS  
-- V  
Saturation Drain Current, I -- mA  
ITR00901  
DSS  
ITR00900  
No.2841-2/6  
2SK932  
\ yfs \ -- I  
\ yfs \ -- I  
D
DSS  
100  
100  
V
V
=5V  
=0  
V
=5V  
DS  
GS  
DS  
7
f=1kHz  
7
f=1kHz  
5
5
3
2
3
2
10  
7
5
3
1.0  
10  
2
3
5
7
2
3
5
3
5
7
2
3
5
10  
10  
Drain Current, I -- mA  
Saturation Drain Current, I  
-- mA  
ITR00903  
DSS  
ITR00902  
D
Ciss -- V  
DS  
Crss -- V  
DS  
10  
3
2
V
=0  
V
=0  
GS  
GS  
f=1MHz  
f=1MHz  
7
5
10  
3
2
7
5
3
2
1.0  
7
5
1.0  
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
1.0  
10  
10  
-- V  
1.0Drain-to-Source Voltage, V  
Drain-to-Source Voltage, V  
-- V  
ITR00904  
ITR00905  
DS  
DS  
NF -- f  
NF -- f  
14  
12  
14  
12  
10  
8
V
=5V  
V
=5V  
DS  
DS  
I =10mA  
Rg=1k7  
D
10  
8
6
6
4
4
2
2
0
10  
0
10  
2
5
2
5
2
5
2
5
2
5
2
5
2
5
2
5
2
5
2
5
100  
1k  
10k  
100k  
1M  
ITR00906  
100  
1k  
10k  
100k  
1M  
ITR00907  
Frequency, f -- Hz  
Frequency, f -- Hz  
P
-- Ta  
D
240  
200  
160  
120  
80  
40  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta -- oC  
ITR00908  
No.2841-3/6  
2SK932  
Embossed Taping Specication  
2SK932-22-TB-E, 2SK932-23-TB-E, 2SK932-24-TB-E  
No.2841-4/6  
2SK932  
Outline Drawing  
2SK932-22-TB-E, 2SK932-23-TB-E, 2SK932-24-TB-E  
Land Pattern Example  
Mass (g) Unit  
0.013  
Unit: mm  
mm  
* For reference  
0.8  
0.95  
0.95  
No.2841-5/6  
2SK932  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment. The products mentioned herein  
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,  
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal  
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten  
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they  
grant any guarantee thereof. If you should intend to use our products for new introduction or other application  
different from current conditions on the usage of automotive device, communication device, office equipment,  
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)  
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be  
solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are  
not guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an  
independent device, the customer should always evaluate and test devices mounted in the customer's  
products or equipment.  
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using  
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating  
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
Co.,Ltd. products described or contained herein.  
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,  
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute  
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a  
confirmation.  
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all  
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures  
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give  
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,  
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but  
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and  
structural design.  
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are  
controlled under any of applicable local export control laws and regulations, such products may require the  
export license from the authorities concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system, or  
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the  
SANYO Semiconductor Co.,Ltd. product that you intend to use.  
Upon using the technical information or products described herein, neither warranty nor license shall be  
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any  
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third  
party's intellectual property rights which has resulted from the use of the technical information and products  
mentioned above.  
This catalog provides information as of August, 2012. Specications and information herein are subject  
to change without notice.  
PS No.2841-6/6  
厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.264232s